HB56A19A-12
Abstract: HB56A19A7L
Text: HB56A19L Series 1,048,576-W ord x 9-B it High Density Dynam ic RAM M odule • PIN O U T ■ D ESCRIPTIO N The HB56A19 is a 1M x 9 dynamic RAM module, mount ed nine 1 Mbit DRAM HM511000ALJP sealed in SOJ pack age. An outline of the HB56A19 is 30-pin single in-line pack
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HB56A19L
HB56A19
HM511000ALJP)
30-pin
HB56A19A,
HB56A19AT)
HB56A19B,
HB56A19GB)
HB56A19A-12
HB56A19A7L
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HB56A19B
Abstract: HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A HB56A19
Text: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type
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HB56A19
576-Word
511000JP)
30-pin
HB56A19A,
HB56A19AT)
HB56A19B)
HB56A19B
HB56A19B8A
HB56A19B10A
HB56A19B-7H
511000a
HB56A19AT10A
HB56A19B-8A
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HB56A19B
Abstract: No abstract text available
Text: HB56A19 Series-1,048,576-words x 9 bits High Density Dynamic R A M Module The H B 5 6A 19 is a 1M x 9 dynamic R A M module, mounted 9 pieces of 1-Mbit D R A M HM511000JP sealed in SO J package. A n outline of the H B56A 19 is 30-pin single-in-line package having
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HB56A19
576-words
HM511000JP)
30-pin
HB56A19B)
HM511000JP
54niu.
10Qmin.
a005i
HB56A19B
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Untitled
Abstract: No abstract text available
Text: HB56A19A/AT/B-6H/7H/8A/10A/12A 1,048,576-Word x 9-Bit High Density Dynamic RAM Module P in N o . • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types
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HB56A19A/AT/B-6H/7H/8A/10A/12A
576-Word
HB56A19
HM511000JP)
30-pin
HB56A19A,
HB56A19AT)
HB56A19B)
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HM511000
Abstract: No abstract text available
Text: HB56A19L S eries-1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A19 is a 1M x 9 dynamic RAM module, mount ed nine 1 Mbit DRAM HM511000ALJP sealed in SOJ pack age. An outline of the HB56A19 is 30-pin single in-line pack
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OCR Scan
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PDF
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HB56A19L
576-Word
HB56A19
HM511000ALJP)
30-pin
HB56A19A,
HB56A19AT)
HB56A19B,
HB56A19GB)
HM511000
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HB56A19B
Abstract: HB56A19B8A zp 1401 HB56A19B10A SIMM 30-pin HB56A19A-12 HB56A19A-12A HB56A19
Text: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type
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OCR Scan
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PDF
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HB56A19
576-Word
HM511000JP)
30-pin
HB56A19A,
HB56A19AT)
HB56A19B)
HB56A19B
HB56A19B8A
zp 1401
HB56A19B10A
SIMM 30-pin
HB56A19A-12
HB56A19A-12A
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR FEATURES DS2219 N onvolatile D R AM Stik 1 M x 9 PIN ASSIGNMENT • Maintains data in the absence of system power o • Compatible with existing DRAM SIMM applications • Normal operating mode completely unaffected • Nonvolatile circuitry transparent and independent
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DS2219
30-position
10-volt
1024K
30-Pin
DS2219
S2219
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416C256
14800A
14900A
514170B
514280B
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
HN624017FB
K93C46
93cs46n
MB832001
hn62308
41C1000
93C46LN
41464
hn623257
HM63832
DT71256
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nec 424256
Abstract: nec 424100 511000 424256 424256 nec KM41C1000 NEC 421000 m5m44c256 S4C1024 514256
Text: SIEM EN S Cross reference Memory Components 1 Mx1 256 K SIE M E N S HYB 511000 HYB 514256 HYB 514100 TO SHIBA TC 511000 TC 514256 TC 514100 HITACHI HM 511000 HM 514256 HM 514100 NEC jiP D 421000 XPD 424256 (XPD 424100 M ITSUBISHI M5M4C1000 M5M44C256 M5M514000
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M5M4C1000
MSM511000
MB81C1000
KM41C1000
MT4C1024
S4C1024
M5M44C256
MB81C4256
KM44C256
MT4C4256
nec 424256
nec 424100
511000
424256
424256 nec
NEC 421000
514256
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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30 pin SIP dram memory
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR FEATURES DS2219 Nonvolatile DRAM Stik 1M x 9 PIN ASSIGNMENT • Maintains data in the absence of system power o • Compatible with existing DRAM SIMM applications • Normal operating mode completely unaffected • Nonvolatile circuitry transparent and independent
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30-position
10-volt
1024K
DS2219
30-Pin
DS2219
30 pin SIP dram memory
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