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    IRF321 Search Results

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    IRF321 Price and Stock

    ITT Interconnect Solutions CIR00F-32A-13P-F80-VO

    Standard Circular Connector
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    Mouser Electronics CIR00F-32A-13P-F80-VO
    • 1 -
    • 10 $176.19
    • 100 $169.87
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    New Jersey Semiconductor Products, Inc. IRF321

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF321 350 1
    • 1 $15
    • 10 $10.125
    • 100 $8.625
    • 1000 $8.625
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    New Jersey Semiconductor Products Inc IRF321

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    Quest Components IRF321 280
    • 1 $20
    • 10 $20
    • 100 $12
    • 1000 $11.5
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    International Rectifier IRF321

    IRF321 - N-Channel HERMETIC MOS HEXFET '
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    Rochester Electronics IRF321 20 1
    • 1 $1.13
    • 10 $1.13
    • 100 $1.06
    • 1000 $0.9605
    • 10000 $0.9605
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    Harris Semiconductor IRF321

    Electronic Component
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    ComSIT USA IRF321 16
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    IRF321 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF321 Intersil 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 ?, N-Channel Power MOSFETs Original PDF
    IRF321 Fairchild Semiconductor N-Channel Power MOSFETs, 3.0 A, 350-400 V Scan PDF
    IRF321 FCI POWER MOSFETs Scan PDF
    IRF321 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF321 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. Scan PDF
    IRF321 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF321 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF321 Motorola European Master Selection Guide 1986 Scan PDF
    IRF321 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF321 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF321 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF321 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF321 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF321 Unknown FET Data Book Scan PDF
    IRF321 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF
    IRF321 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

    IRF321 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF321 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)3.3 I(DM) Max. (A) Pulsed I(D)2.1 @Temp (øC)100 IDM Max (@25øC Amb)13 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-55õ


    Original
    PDF IRF321

    ifr320

    Abstract: No abstract text available
    Text: IRF320, IRF321 IRF322, IRF323 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    Original
    PDF IRF320, IRF321 IRF322, IRF323 TA17404. ifr320

    ifr320

    Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202
    Text: IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    PDF IRF320, IRF321, IRF322, IRF323 ifr320 IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    IFR320

    Abstract: No abstract text available
    Text: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF320, IRF321, IRF322, IRF323 RF322, IFR320

    SFN402B3

    Abstract: IRF321 HP-214A
    Text: f i 11—i • 8 3 6 8 6 0 2 SO L IT R O N D E V IC E S , , . 11. IN C b l DE | _ fl3 h ô b O E DD 0D 31S □ | Dr T-3 9 -1 1 _ S o ls f r o h SFN _ DEVICES, INC. POWER IV30S DEVICE 350V/3A N Channel, TO-3 Package, IRF321 Equivalent The


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    PDF T-39-11 SFN402B3 IV30S 50V/3A) IRF321 hp214a s0j1f/450v SFN402B3 HP-214A

    IFR320

    Abstract: IRF322 IRF320
    Text: IRF320, IRF321 IRF322, IRF323 HARRIS S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V • High Input Im pedance These are N-Channel enhancement mode silicon gate


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    PDF IRF320, IRF321 IRF322, IRF323 TA17404. IRF321, RF322, IFR320 IRF322 IRF320

    IRF322

    Abstract: IRF320 250M IRF321 IRF323
    Text: Standard Power MOSFETs- IRF320, IRF321, IRF322, IRF323 File Number 1569 Power MOS Field-Effect Transistors N-CHANNEL EN HANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.5A and 3.0A, 350V-400V


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    PDF IRF320, IRF321, IRF322, IRF323 50V-400V IRF322 IRF323 75BVQSS IRF320 250M IRF321

    9314h

    Abstract: International Rectifier MOSFET 443 K 3911 1RF322
    Text: HE 0 I Mfl5SMS2 QOQTlEâ 1 | Data She£t No. PO-9.314H T - ¿ 7 -^ INTERNATIONAL RECTIFIER INTERNATIONAL- RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED' IR F320 HEXFET TRANSISTORS IRF321 1RF322 IRF323 N-CHANNEL Product Summary 400 Volt, 1.8 Ohm HEXFET


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    PDF IRF321 1RF322 IRF323 T0-204AA G-111 IRF320, IRF321, IRF322, IRF323 T-39-11 9314h International Rectifier MOSFET 443 K 3911

    IRF320

    Abstract: No abstract text available
    Text: IRF320, IRF321 IRF322, IRF323 33 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Package F e a tu re s T O -2 0 4 A A • 2.8A and 3.3A , 3 5 0 V - 4 0 0V BOTTOM VIEW • r D S o n = 1 - 8 f î a n d 2 .5 C I • S O A is P o w er-D issip atio n Lim ited


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    PDF IRF320, IRF322, IRF323 IRF320

    IRF449

    Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
    Text: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


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    PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF449 irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441

    DATA SHEET IRF331

    Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
    Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I ' < O Ò ' ' ' lO ' ' ' ' ' I o o r i mm | ioom m I I j j CO 00 CO CO j j ' L -^ ^ l I I c\i CM i


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    PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D DATA SHEET IRF331 IRF540 IRF44 VN2410M IVN6200CNH

    irf840

    Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
    Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j


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    PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf840 equivalent irf840 irf840 equivalent irf840 rf MTM3N55

    1RF321

    Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


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    PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 1RF321 IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452

    irf150

    Abstract: VN64GA 2SK134 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223
    Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPW R-6501 H P W R -6502 H P W R -6503 H P W R -6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 T O -3 T O -3 T O -3 T O -3 100 120


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    PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf150 VN64GA 2SK134 2SK133 IRF223

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    5109d

    Abstract: No abstract text available
    Text: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    PDF 000510e IRF320/321/322/323 IRF321 IRF322 IRF323 00GS435 5109d

    BUZ24

    Abstract: IRF540 2sk135 equivalent 2SJ49 2SJ54 HPWR 6501 2SK132 2SK133 VN67AF HPWR-6503
    Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160


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    PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 BUZ24 IRF540 2sk135 equivalent 2SJ49 2SJ54 HPWR 6501 2SK133 VN67AF

    MTM2N85

    Abstract: IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D VN0801D
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o P fi c | I O O I I I P I I I | I I j j CO00 COCO j j ' I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i


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    PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D MTM2N85 IVN6200CNH IVN6200CNM

    irf420

    Abstract: IRF823 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


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    PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 irf420 IRF823 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A

    irf 111

    Abstract: IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


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    PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 irf 111 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A

    IRF452

    Abstract: IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 VN5001A VN5002A
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


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    PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 IRF452 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 VN5001A VN5002A

    1rf830

    Abstract: ibf830 IRF8301 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


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    PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 1rf830 ibf830 IRF8301 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450

    STM820

    Abstract: STM-430 STM-741 STM-820 STM422 stm360 STM322 STM3600 STM431 STM-841
    Text: SEMICONDUCTOR TECHNOLOGY OSE T> SEMICONDUCTOR TECHNOLOGY, INC. fll3bM50 D00D231 1 T- 3^-01 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 HIGH VOLTAGE MOS POWER FIELD EFFECT TRANSISTORS (N-CHANNEL) STI Type


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    PDF STM-321 IRF321 STM-322 IRF322 STM-323 IRF323 O-220 STM-830 IRF830 STM820 STM-430 STM-741 STM-820 STM422 stm360 STM322 STM3600 STM431 STM-841