FHX04X
Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04X
FHX04
FHX05X
GaAs FET HEMT Chips
hemt low noise die
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FHX04
Abstract: FHX04X FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04
FHX04X
FHX05X
GaAs FET HEMT Chips
hemt low noise die
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FHX04
Abstract: FHX04X FHX05X FHX06X hemt low noise die
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04
FHX04X
FHX05X
hemt low noise die
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hemt low noise die
Abstract: No abstract text available
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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Original
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PDF
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
12GHz
FHX06X
2-18GHz
hemt low noise die
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Untitled
Abstract: No abstract text available
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
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FHX04X
Abstract: fujitsu hemt GaAs FET HEMT Chips hemt low noise die FHX04 FHX05X FHX06X FET transistors with s-parameters FUJITSU AU GM 90 562 573
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04X
fujitsu hemt
GaAs FET HEMT Chips
hemt low noise die
FHX04
FHX05X
FET transistors with s-parameters
FUJITSU AU
GM 90 562 573
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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Untitled
Abstract: No abstract text available
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low N o ise F igure: 0.7 5 d B T y p . @ f= 1 2 G H z (F H X 04) H igh A s s o c ia te d G ain: 1 0.5d B (T yp .)@ f= 1 2 G H z Lg s 0.25|iim , W g = 200|iim G old G a te M e ta lliz a tio n fo r H igh R e lia b ility
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FHX04X,
FHX05X,
FHX06X
FCSI0598M200
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GaAs FET HEMT Chips
Abstract: S2V 15
Text: F H X 0 4 X , FHX05X, FHX06X GaAs FET & HEMT Chins ELECTRICAL CHARACTERISE CS Amb ient Temperature Ta=25°C Item Test Conditions Symbol Transconductance 9m VDS = 2V, Id s = 10mA 15 35 Pinch-off Voltage vp vd s = 2V, ids = 1mA -0.2 Saturated Drain Current
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FHX05X,
FHX06X
FHX06X
FHX05X
FHX04X
12GHz
GaAs FET HEMT Chips
S2V 15
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FHX34X
Abstract: FHX13x
Text: MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics Ta = 25 C NF TYP. (dB) Gas TYP. (dB) f (GHz) Vd s m (mA) FHX04X 0.75 10.5 12 2 10 FHXQ5X 0.9 10.5 12 2 10 FHX06X 1.1 10.5 12 2 10 FHX13X 0.45 13.0 12 2 10 FHX14X 0.55 13.0 12 2 10
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FHX04X
FHX06X
FHX13X
FHX14X
FHX34X
FHX35X
FHX45X
FHR02X
FHR20X
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FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FHX04X
FHX05X
FHX06X
FHX13X
FHX14X
FHX35X
FHX45X
FHR02X
FHR20X
FSX017X
FLC301XP
Flr016xp
fsx51x
FLC151XP
FLC151
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FLC081XP
Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A
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FHX05X
FHX06FA/LG
FHX06X
FHX15FAAG
FHX35LG
27dBin
FLC253MH-8
FLC301MG-8
FLC311MG-4
FLK012WF
FLC081XP
FLC253MH-6
FLC091WF
FLC053WG
FLC103WG
FLK022WG
FLK012WF
FLK052WG
FHX15FA
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