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    POWER MOSFET Rise Time 1 ns

    Abstract: mosfet gate source voltage 20v
    Text: N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFF640 █ APPLICATIONSL TO-220F High Voltage High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） 1 T stg ——Storage Temperature……………………………－55~150℃


    Original     		HFF640 O-220F Width300sDuty 200VVGS POWER MOSFET Rise Time 1 ns mosfet gate source voltage 20v PDF