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    FDPF085N10A Price and Stock

    onsemi FDPF085N10A

    MOSFET N-CH 100V 40A TO220F
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    Fairchild Semiconductor Corporation FDPF085N10A

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    FDPF085N10A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDPF085N10A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A TO-220F Original PDF

    FDPF085N10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDPF085N10A FDPF085N10A PDF

    fdpf085n10a

    Abstract: No abstract text available
    Text: FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 mΩ Features General Description • RDS on = 6.5 mΩ ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    FDPF085N10A FDPF085N10A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 mΩ Features Description • RDS on = 6.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original
    FDPF085N10A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDPF085N10A PDF