FLC107WG Search Results

FLC107WG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLC107WG		Fujitsu	C-Band Power GaAs FET		Original	PDF

FLC107WG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
fujitsu gaas fet Abstract: FLC107WG Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general	Original	PDF	FLC107WG FLC107WG FCSI0598M200 fujitsu gaas fet
Untitled Abstract: No abstract text available Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general	Original	PDF	FLC107WG FLC107WG
fujitsu gaas fet Abstract: FLC107WG Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general	Original	PDF	FLC107WG FLC107WG FCSI0598M200 fujitsu gaas fet
Untitled Abstract: No abstract text available Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: hadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general	Original	PDF	FLC107WG FLC107WG FCSI0598M200
FLC107WG Abstract: No abstract text available Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general	Original	PDF	FLC107WG FLC107WG Te4888
C-Band Power GaAs FET Abstract: FLC107WG Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general	Original	PDF	FLC107WG FLC107WG Temp71 C-Band Power GaAs FET
flc107 Abstract: No abstract text available Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general	Original	PDF	FLC107WG FLC107WG flc107
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	PDF	FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME
fujitsu gaas fet Abstract: FLC107WG Text: FLC107WG - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-\|<jB = 30.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package	OCR Scan	PDF	FLC107WG FLC107WG FCSI0598M200 fujitsu gaas fet