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Semtech Corporation SHVM10 DIODE GEN PURP 10KV 500MA MODULE
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Semtech Corporation S3HVM10 DIODE GEN PURP 10KV 1.2A MODULE
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Semtech Corporation S2HVM10 DIODE GEN PURP 10KV 1.2A MODULE
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DigiKey	S2HVM10	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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Micross Components S3HVM10 (Alt: S3HVM10)
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Avnet Americas	S3HVM10			17 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micross Components SHVM10 (Alt: SHVM10)
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Avnet Americas	SHVM10			17 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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HVM10 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
HVM10	DC Components	TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE ASSEMBLIED RECTIFIER	Original	PDF
HVM10	Leshan Radio Company	HIGH-VOLTAGE DIODES	Original	PDF
HVM10	Rectron Semiconductor	HIGH VOLTAGE ASSEMBLIED RECTIFIER	Original	PDF
HVM10	Rectron Semiconductor	HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes)	Original	PDF
HVM10	Sensitron Semiconductor	HIGH VOLTAGE RECTIFIER	Original	PDF
HVM10	CEIEC	Rectifier Diode: Single: 10000V: HVM: 2-Pin	Scan	PDF
HVM100	Hitachi Semiconductor	Silicon Epitaxial Planar Diode for High Voltage Switching	Original	PDF
HVM10000	Sino-American Silicon Products	550mA Iout, 10kV Vrrm General Purpose Silicon Rectifier	Scan	PDF
HVM10L	Rectron Semiconductor	HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 10000 Volts CURRENT 0.35 Amperes	Original	PDF

HVM10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-470 Z Rev 0 Features • • • • High capacitance ratio. (n = 16.0 min) High figure of merit. (Q = 200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.	Original	PDF	HVM100 ADE-208-470 HVM100 450pF, 200pF
Hitachi DSA001653 Abstract: No abstract text available Text: HVM100 Silicon Epitaxial Planar Diode for AM tuner ADE-208-470A Z Rev. 1 Sept. 1, 1998 Features • • • • High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltage. MPAK package is suitable for high density surface mounting and high speed assembly.	Original	PDF	HVM100 ADE-208-470A Hitachi DSA001653
HVM100 Abstract: SC-59A vr15a Hitachi DSA00302 Text: HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-470 Z Rev 0 September 1996 Features • • • • High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.	Original	PDF	HVM100 ADE-208-470 SC-59A HVM100 SC-59A vr15a Hitachi DSA00302
Untitled Abstract: No abstract text available Text: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………	Original	PDF	CM1200HC-90R HVM-1057-A
MT 2800 N Abstract: D 1062 transistor CM800HG-90R Text: Prepared by S. Iura Approved by H. Yamaguchi : Jul. 2010 MITSUBISHI HVIGBT MODULES Revision: 1.0 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HG-90R ● IC ………………………	Original	PDF	CM800HG-90R HVM-1062 MT 2800 N D 1062 transistor CM800HG-90R
D 1062 transistor Abstract: HVM-1062 Text: CONFIDENTIAL MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jul. 2010 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY	Original	PDF	CM800HG-90R HVM-1062 D 1062 transistor HVM-1062
2x062h Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1	Original	PDF	ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
CM400HG130H Abstract: No abstract text available Text: CONFIDENTIAL Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules COMPANY PROPRIETARY	Original	PDF	CM400HG-130H HVM-1045-A CM400HG130H
CM1500HG-66R Abstract: cm1500hG CM1500HG -66R Text: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1500HG-66R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1500HG-66R ● IC ………………………	Original	PDF	CM1500HG-66R HVM-1059 CM1500HG-66R cm1500hG CM1500HG -66R
1035 transistor Abstract: No abstract text available Text: CONFIDENTIAL Revision: C Prepared by S.Iura Date I.Umezaki 5-Sep.-2011 MITSUBISHI HVIGBT MODULES CM2400HC-34N th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor MODULES HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC	Original	PDF	CM2400HC-34N HVM-1035-C 1035 transistor
Untitled Abstract: No abstract text available Text: R oH S C om plian t HIGH VOLTAGE RECTIFIERS PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGE TEMPERATURE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum	Original	PDF	VOLTAGE/DO-15 R2500 R3000 R4000 R5000 VOLTAGE/DO-41 R1200F R1500F R1800F R2000F
CM1000HC-66R Abstract: 1061 transistor HVIGBT transistor h 1061 Text: < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000HC-66R       IC •······························································ 1000A	Original	PDF	CM1000HC-66R HVM-1061-B HVM-1061-B) CM1000HC-66R 1061 transistor HVIGBT transistor h 1061
501c1 Abstract: No abstract text available Text: ISDN SO DIL Interface Modules Features • excellent output characteristics ensures compliance with CCITT.I.430 pulse waveform template when used with recommended IC pairing • excellent and consistent balance between windings • operating temperature: 0 to 70°C	Original	PDF	IEC950 EN60950, UL1950 UL1459 501c1
CM400HG-130H Abstract: cm400hg-130 CM400HG130H cm400hg Text: MITSUBISHI HVIGBT MODULES Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 Revision: A CM400HG-130H rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-130H ●IC ……………………… 400 A	Original	PDF	CM400HG-130H HVM-1045-A CM400HG-130H cm400hg-130 CM400HG130H cm400hg

CM750HG-130R Abstract: No abstract text available Text: < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM750HG-130R z z z z z z IC•····························································	Original	PDF	CM750HG-130R HVM-1058-B) CM750HG-130R
Untitled Abstract: No abstract text available Text: < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000HC-66R       IC •······························································ 1000A	Original	PDF	CM1000HC-66R HVM-1061-B HVM-1061-B)
Untitled Abstract: No abstract text available Text: < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HC-90R       IC •······························································· 1200A	Original	PDF	CM1200HC-90R HVM-1057-E
HVM12 350 Abstract: HVM12 HVM10 diode HVM12 HVM15 HVM14 HVM16 Text: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any	Original	PDF	HVM16 HVM10 HVM12 HVM14 HVM15 -20oC 135oC HVM12 350 HVM12 HVM10 diode HVM12 HVM15 HVM14 HVM16
LT 5246 Abstract: HVM100 SC-59A hitachi product ordering Text: HVM100 Silicon Epitaxial Planar Diode for AM tuner HITACHI ADE-208-470A Z Rev. 1 Sept. 1, 1998 Features • High capacitance ratio, (n =16.0 min) • High figure of merit. (Q =200 min) • To be usable at low voltage. • MPAK package is suitable for high density surface mounting and high speed assembly.	OCR Scan	PDF	HVM100 ADE-208-470A HVM100 LT 5246 SC-59A hitachi product ordering
lola Abstract: HVM12 Text: HIGH VOLTAGE ASSEMBLIED RECTIFIERS 0.35 AMPERE TO 0.75 AMPERE 5K VOLTS TO 16K VOLTS S\ ^ - - ^ P R V IV \ T Y P E N O ''''- '- 5KV 8KV 10KV 12KV 14KV 15KV 16KV CASE lolA) \ 0.35 HVM5 HVM8 HVM10 HVM12 HVM14 HVM15 HVM16 HVM 0.75 HVP5 HVP8 HVP10 HVP12 HVP14	OCR Scan	PDF	HVM10 HVP10 HVM12 HVP12 HVM14 HVP14 HVM15 HVP15 HVM16 HVP16 lola
Untitled Abstract: No abstract text available Text: HITACHI HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-470 Z Rev 0 September 1996 Features • High capacitance ratio, (n = 16.0 min) • High figure o f merit. (Q = 200 min) • To be usable at low voltagee. • M PAK package is suitable for high density surface m ounting and high speed assembly.	OCR Scan	PDF	HVM100 ADE-208-470 SC-59A
HVM16L Abstract: HVM12 Text: HIGH VOLTAGE RECTIFIERS Io A PACKAGE \ 0.35 0.35 0.75 HVM-L HVM HVP —1.2 O U T L IN E V m m /T y p .) 18.5 V rrm \ (V o lts) J 1 a 4 40 H e 1 h 7 .0 \ 1 h - M . . HVM8L HVM8 HVP8 10000 HVM10L HVM 10 HVP10 12000 HVM12L HVM 12 HVP 12 14000 HVM14L HVM 14	OCR Scan	PDF	HVM10L HVM12L HVM14L HVM15L HVM16L HVP10 HVM16L HVM12
Untitled Abstract: No abstract text available Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë\| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible	OCR Scan	PDF	HM3500R, HVM10000R to172 148-Pin 244-Pin M2010, M2023 M1008,
L42n Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e Text: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e \| 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:	OCR Scan	PDF	DD00212 HM3500, HE12000 ECL10K/KH/100K 148-Pin MIL-M-38510/600 MIL-STD-883C L42n HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e

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HVM10 Datasheets (9)

HVM10 Datasheets Context Search

Untitled

Hitachi DSA001653

HVM100

Untitled

MT 2800 N

D 1062 transistor

2x062h

CM400HG130H

CM1500HG-66R

1035 transistor

Untitled

CM1000HC-66R

501c1

CM400HG-130H

CM750HG-130R

Untitled

Untitled

HVM12 350

LT 5246

lola

Untitled

HVM16L

Untitled

L42n