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    GMA01U Search Results

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    GMA01U Price and Stock

    Rochester Electronics LLC GMA01U-AT1

    RECTIFIER DIODE, 0.12A
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    DigiKey GMA01U-AT1 Bulk 11,539
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    onsemi GMA01U-AT1

    GMA01U-AT1
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    Verical GMA01U-AT1 51,970 14,085
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    Rochester Electronics GMA01U-AT1 51,970 1
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    • 100 $0.0235
    • 1000 $0.0213
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    GMA01U Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GMA01U Sanyo Semiconductor Epitaxial Planar Silicon Diode Original PDF
    GMA01U Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GMA01U Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    GMA01U Unknown Silicon Diode Scan PDF
    GMA01U Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    GMA01U-E Sanyo Semiconductor DIODE SWITCHING 105V 0.12A 2DO-35 Original PDF

    GMA01U Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GMA01U

    Abstract: No abstract text available
    Text: GMA01U 注文コード No. N 1 0 6 5 D 三洋半導体データシート 半導体ニューズ No.1065C をさしかえてください。 GMA01U シリコンエピタキシャルプレーナ型 超高速スイッチングダイオード バイアス安定用


    Original
    GMA01U 1065C 300mW DO-35 92706DH TC-00000133 N188KN 62797GI BX-0698 GMA01U PDF

    GMA01U

    Abstract: No abstract text available
    Text: GMA01U Ordering number : EN1065D SANYO Semiconductors DATA SHEET Epitaxial Planar Silicon Diode GMA01U Ultrahigh-Speed Switching, Bias Stabilizing Applications Features • • • • • Glass sleeve structure. Allowable power dissipation : P=300mW max.


    Original
    GMA01U EN1065D 300mW DO-35 GMA01U PDF

    GMA01

    Abstract: GMA01U
    Text: Ordering number:EN1065C GMA01, 01U Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications Features Package Dimensions • Glass sleeve structure. · Allowable power dissipation : P=300mW max. · Interterminal capacitance : c=3.0pF max.


    Original
    EN1065C GMA01, 300mW DO-35 GMA01 GMA01U GMA01 GMA01U PDF

    GMA01

    Abstract: GMA01U
    Text: Ordering number:EN1065C GMA01, 01U Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications Features Package Dimensions • Glass sleeve structure. · Allowable power dissipation : P=300mW max. · Interterminal capacitance : c=3.0pF max.


    Original
    EN1065C GMA01, 300mW DO-35 GMA01 GMA01U GMA01 GMA01U PDF

    ESJA56-24

    Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


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    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA58-08 PDF

    ESJA56-24

    Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


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    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA58-08 PDF

    ESJA56-24

    Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


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    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA58-08 PDF

    GMA01

    Abstract: No abstract text available
    Text: SAMYO ¡ , G M IS Ít * , A 0 1 , Q Ü - 1N o . 1G65C 1 2 69 v 'j z ¡ > x t : ? * v 7 ^ 7 V - t 7 f 5 - J ; — J g Ü i l X - f "J f -> 7 # - f t f - JV P -300m W max, fifi 7 £1 %i 'tf7.X 7,'J-7fí|5 -* * l!IJ S i: K : c = 3 .0 p F max< - | rr = 4-Otis maxo


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    1Q65C Kal065B GMA01 300mW CGMA01) -100V 10mAt% GMA01, PDF

    GMA01

    Abstract: GMA01U
    Text: Ordering number : EN1065C GMA01,01U NO.1065C E p itax ial P la n a r Silicon Diode Very High-Speed Switching, B ias S tabilizing Applications Features • Glass sleeve s tru c tu re • Allowable power dissipation : P = 300m W max. •In te r te rm in a l capacitance : c = 3.0pF max.


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    EN1065C 300mW DO-35 GMA01 GMA01U PDF

    ESJA56-24

    Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


    OCR Scan
    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA58-08 PDF

    ESJA56-24

    Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 24k 3000 4000


    OCR Scan
    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA58-08 PDF

    ESJA56-24

    Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


    OCR Scan
    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA58-08 PDF

    357B

    Abstract: ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


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    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 357B ESJA58-08 PDF

    d1684

    Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
    Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249


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    2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460 PDF

    3FTA

    Abstract: ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


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    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 3FTA ESJA58-08 PDF

    ESJA56-24

    Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


    OCR Scan
    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA58-08 PDF

    ESJA56-24

    Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


    OCR Scan
    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA58-08 PDF

    ESJA56-24

    Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


    OCR Scan
    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA58-08 PDF

    d1878

    Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
    Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258


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    A1527 A1528 A1537 A1540 A1573 A1574 A1575 A1580 A1590 A1607 d1878 D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459 PDF

    ESJA56-24

    Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
    Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250


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    ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA58-08 PDF

    DSB010

    Abstract: DS442X
    Text: SAf/YO Q u i c k G u i d e To Small afc Ver-y Fast. Swi t o h i ng Type No. Package Out 1ine No. :Marking General purpose Diodes Di o d e s Electrical Characteristics/Ta=25°C Absolute Maximum Ratings/Ta=25’C Features Signal Remarks VR 10 IFM (V) (mA)


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    Do-35 Do-34 Do-34S LL-34 DSB010 DS442X PDF