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    onsemi HGTD7N60C3S9A

    IGBT 600V 14A TO252AA
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    DigiKey HGTD7N60C3S9A Cut Tape 2,000 1
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    HGTD7N60C3S9A Digi-Reel 2,000 1
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    Verical HGTD7N60C3S9A 5,000 273
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    Rochester Electronics HGTD7N60C3S9A 5,000 1
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    Rochester Electronics LLC HGTD7N60C3S9A

    INSULATED GATE BIPOLAR TRANSISTO
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    DigiKey HGTD7N60C3S9A Bulk 249
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    Fairchild Semiconductor Corporation HGTD7N60C3S9A

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    Quest Components HGTD7N60C3S9A 1,079
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    Rochester Electronics HGTD7N60C3S9A 249 1
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    ComSIT USA HGTD7N60C3S9A 67,816
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    Harris Semiconductor HGTD7N60C3S

    HGTD7N60 - HGTD7N60 - 600 V, 14 A, N-Channel IGBT '
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    Rochester Electronics HGTD7N60C3S 33 1
    • 1 $1.29
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    HGTD7N60C3S Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTD7N60C3S Fairchild Semiconductor 14A,600V, UFS Series N-Channel IGBTs Original PDF
    HGTD7N60C3S Fairchild Semiconductor 14 A, 600 V, UFS N-Channel IGBT Original PDF
    HGTD7N60C3S Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTD7N60C3S Harris Semiconductor 14A, 600V, UFS Series N-Channel IGBTs Original PDF
    HGTD7N60C3S Intersil 14A, 600V, UFS Series N-Channel IGBTs Original PDF
    HGTD7N60C3S Intersil 14A, 600V, UFS Series N-Channel IGBTs Scan PDF
    HGTD7N60C3S9A Fairchild Semiconductor 14 A, 600 V, UFS N-Channel IGBT Original PDF
    HGTD7N60C3S9A Intersil 14A, 600V, UFS Series N-Channel IGBTs Scan PDF

    HGTD7N60C3S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G7N60C3

    Abstract: g7n60c HGTD7N60C3S9A HGTD7N60C3S HGTP7N60C3 LD26 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 g7n60c HGTD7N60C3S9A LD26 RHRD660 PDF

    G7N60C3

    Abstract: G7N60 g7n60c HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 G7N60 g7n60c HGTD7N60C3S9A RHRD660 PDF

    G7N60C3

    Abstract: No abstract text available
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 PDF

    g7n60c

    Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
    Text: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging • 14A, 600V at TC = +25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time - 140ns at TJ = +150oC


    Original     		HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 O-220AB 140ns 150oC O-251AA HGTD7N60C3S HGTP7N60C3 g7n60c G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S9A RHRD660 PDF

    G7N60

    Abstract: G7N60C3 G7N60C HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60 G7N60C3 G7N60C HGTD7N60C3S9A LD26 RHRD660 PDF

    g7n60c

    Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
    Text: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs January 1997 Features Packaging • 14A, 600V at TC = 25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC


    Original     		HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 O-220AB 140ns 150oC O-251AA HGTD7N60C3S HGTP7N60C3 g7n60c G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S9A RHRD660 PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    P channel 600v 20a IGBT

    Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3
    Text: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3 PDF

    INDUCTION HEATING

    Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
    Text: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)


    Original     		HGT1N30N60A4D HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 SGF23N60UFD SGF15N60RUFD SGF40N60UF INDUCTION HEATING induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D PDF

    HGTP7N60B3D

    Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
    Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    RURU8060

    Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
    Text: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers


    Original     		FGS15N40L OT-227 HGT1N30N60A4D HGT1N40N60A4D O-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 RURU8060 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor PDF

    mosfet 1200V 40A

    Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
    Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA


    Original     		LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S PDF

    HGTG30N60A4

    Abstract: HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S
    Text: IGBT Selection Guide TM 600V FAMILIES NOTE 1 IC RATED OR IC AT 110oC 3A TO-252AA (D-PAK) TO-220AB TO-263AB (D2-PAK) HGTD3N60A4S 2.7V 100ns HGTP3N60A4 2.7V 100ns HGT1S3N60A4S 2.7V 100ns HGTD3N60B3S 2.1V 175ns HGTP3N60B3 2.1V 175ns HGT1S3N60B3S 2.1V 175ns


    Original     		110oC O-220AB O-263AB HGTD3N60A4S 100ns HGTP3N60A4 HGT1S3N60A4S HGTD3N60B3S HGTG30N60A4 HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S PDF

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: smps circuit diagram 450w DATASHEET OF IC 741C ATX smps troubleshooting atx power supply 450W schematic PWM 220v ac stabilizer aPPLICATION NOTES ON KA3525A ka3842a application note atx power supply 450W SG6105
    Text: POWER S O L U T I O N S Fairchild’s Power Solutions Fairchild Semiconductor is a global leader in delivering energy-efficient power analog, power discrete, and optoelectronic solutions. These products maximize energy savings in power-sensitive applications such as power


    Original     		PDF

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C


    OCR Scan     		HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 22oab 140ns HGTD7N60C3S HGTP7N60C3 PDF

    G7N60C

    Abstract: 7N60C 627 DIODE 7N60 STA 933 D7N60
    Text: HARRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 Features Packaging J E D E C TO-22QAB • 14A, 600V at Tc = 25 °C • 600V Sw itching SOA Capability • T y p i c a l F a ll T i m e . 1 4 0 n s a t T j = 1 S 0 ° C


    OCR Scan     		HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 O-22QAB O-251 G7N60C 7N60C 627 DIODE 7N60 STA 933 D7N60 PDF

    G7N60C3

    Abstract: g7n60c G7N60 TA49115 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 in t e r r ii J a n u a ry . m i D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		HGTD7N60C3S HGTP7N60C3 TA49115. HGTD7N60C3S, HGTP7N60C3 G7N60C3 g7n60c G7N60 TA49115 HGTD7N60C3S9A LD26 RHRD660 PDF

    TO-263

    Abstract: TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS
    Text: INSULATED GATE BIPOLAR T R A N S I S T O R S The U FS SE R IE S of IGBTs Insulated specified in surface-mounted packages variety of applications requiring high Gate Bipolar Transistors is available in ranging from TO-252AA to TO-263AB. power control. 600V and 1200V ratings and may be


    OCR Scan     		O-252AA O-263AB. O-263 O-252 TO-263 TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS PDF