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    Text: BVDSS = 60 V RDS on = 18 mΩ HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES  Originative New Design HFW50N06  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFI50N06 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


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