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    2N4400

    Abstract: No abstract text available
    Text: 45E D • T Ü C1 7 E S G GG177bl TÔS4 1 TOSHIBA TRANSISTOR 2N4400 SILICON NPN EPITAXIAL T Y P E PCT PROCESS -? TO SHI BA (D IS C R E T E / O P T O ) r> FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV= 100nA(M a x -) , I]jEV=-100nA(Max. )


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    17ESG GG177bl 2N4400 100nA -100nA 150mA, 2N4402 100MHz 2N4400 PDF