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    SK Hynix Inc HY57V168010DTC-10S

    IC,SDRAM,2X1MX8,CMOS,TSOP,44PIN,PLASTIC
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    Quest Components HY57V168010DTC-10S 2,710
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    HY57V168010DTC-10S 1
    • 1 $1.875
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    • 100 $1.875
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    HY57V16801 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY57V168010C

    Abstract: HY57V168010CLTC-8 HY57V168010CLTC-10S
    Text: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of


    Original     		HY57V168010C HY57V168010C 216-bits 576x8. 400mil 44pin HY57V168010CLTC-8 HY57V168010CLTC-10S PDF

    HY57V168010C

    Abstract: hy57v168010 HY57V168010CTC-10 hy57v16801 HY57V168010CLTC-10S 1SD31-11-MAR98 hy57v168010cltc 1sd31
    Text: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of


    Original     		HY57V168010C HY57V168010C 216-bits 576x8. 1SD31-11-MAR98 400mil 44pin hy57v168010 HY57V168010CTC-10 hy57v16801 HY57V168010CLTC-10S 1SD31-11-MAR98 hy57v168010cltc 1sd31 PDF

    HY57V168010D

    Abstract: hy57v168010d-tc-10s HY57V168010DTC-10 HY57V168010DTC-10S hy57v168010 HY57V168
    Text: HY57V168010D 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010D is organized as 2banks of


    Original     		HY57V168010D HY57V168010D 216-bits 576x8. 400mil 44pin hy57v168010d-tc-10s HY57V168010DTC-10 HY57V168010DTC-10S hy57v168010 HY57V168 PDF

    HY57V168010D

    Abstract: HY57V168010
    Text: HY57V168010D 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010D is organized as 2banks of


    Original     		HY57V168010D HY57V168010D 216-bits 576x8. 400mil 44pin HY57V168010 PDF

    HYM7V65400

    Abstract: No abstract text available
    Text: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    Original     		HYM7V65400C 4Mx64 44-pin 168-pin HYM7V65400 PDF

    HY57V164010C-10

    Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
    Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of


    Original     		HY57V164010C HY57V164010C 216-bits 152x4. 1SD30-11-MAR98 400mil 44pin HY57V164010C-10 hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S PDF

    hy57v168010c

    Abstract: HYM7V65400CLTFG-10P HYM7V65400
    Text: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    Original     		HYM7V65400C 4Mx64 44-pin 168-pin hy57v168010c HYM7V65400CLTFG-10P HYM7V65400 PDF

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832 PDF

    KM416S4030BT-G10

    Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PC100 KM416S4030BT-G10 KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821 PDF

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 PDF

    hy57v16801

    Abstract: 1SD02
    Text: »14«9Y II II n AI I u n u i l l HY57V16801 Series 2M X 8 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16801 is a very high speed 3 3 V olt synchronous dynamic RAM organized 2,097,152x8bits, and fabricated with the Hyundai CM OS process. This dual bank circuit consists of tw o memories, each 1,048,576


    OCR Scan     		57V16801 HY57V16801 152x8bits, 50MHz 66MHz 80MHz 100MHz 1SD02-00-MAY95 1SD02 PDF

    hy57v168010b

    Abstract: hy57v168010 hy57v16801
    Text: -H Y U N D A I - • H Y 5 7 V 1 6 8 0 1 0 B 2 Banks x IM X 8 Bit Synchronous ORAM DESCRIPTION The Hyundai HY57V168010B is a 16,777, 216-bits CMOS Synchronous DRAM, ideally suited tor the main memory applications which require large memory density and high bandwidth. HY57V168010B is organized as 2banks of


    OCR Scan     		HY57V168010B 216-bits 576x8. 400mil 44pin hy57v168010 hy57v16801 PDF

    hy57v168010b

    Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
    Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x


    OCR Scan     		256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN PDF

    hy57v168010D

    Abstract: IRRC
    Text: -HYUNDAI - « H Y 5 7 V 1 6 8 0 1 0 D 2 Banks x 1 U X 8 Bit Synchronous DRAU DESCRIPTION Preliminary The Hyundai HY57V168010D is a 16, 7 7 7 ,216-bits CMOS Synchronous DRAM ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010D is organized as 2banks of


    OCR Scan     		HY57V168010D 216-bits 576x8. 400mil 44pin 0-Q235 1SD41-1Q-MAR98 IRRC PDF

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I TM I tf n U i t HY57V16801 Series 2M I X 8 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16801 is a very high speed 3.3 Volt synchronous dynamic RAM organized 2,097,152x8bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 1,048,576


    OCR Scan     		HY57V16801 152x8bits, 1SD02-00-MAY95 4L750fifi 400mil 4b750flfi PDF

    hy57v168010

    Abstract: HY57V164010 HYM7V64100T 1M - PCMCIA linear card 1M - FLASH PCMCIA linear card HY57V32 2M - FLASH PCMCIA linear card HY5117400ASLT
    Text: Sync. DRAM MODULE As of '96.3Q TYPE SIZE SPEED REF. 168 Pin 8MB M X 64 Sync. HYM7V64100TR 10/12/15 4K HY57V161610 x4 DIMM 16MB 2M X64 Sync. HYM7V64200TR 10/12/15 4K HY57V161610X8 HYM7V64200TF 10/12/15 4K HY57V168010x8 DESCRIPTION. PART NO. Unbuffered 32MB


    OCR Scan     		HYM7V64100TR HYM7V64200TR HYM7V64200TF HYM7V72A200TF HYM7V64400TK HYM7V64400TF HY57V161610 HY57V161610X8 HY57V168010x8 HY57V168010 HY57V164010 HYM7V64100T 1M - PCMCIA linear card 1M - FLASH PCMCIA linear card HY57V32 2M - FLASH PCMCIA linear card HY5117400ASLT PDF

    HY57V161610TC

    Abstract: No abstract text available
    Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC


    OCR Scan     		16Mbit HY57V164010TC HY57V168010TC HY57V161610TC HY57V644010TC HY57V644020TC HY57V654010TC HY57V654020TC Y57V64401IT HY57V644/125/100 HY57V161610TC PDF

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 HY57V161610 400k5
    Text: 16Mbit Synchronous DRAM Series -HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		16Mbit HY57V164010, HY57V168010, HY57V161610 512Kbit HY57V164010- HY57V168010- 1SD10-03-NOV96 285ns hy57v168010a hy57v168010 HY57V164010 400k5 PDF

    HY57V168

    Abstract: hy57v168010 1sd31 66MHz
    Text: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of


    OCR Scan     		168010C 216-bits 576x8. 57V168010C 400mil 44pin 047CK 1SD31-11-MAR98 HY57V168 hy57v168010 1sd31 66MHz PDF

    HY57V164010

    Abstract: No abstract text available
    Text: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of


    OCR Scan     		164010D HY57V164010D 216-bits 152x4. 400mil 44pin 40-10-M HY57V164010 PDF

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B PDF

    hy57v168010a

    Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
    Text: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.


    OCR Scan     		16M-bit 1Mx16-bit Y57V164010A HY57V168010A HY57V161610A 7V651610 HY57V651620 HY57V644021 HY57V654021 HY57V648021 Y57V HY57V641620 HY57V641621 PDF

    HY57V168010C

    Abstract: No abstract text available
    Text: • HYM7V75A200C F-SERIES “H Y U M D U I Unbuffered 2Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM 7V75A200C is high speed 3.3Volt C M O S Synchronous D R A M module consisting of nine 2Mx8 bit Synchronous D R A M s in 44-pin T SO P II and one 8-pin T S S O P 2K bit E E P R O M on a 168-pin glass-epoxy


    OCR Scan     		HYM7V75A200C 2Mx72 7V75A200C 44-pin 168-pin 33jtF HY57V168010C PDF

    hy57v168010a

    Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
    Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part


    OCR Scan     		16M-bit HY57V16401OATC HY57V164010ALTC HY57V16801 HY57V168010ALTC HY57V161610ATC HY57V161610ALTC 64M-bit HY57V644010TC HY57V644020TC hy57v168010a HY57V164010 TSOPII PDF