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    HUF75309 Price and Stock

    Rochester Electronics LLC HUF75309P3

    MOSFET N-CH 55V 19A TO220-3
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    DigiKey HUF75309P3 Tube 683
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    onsemi HUF75309P3

    MOSFET N-CH 55V 19A TO220-3
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    DigiKey HUF75309P3 Tube
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    onsemi HUF75309D3S

    MOSFET N-CH 55V 19A DPAK
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    DigiKey HUF75309D3S Tube 1,800
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    Rochester Electronics LLC HUF75309D3S

    MOSFET N-CH 55V 19A DPAK
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    DigiKey HUF75309D3S Tube 1,025
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    HUF75309D3S Tube 1,025
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    onsemi HUF75309T3ST

    MOSFET N-CH 55V 3A SOT223-4
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    DigiKey HUF75309T3ST Reel 2,500
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    Find more HUF75309 price and stock on Findchips.com

    HUF75309 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75309D3 Fairchild Semiconductor 19 A, 55 V, 0.070 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3 Harris Semiconductor 17A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3 Intersil 19A, 55V, 0.070 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75309D3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75309D3S Fairchild Semiconductor 19A, 55V, 0.070 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75309D3S Fairchild Semiconductor 19 A, 55 V, 0.070 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3S Harris Semiconductor 17A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3S Intersil 19A, 55V, 0.070 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75309D3ST Fairchild Semiconductor 19 A, 55 V, 0.070 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-252, 3-Pin Original PDF
    HUF75309D3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75309D3ST_NL Fairchild Semiconductor 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75309P3 Fairchild Semiconductor 19A, 55V, 0.070 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75309P3 Fairchild Semiconductor 19 A, 55 V, 0.070 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309P3 Harris Semiconductor 17A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309P3 Intersil 19A, 55V, 0.070 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75309P3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75309P3_NL Fairchild Semiconductor 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75309T3ST Fairchild Semiconductor 3 A, 55 V, 0.070 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309T3ST Intersil 3A, 55V, 0.070 ?, N-Channel UltraFET Power MOSFET Original PDF

    HUF75309 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    59E-1

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
    Text: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF75309T3ST 59E-1 AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75309P3, HUF75309D3, HUF75309D3S 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75309T3ST Data Sheet June 1999 File Number 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75309T3ST

    AN9322

    Abstract: HUF75309T3ST TB334 AN7254 AN9321 75309
    Text: HUF75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75309T3ST AN9322 HUF75309T3ST TB334 AN7254 AN9321 75309

    75309P

    Abstract: 75309d AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 317E-10 431E-6
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75309P3, HUF75309D3, HUF75309D3S 43oducts 75309P 75309d AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 317E-10 431E-6

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: HUF75309P3, HUF75309D3, HUF75309D3S S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 17A, 55V • Ultra Low On-Resistance, rDS ON = 0.070Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		PDF HUF75309P3, HUF75309D3, HUF75309D3S TB334, HUF75309 1-800-4-HARRIS 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334

    AN7254

    Abstract: AN9321 AN9322 HUF75309T3ST TB334
    Text: HUF75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75309T3ST AN7254 AN9321 AN9322 HUF75309T3ST TB334

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75309P3, HUF75309D3, HUF75309D3S 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334

    75309P

    Abstract: AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3
    Text: HUF75309P3, HUF75309D3, HUF75309D3S S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 17A, 55V The HUF75309 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		PDF HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 1-800-4-HARRIS 75309P AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original     		PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365

    HUF75307D

    Abstract: No abstract text available
    Text: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology


    Original     		PDF 5V/75A/0 OT-223 O-251AA/252AA O-220AB HUF75345P3 HUF75343P3 HUF75339P3 HUF75337P3 HUF75333P3 O-262AA/263AB HUF75307D

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75309T3ST Semiconductor November 1998 Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET w File Number 4377.2 Features • 3 A ,5 5 V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced • Ultra Low On-Resistance, ros ON = 0.070Q


    OCR Scan     		PDF HUF75309T3ST TB334, O-261 HUF75309T3ST OT-223 EIA-481

    75309P

    Abstract: TA75309
    Text: HUF75309P3, HUF75309D3, HUF75309D3S HARRIS S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 17A, 55V • Ultra Low On-Resistance, ros ON = 0-070i2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S 0-070i2 TB334, HUF75309 75309P TA75309

    TL 431 model SPICE

    Abstract: Simulation Model tl 431
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 TL 431 model SPICE Simulation Model tl 431

    Untitled

    Abstract: No abstract text available
    Text: HUF75309T3ST S em iconductor November 1998 Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.2 Features 3A,55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		PDF HUF75309T3ST portab-90. OT-223 EIA-481

    75309P

    Abstract: No abstract text available
    Text: HUF75309P3, HUF75309D3, HUF75309D3S integri! D a ta S h e e t Ju n e 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power M O S F E Ts are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S por19A AN7254 AN7260. 75309P

    Untitled

    Abstract: No abstract text available
    Text: HUF75309T3ST in t e r r ii Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET a 4377.3 Features • 3A, 55V T h is N -C hannel pow e r M O S F E T is m File N um ber • U ltra Low O n-Ftesistance, rc s jO N = 0 .0 7 0 0 m anu facture d using the innovative


    OCR Scan     		PDF HUF75309T3ST

    Diode LT n5

    Abstract: No abstract text available
    Text: HUF75309P3, HUF75309D3, HUF75309D3S S em iconductor Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. " This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 Diode LT n5