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    Infineon Technologies AG IPD09N03LB-G

    MOSFET N-CH 30V 50A TO252-3
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    IPD09N03LB Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPD09N03LB Infineon Technologies OptiMOS2 - SuperSO8, SO8, DPAK Original PDF
    IPD09N03LB G Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A DPAK Original PDF
    IPD09N03LBG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A DPAK Original PDF
    IPD09N03LBG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF

    IPD09N03LB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    09n03lb

    Abstract: 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 IPD09N03LB PG-TO252-3-11 IPD09N03LBG
    Text: OptiMOS 2 Power-Transistor IPD09N03LB G IPS09N03LB G IPU09N03LB G IPF09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level


    Original
    PDF IPD09N03LB IPU09N03LB IPS09N03LB IPF09N03LB PG-TO252-3-11 PG-TO251-3-11 09n03lb 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 PG-TO252-3-11 IPD09N03LBG

    09N03

    Abstract: S4264 09n03lb IPD09N03LB JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264
    Text: IPD09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    PDF IPD09N03LB PG-TO252-3-11 Q67042-S4264 09N03LB 09N03 S4264 09n03lb JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264

    09N03

    Abstract: 09n03lb 09n03l IPD09N03LB PG-TO252-3-11
    Text: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original
    PDF IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 PG-TO252-3-23 09N03 09n03lb 09n03l PG-TO252-3-11

    Untitled

    Abstract: No abstract text available
    Text: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original
    PDF IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 PG-TO252-3-23

    smd marking D50

    Abstract: No abstract text available
    Text: IPD09N03lB G IPS09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    PDF IPD09N03lB IPS09N03LB PG-TO252-3-11 09N03LB PG-TO251-3-11 smd marking D50

    09N03

    Abstract: 09N03LB IPD09N03LB JESD22 PG-TO252-3-11
    Text: IPD09N03lB G IPS09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    PDF IPD09N03lB IPS09N03LB PG-TO252-3-11 PG-TO251-3-11 09N03LB 09N03 09N03LB JESD22 PG-TO252-3-11

    09n03lb

    Abstract: PG-TO252-3-23
    Text: OptiMOS 2 Power-Transistor IPD09N03LB G IPS09N03LB G IPU09N03LB G IPF09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level


    Original
    PDF IPD09N03LB IPU09N03LB IPS09N03LB IPF09N03LB 09n03lb PG-TO252-3-23

    PG-TO252-3-11

    Abstract: 09n03 PG-TO-252-3-11 IPF09N03LB 09N03L PG-TO252 09n03lb
    Text: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original
    PDF IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 09N03LB 09n03 PG-TO-252-3-11 09N03L PG-TO252 09n03lb

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original
    PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696