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    HXNV01600

    Abstract: No abstract text available
    Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ PRODUCTION - Release Review - -17 28Jun Jun2014 201414:05:31 03:55:11MST MST- -Printed Printedon on26 18Jun Jul 2014 ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness


    Original     		PDF HXNV01600 1x106 1x1010 1x1012 1x10-10 1x1014 ADS-14229 HXNV01600

    HXNV01600

    Abstract: No abstract text available
    Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness 1x1010 rad(Si)/s Dose Rate Survivability 1x1012 rad(Si)/s Soft Error Rate ≤ 1x10-10 upsets/bit-day


    Original     		PDF HXNV01600 1x106 1x1010 1x1012 1x10-10 1x1014 ADS-14229 HXNV01600

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    Abstract: No abstract text available
    Text: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s


    Original     		PDF HXNV01600 1x106 1x109 1x1012 1x10-10 1x1014 1x1015