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    IRF1010N Price and Stock

    Infineon Technologies AG IRF1010NSTRLPBF

    MOSFET N-CH 55V 85A D2PAK
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    DigiKey IRF1010NSTRLPBF Digi-Reel 1,660 1
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    IRF1010NSTRLPBF Cut Tape 1,660 1
    • 1 $2.49
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    IRF1010NSTRLPBF Reel 800 800
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    Mouser Electronics IRF1010NSTRLPBF 8,420
    • 1 $1.53
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    Verical IRF1010NSTRLPBF 235 10
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    Arrow Electronics IRF1010NSTRLPBF Cut Strips 235 8 Weeks 1
    • 1 $0.7901
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    Newark IRF1010NSTRLPBF Cut Tape 469 1
    • 1 $1.49
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    NexGen Digital IRF1010NSTRLPBF 895
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    Chip 1 Exchange IRF1010NSTRLPBF 24,349
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    EBV Elektronik IRF1010NSTRLPBF 25,600 9 Weeks 800
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    New Advantage Corporation IRF1010NSTRLPBF 12,800 1
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    Win Source Electronics IRF1010NSTRLPBF 25,728
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    Infineon Technologies AG IRF1010NL

    MOSFET N-CH 55V 85A TO262
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    DigiKey IRF1010NL Tube 50
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    • 100 $3.176
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    Win Source Electronics IRF1010NL 13,520
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    Infineon Technologies AG IRF1010NPBF

    MOSFET N-CH 55V 85A TO220AB
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    DigiKey IRF1010NPBF Tube 1,000
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    Avnet Americas IRF1010NPBF Bulk 1
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    Verical IRF1010NPBF 2,000 1,000
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    IRF1010NPBF 994 457
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    IRF1010NPBF 200 24
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    Arrow Electronics IRF1010NPBF 2,700 10 Weeks 1,000
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    Newark IRF1010NPBF Bulk 1
    • 1 $1.75
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    Bristol Electronics IRF1010NPBF 39 4
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    Quest Components IRF1010NPBF 31
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    Rochester Electronics IRF1010NPBF 994 1
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    TME IRF1010NPBF 250 1
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    Chip1Stop IRF1010NPBF Tube 200
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    Win Source Electronics IRF1010NPBF 13,830
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    Infineon Technologies AG IRF1010NSTRR

    MOSFET N-CH 55V 85A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF1010NSTRR Reel 800
    • 1 -
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    • 1000 $2.26625
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    Win Source Electronics IRF1010NSTRR 25,613
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    • 100 $1.074
    • 1000 $0.716
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    Infineon Technologies AG IRF1010NLPBF

    MOSFET N-CH 55V 85A TO262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF1010NLPBF Tube 400
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    Find more IRF1010N price and stock on Findchips.com

    IRF1010N Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF1010N International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010N International Rectifier HEXFET Power Mosfet Original PDF
    IRF1010N International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010N with Standard Packaging Original PDF
    IRF1010N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 55V, 72A, Pkg Style TO-220AB Scan PDF
    IRF1010N Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF1010NL International Rectifier HEXFET Power Mosfet Original PDF
    IRF1010NL International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010NL with Standard Packaging Original PDF
    IRF1010NL International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010NL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010NL Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF1010NLPBF International Rectifier Transistor Mosfet N-CH 55V 85A 3TO-262 Original PDF
    IRF1010NLPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010NL with Lead Free Packaging Original PDF
    IRF1010NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010N with Lead-Free Packaging. Original PDF
    IRF1010NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF1010NS International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1010NS with Standard Packaging Original PDF
    IRF1010NS International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010NS International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010NS International Rectifier HEXFET Power MOSFET Original PDF

    IRF1010N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-994

    Abstract: IRF1010N IRF1010NS IRF530S
    Text: Previous Datasheet Index Next Data Sheet PD 9.1372 IRF1010NS PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω


    Original     		PDF IRF1010NS AN-994 IRF1010N IRF1010NS IRF530S

    IRF1010N

    Abstract: IRF1010
    Text: Previous Datasheet Index Next Data Sheet PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description


    Original     		PDF 1278B IRF1010N O-220 IRF1010N IRF1010

    marking code 43a

    Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


    Original     		PDF 91372B IRF1010NS/L IRF1010NS) IRF1010NL) packag10) marking code 43a 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL

    Untitled

    Abstract: No abstract text available
    Text: IRF1010NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL


    Original     		PDF IRF1010NS/LPbF EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: IRF1010NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)


    Original     		PDF IRF1010NPbF O-220AB O-220AB.

    AN-994

    Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


    Original     		PDF 91372B IRF1010NS/L IRF1010NS) IRF1010NL) AN-994 IRF1010N IRF1010NL IRF1010NS to262 pcb footprint

    marking F53

    Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS SS2000
    Text: PD - 9.1372A IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.011Ω G ID = 84A†


    Original     		PDF IRF1010NS/L IRF1010NS) IRF1010NL) marking F53 AN-994 IRF1010N IRF1010NL IRF1010NS SS2000

    Untitled

    Abstract: No abstract text available
    Text: PD - 94966A IRF1010NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 11mΩ G ID = 85A‡ S Description


    Original     		PDF 4966A IRF1010NPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!


    Original     		PDF IRF1010NSPbF IRF1010NLPbF EIA-418.

    marking 43a

    Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS
    Text: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from


    Original     		PDF IRF1010NS IRF1010NL marking 43a AN-994 IRF1010N IRF1010NL IRF1010NS

    Untitled

    Abstract: No abstract text available
    Text: IRF1010N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)68# I(DM) Max. (A) Pulsed I(D)48 @Temp (øC)100# IDM Max (@25øC Amb)270# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)115# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF1010N

    IRF1010N

    Abstract: 43A MARKING CODE marking code 43a IRF1010
    Text: PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description Fifth Generation HEXFETs from International Rectifier utilize advanced


    Original     		PDF 1278B IRF1010N O-220 IRF1010N 43A MARKING CODE marking code 43a IRF1010

    marking 43a

    Abstract: IRF1010NL AN-994 IRF1010N IRF1010NS
    Text: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from


    Original     		PDF IRF1010NS IRF1010NL marking 43a IRF1010NL AN-994 IRF1010N IRF1010NS

    DIODE S 43a

    Abstract: AN-994 IRF1010N
    Text: IRF1010NS/IRF1010NL Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance


    Original     		PDF IRF1010NS/IRF1010NL DIODE S 43a AN-994 IRF1010N

    IRF1010N

    Abstract: No abstract text available
    Text: PD - 9.1278C IRF1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.011Ω G ID = 84A… S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1278C IRF1010N O-220 IRF1010N

    Untitled

    Abstract: No abstract text available
    Text: IRF1010NS IRF1010NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D 2 P ak T O -26 2 IRF1010NL IRF1010NS Description The D2Pak is a surface mount power package capable of


    Original     		PDF IRF1010NS IRF1010NL IRF1010NL)

    Untitled

    Abstract: No abstract text available
    Text: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from


    Original     		PDF IRF1010NS IRF1010NL

    Untitled

    Abstract: No abstract text available
    Text: PD - 94966 IRF1010NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 11mΩ G ID = 85A‡


    Original     		PDF IRF1010NPbF O-220 all20AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 94966 IRF1010NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 11mΩ G ID = 85A‡


    Original     		PDF IRF1010NPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1372A International IQ R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF101ONS • Low-profile through-hole(IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF IRF101ONS) IRF101ONL)

    DIODE S 43a

    Abstract: IRF1010N
    Text: PD - 9.1372A nternational I O R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF IRF1010NS) IRF101ONL) IRF1010NS/L DIODE S 43a IRF1010N

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1278C International IO R Rectifier IRF1010N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = Id = 0 011 £1 84A(D Description


    OCR Scan     		PDF 1278C IRF1010N O-220

    f101on

    Abstract: GS 069 LF
    Text: P D -9 1 3 7 2 B International KSR Rectifier IR F 1 0 1 0 N S /L H EXFET Pow er M O S F E T • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF1010NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF IRF1010NS) IRF1010NL) f101on GS 069 LF

    Untitled

    Abstract: No abstract text available
    Text: International [^Rectifier PD 9.1278B IRF1010N PRELIMINARY HEXFET Power M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss - 55V ^ D S o n = 0.012Q lD = 72A


    OCR Scan     		PDF 1278B IRF1010N GQ23B5Q