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    IRF644

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF G0172flfl IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 IRF644 IRFP244 IRF645 IRFP245 IRF644