H11G2M
Abstract: No abstract text available
Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon
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H11G1M,
H11G2M,
H11G3M
H11GXM
H11G1M
H11G2M
E90700,
H11G2M
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H11G1
Abstract: H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M H11G1M H11G1SM fairchild logic
Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon
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H11G1M,
H11G2M,
H11G3M
H11GXM
H11G1M
H11G2M
E90700,
H11G1
H11G1SR2M
H11G1TM
H11G1VM
H11G2M
H11G3M
H11G1M
H11G1SM
fairchild logic
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H11GX
Abstract: H11G1 datasheet H11G2 H11G1 H11G3
Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
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H11G1
H11G2
H11G3
H11GX
E90700
00045A
H11G1 datasheet
H11G2
H11G1
H11G3
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H11G1
Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon
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Original
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H11G1M,
H11G2M,
H11G3M
H11GXM
H11G1M
H11G2M
E90700,
H11G1
H11G1M
H11G1SM
H11G1SR2M
H11G1TM
H11G1VM
H11G2M
H11G3M
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H11GX
Abstract: H11G1 H11G2 H11G3
Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
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H11G1
H11G2
H11G3
H11GX
E90700
H11G1
H11G2
H11G3
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PDF
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H11GX
Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers tm Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon
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Original
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H11G1M,
H11G2M,
H11G3M
H11GXM
H11G1M
H11G2M
E90700,
H11GX
H11G1M
H11G1SM
H11G1SR2M
H11G1TM
H11G1VM
H11G2M
H11G3M
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h11g1 case 730c-04
Abstract: H11GX 1N4004 H11G1 H11G2 H11G3 motorola 1n4004
Text: MOTOROLA Order this document by H11G1/D SEMICONDUCTOR TECHNICAL DATA H11G1 * [CTR = 1000% Min] GlobalOptoisolator H11G2* 6-Pin DIP Optoisolators Darlington Output On-Chip Resistors The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral
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H11G1/D
H11G1
H11G2*
H11G1,
H11G2
H11G3
H11G3
H11Ging
h11g1 case 730c-04
H11GX
1N4004
H11G1
motorola 1n4004
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soc1044
Abstract: SOC1044M H11Ax H11SBDXM_108R2 h11sbdxm H11LXM h11lxm5555r2 MOC3022 H11SADXM h11cx
Text: Date Created: 4/21/2004 Date Issued: 4/30/2004 PCN # 20033602-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.
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0033602-A
MOCD213R2VM
MOCD217R1M
MOCD217R2VM
MOCD223R1M
MOCD223R2VM
OF4822300W
SL5500300W
SL5500S
SL5501
soc1044
SOC1044M
H11Ax
H11SBDXM_108R2
h11sbdxm
H11LXM
h11lxm5555r2
MOC3022
H11SADXM
h11cx
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h11cx
Abstract: H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422
Text: Date Created: 1/27/2004 Date Issued: 2/24/2004 PCN # 20034307-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.
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0034307-A
MOC8102
MOC81023S
MOC8102S
MOC8103
MOC81033S
MOC8103SD
MOC8104300
MOC81043SD
MOC8104W
h11cx
H11GXK
H11Ax
h11agx
H11AD9X
h11dx
H11GD6X
JESD22-110-B
H11AD6X
h11bd6x5422
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h11q
Abstract: H11Q2 H11U
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL CSA <D ® ® 8ET1 H11G1* H11G2* H11G3 8 EMKO DEMKO NEMKO [CTR • 1000% Min] GlobalOptdsolfttor 6 -Pin DIP Optoisolators Darlington Output On-Chip Resistors The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs
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OCR Scan
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H11G1,
H11G2
H11G3
H11G1*
H11G2*
H11G3
H11G1
H11G1
H11Gx
h11q
H11Q2
H11U
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H11DX
Abstract: 740L6010 H11Ax 740L6001 Optocouplers QTC 740L6000 H11GX H11A1Z QTC 740L6000 mct6 optocoupler
Text: mm QUALITY UL PACKAGE CODES • l TECHNOLOGIES UL APPROVED OPTOCOUPLERS UL LISTING - YELLOW CARD A UL yellow card may either specify the optocoupler manufacturer’s own device part number or a package code. Optocouplers are listed as a package code consisting of a single
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OCR Scan
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E501B1
8916R19&
E50151
CNX35
MID400,
H11GX,
MCT52XX,
740L6000,
740L6001,
740L6010,
H11DX
740L6010
H11Ax
740L6001
Optocouplers QTC
740L6000
H11GX
H11A1Z
QTC 740L6000
mct6 optocoupler
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H11GX
Abstract: GE H11G1 H11G2 H11G1 IEC204 VDE0113 VDE0160 VDE0832
Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA H11G1 H11G2 H11G3 6-Pin DIP O ptoisolators Darlington Output . . . consists of gallium -arsenide IREDs optically coupled to silicon photodarlington detec tors which have integral base-emitter resistors. The on-chip resistors improve higher
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OCR Scan
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H11G1
H11G2
H11G1,
H11G2,
H11G3
50-VOLT,
H11Gx
H11Gx
GE H11G1
H11G2
H11G1
IEC204
VDE0113
VDE0160
VDE0832
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opt 300
Abstract: h11dx Optocouplers QTC qtc optocoupler h11ax Qtc mct6 qtc cny17-1 OPT300 MCT22XX fpqu2
Text: æO UL PACKAGE CODES 0PTOELECTmmCS UL APPROVED OPTOCOUPLERS UL LISTIN O •YELLOW CARD G EN ERAL A UL yellow card may either specify the optocoupler manufacturer's own device part number or a package code. Optocouplers are listed as a package code consisting of a single
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OCR Scan
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E50151
3407U001
MID400,
H11GX,
MCT52XX,
740L6000,
740L6001,
740L6010,
CNY17-X,
CNY17F-X,
opt 300
h11dx
Optocouplers QTC
qtc optocoupler
h11ax
Qtc mct6
qtc cny17-1
OPT300
MCT22XX
fpqu2
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h11g1 case 730c-04
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA TO Q VD € Ul CSA SETI <§> ® SEMKO DEMKO H11G1* H11G2* H11G3 NEM KO [CTR . 1000% M in] 6-Pin D IP O ptoisolators Darlington Output On-Chip R esistors [CTR = 1000% Min] [CTR * 200% Min] ‘ M otorola P referred
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OCR Scan
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H11G1,
H11G2
H11G3
H11G1
H11G2--
H11G1
H11G1*
H11G2*
H11G3
h11g1 case 730c-04
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