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    HN3C09FU Search Results

    HN3C09FU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN3C09FU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C09FU Toshiba NPN Multi-Chip Composite Transistor Pair Scan PDF
    HN3C09FU(TE85L) Toshiba TRANS GP BJT NPN 12V 0.03A 6(2-2J1A) T/R Scan PDF

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    HN3C09FU

    Abstract: No abstract text available
    Text: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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    HN3C09FU

    Abstract: No abstract text available
    Text: TO SH IBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING


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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C09FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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    Abstract: marking .TI
    Text: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in U S 6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage


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