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    MGFC1403

    Abstract: FET Spec sheet s3v1 fet 3004
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> GFC1403 FOR MICROWAVE LOW-NOISE AMPLIFIERS, N-CHANNEL SCHOTTKY BARRIER GATE TYPE D ESC R IPTIO N OUTLINE DRAWING The M GFC1403 low-noise GaAs FET w ith an N -channel Schottky gate is designed for use in S to Ku band am pli­


    OCR Scan     		PDF MGFC1403 MGFC1403 12GHz FET Spec sheet s3v1 fet 3004

    MGF1403

    Abstract: 3B14-03 b1403 MGFC1403 I-3-40 MGF1903 1303B
    Text: Die_ GFC1403 Package MGF1303B A m itsu b ish i MGF1903B ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES Devices in this family are constructed using the GFC1403 die. These devices are N-channel Schottky gate type and are suitable for use in amplifier and oscillator applications.


    OCR Scan     		PDF MGFC1403 MGF1303B/1403/1903B MGF1903B MGF1303B MGF1903B MGF1403 3B14-03 b1403 I-3-40 MGF1903 1303B