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    Infineon Technologies AG IGC109T120T6RLX1SA2

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T6RLX1SA)
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    Avnet Americas IGC109T120T6RLX1SA2 Waffle Pack 33
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    IGC109T120T6RL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGC109T120T6RL Infineon Technologies IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC109T120T6RL L7742C, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC109T120T6RL IGC109T120T6 L7742C, PDF