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    G1961 Price and Stock

    INDUSTRIALSUPPLIES.COM GG-19615

    CORD 16 AWG 15' WHITE
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    DigiKey GG-19615 Box
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    Zilog Inc Z0220516PSG1961

    IC MODEM CTRL 86E34 28-DIP
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    DigiKey Z0220516PSG1961 Tube 3,495
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    Mouser Electronics Z0220516PSG1961
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    Zilog Inc Z0220516SSG1961

    IC MODEM CTRL 86E34 28-SOIC
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    DigiKey Z0220516SSG1961 Tube 6,669
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    Vishay Beyschlag UMA02040G1961BAU00

    UMA 0204-05 0.1% AU 1K96
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    DigiKey UMA02040G1961BAU00 Box 100
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    Vishay Intertechnologies UXB02070G1961BCU00

    Resistor Ultra Precision Metal Film 1.96k Ohm 0.1% 1/4W ?5ppm/?C Conformal PC Pin T/R - Ammo Pack (Alt: UXB02070G1961BCU00)
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    Avnet Americas UXB02070G1961BCU00 Ammo Pack 8 Weeks 100
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    Mouser Electronics UXB02070G1961BCU00
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    G1961 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G1961 Hamamatsu Photonics GaP photodiode Original PDF
    G1961M EPCOS IF Filter for Intercarrier Applications Original PDF

    G1961 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G1962

    Abstract: uv photodiode, GaP GaP photodiode
    Text: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material /Q* /Q /Q G1961 G1962 G1963 Package


    Original     		G1961 G1962 G1963 KGPD1007E02 uv photodiode, GaP GaP photodiode PDF

    Untitled

    Abstract: No abstract text available
    Text: GaPフォトダイオード G1961 G1962 G1963 ショットキ型 特長 用途 低暗電流 分析機器 高紫外感度 紫外線検出 構成／絶対最大定格 型名 G1961 G1962 G1963 外形 寸法図/ 窓材 ①/Q* ②/Q ③/Q パッケージ 受光面


    Original     		G1961 G1962 G1963 KGPDB0008JB KGPDB0018JA PDF

    GaP photodiode

    Abstract: G1962 uv photodiode, GaP G1961 G1963 ACTIVE LOAD PHOTODIODE
    Text: PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection • General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/


    Original     		G1961, G1962, G1963 G1961 G1962 SE-171 KGPD1007E01 GaP photodiode G1962 uv photodiode, GaP G1961 G1963 ACTIVE LOAD PHOTODIODE PDF

    GaP photodiode

    Abstract: uv photodiode, GaP G1962 G1961 G1963
    Text: PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection • General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/


    Original     		G1961, G1962, G1963 G1961 G1962 SE-171 KGPD1007E01 GaP photodiode uv photodiode, GaP G1962 G1961 G1963 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. G1961 G1962 G1963 Dimensional outline/ Window material /Q* /Q /Q Package


    Original     		G1961 G1962 G1963 KGPD1007E02 PDF

    G1961

    Abstract: 075ID G1962 G1963
    Text: PHOTODIODE GaPフォトダイオード G1961, G1962, G1963 ショットキ型 特長 用途 l 低暗電流 l 高紫外感度 l 分析機器 l 紫外線検出 • 一般定格／絶対最大定格 型名 G1961 G1962 G1963 外形 寸法図/ 窓材 ➀/Q * ➁/Q


    Original     		G1961, G1962, G1963 G1961 G1962 KGPDA0005JA G1961 075ID G1962 G1963 PDF

    G1966M SAW FILTER

    Abstract: 8 PIN SMD IC 314-150 k3264 K2977M L9453M ofw g 3254 b684 saw filter k6272k K9260M SIEMENS saw filter 44 MHz M3951M
    Text: Siemens Matsushita Components One Port Resonators Center Frequency MHz 239,75 297,80 303,83 304,25 304,30 308,50 314,50 315,00 315,00 315,00 345,00 390,00 392,85 403,05 403,55 407,25 417,50 418,00 423,17 Type Frequency Frequency Insertion Tolerance Tolerance Attenuation


    Original     		PDF

    L9453M

    Abstract: K9253M K2958M K2977M k9260m G1966M SAW FILTER K3255K K9456M G1966M G1984M
    Text: Siemens Matsushita Components IF Filters for Intercarrier Applications Picture Carrier MHz Type PC - SC Distance MHz 36.88 38.00 B1952M K2953M K2958M K2959M K2963M K2965M K2972M K2973M K6264K K6264K K6265K K6265K K6268K K6277K K6277K K6284K M1973D G1872M G1875M


    Original     		B1952M K2953M K2958M K2959M K2963M K2965M K2972M K2973M K6264K L9453M K9253M K2958M K2977M k9260m G1966M SAW FILTER K3255K K9456M G1966M G1984M PDF

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


    OCR Scan     		0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA PDF

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


    OCR Scan     		S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118 PDF

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaP Photodiodes Type No. Dimensional Outline P.44,45 / W indow Material Package Active Area Size Effective Active Area (mm) (mm2) 1.1X 1.1 1.0 Spectral Peak Response Sensitivity Range Wavelength A Ap (nm) (nm) Photo Sensitivity S Typ. (A/W) Short Circuit Current


    OCR Scan     		G1961 KGPDB0014EA KGPDB0015EA KGPDB0018EA KGPDB0006EA PDF

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


    OCR Scan     		S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaP Photodiodes Type No. Dimensional Outline P.38,39 / Window Material * Package Effective Active Area Active Size Area (mm) (mm2) 1.1X1.1 1.0 Spectral Peak Response Sensitivity Range Wavelength À (nm) (nm) Photo Sensitivity S Typ. (A/W) Short Circuit Current


    OCR Scan     		254nm 400nm G1961 G1961 015EA pOB0008 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaP Photodiodes j Dimensional ! Outline Type No. Active ; P.46. 47 / : Package i Window I Material ' 1 Area Size (mm) Spectral Peak Response i Sensitivity j i Active I Range ¡Wavelength! ¡ Area : !Effective X (mm2) \kp (nm) Short Circuit Current Isc Photo Sensitivity S


    OCR Scan     		G1961 G1963 KGPDB0C14EA KGPDB0015EA KGPDB0016EA 1Q-16 KGPOB0018EA KGPDB0006EA PDF

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


    OCR Scan     		0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407 PDF

    S3884

    Abstract: G1116
    Text: GaAsP Photodiodes Soecfrai Response Hange Ü Typ« No U nle ss o tn e rw ise noted, Typ T a - 2. Package Peak SensÜMy W »wíe«#ti Ä# Phcflp Sanwfcvtfy 5 k&Q (am (AAV) ’ »imi {mm} ShW! CînXHt Current tec 100 h V»*10 mV 2456 * Mg? Xsâp • fiarfc


    OCR Scan     		31-V0I5' G1115 G1116 G1120 G3067 G2711-01 G1735 G1736 Gf737 G1738 S3884 PDF

    Untitled

    Abstract: No abstract text available
    Text: Index by Type No. T yp e No Nam e Page S 1 0 8 7 . . Si P h o to d io d e V isible / V is ib le to IR R ange, T ype No S 1 3 3 6 -5 B K . Si P h o to d io d e (U V to IR R ange, fo r P re cisio n P h o to m e tr y . 14, 15


    OCR Scan     		S6036-01 PDF

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


    OCR Scan     		G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01 PDF

    G1961-01

    Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
    Text: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)


    OCR Scan     		Q002S3ti 254nm 400nm G1961 G1962 G1963 G1961-01 G1962-01 S1087, S1087-03 S1190 hamamatsu S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ PDF

    g1962-01

    Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
    Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt


    OCR Scan     		100lux 2856K 1Q-90% G1117 G1120 G2711 G1735 G1736 G1737 G1738 g1962-01 u1116 G1126-02 hamamatsu PIN TO5 3x1015 PDF

    S2840

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.


    OCR Scan     		0003b5G S2829 S4404-01 S2041 S2042 KSPDA0061EA KSPDA0062EA D003t G2711-01 S2833-04, S2840 PDF

    Untitled

    Abstract: No abstract text available
    Text: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc


    OCR Scan     		0G03b S1223 660nm 780nm 830nm S1223-01 S3071 S1863-01 14mmTO-8 S3883 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000


    OCR Scan     		00031a S1406-03 S1406-04 S1406-05 S1406-06 S5590 S5591 S3887 G1957 S1446, PDF