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    Infineon Technologies AG IRF530NS

    MOSFET N-CH 100V 17A D2PAK
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    DigiKey IRF530NS Tube 50
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    Infineon Technologies AG IRF530NL

    MOSFET N-CH 100V 17A TO262
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    NXP Semiconductors IRF530N,127

    MOSFET N-CH 100V 17A TO220AB
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    Vyrian IRF530N,127 1,630
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    Infineon Technologies AG IRF530NSPBF

    MOSFET N-CH 100V 17A D2PAK
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    Velocity Electronics IRF530NSPBF 400
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    EBV Elektronik IRF530NSPBF 143 Weeks 50
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    onsemi IRF530N_R4942

    MOSFET N-CH 100V 22A TO220-3
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    DigiKey IRF530N_R4942 Tube 800
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    Find more IRF530N price and stock on Findchips.com

    IRF530N Datasheets (40)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    IRF530N International Rectifier HEXFET Power MOSFET Original PDF
    IRF530N International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF530N with Standard Packaging Original PDF
    IRF530N International Rectifier Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A) Original PDF
    IRF530N International Rectifier HEXFET Power MOSFET Original PDF
    IRF530N Intersil 22A, 100V, 0.064 ?, N-Channel Power MOSFET Original PDF
    IRF530N Philips Semiconductors N-Channel TrenchMOS Transistor Original PDF
    IRF530N STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    IRF530N STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRF530N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF530N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 100V, 15A, Pkg Style TO-220AB Scan PDF
    IRF530N Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF530N,127 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 17A TO220AB Original PDF
    IRF530ND General Semiconductor N-Channel Enhancement-Mode MOSFET DIE Original PDF
    IRF530NL International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF530NL with Standard Packaging Original PDF
    IRF530NL International Rectifier HEXFET Power MOSFET Original PDF
    IRF530NL International Rectifier HEXFET Power Mosfet Original PDF
    IRF530NL Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF530NLPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF530NL with Lead Free Packaging Original PDF
    IRF530NLPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original PDF
    IRF530NPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF

    IRF530N Datasheets Context Search

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    AN-994

    Abstract: IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator
    Text: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description


    Original     		91352B IRF530NS IRF530NL EIA-418. AN-994 IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator PDF

    IRF530N

    Abstract: 4.5v to 100v input regulator
    Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International


    Original     		IRF530N O-220 O-220AB IRF530N 4.5v to 100v input regulator PDF

    IRF530N

    Abstract: AN7254 AN7260 AN9321 AN9322 TB334
    Text: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		IRF530N O-220AB IRF530N AN7254 AN7260 AN9321 AN9322 TB334 PDF

    IRF530N

    Abstract: 4.5V TO 100V INPUT REGULATOR
    Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International


    Original     		IRF530N O-220 IRF530N 4.5V TO 100V INPUT REGULATOR PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì


    OCR Scan     		IRF530NS) IRF530NL) PD-91352A IRF530NS/L PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF530NS IRF530NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description D2Pak IRF530NS The D2Pak is a surface mount power package capable of accommodating


    Original     		IRF530NS IRF530NL IRF530NL) EIA-418. PDF

    IRF530N

    Abstract: IRF530N applications
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ


    Original     		IRF530N O220AB) IRF530N IRF530N applications PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94962 IRF530NPbF HEXFETÆ Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 90m" G ID = 17A S Description


    Original     		IRF530NPbF O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95100 IRF530NSPbF IRF530NLPbF Æ HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90m"


    Original     		IRF530NSPbF IRF530NLPbF EIA-418. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description


    Original     		91352B IRF530NS IRF530NL EIA-418. PDF

    IRF530N

    Abstract: IRF530ND
    Text: IRF530ND N-Channel Enhancement-Mode MOSFET DIE TM Chip Geometry T E F N E G VDS 100V RDS ON 0.11Ω ID 17A ct u d ro P New D Source Gate G Physical Characteristics • Die size : 3890 X 1880 µm (153.1 X 74.0 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag


    Original     		IRF530ND IRF530N IRF530ND PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF530NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)


    Original     		IRF530NPbF O-220AB O-220AB. PDF

    AN-994

    Abstract: IRF530N IRF530NL IRF530NS
    Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-149-37 IRF530NS HEXFET D2Pak PD - 91352A IRF530NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology


    Original     		IRF530NS 1352A IRF530NS/L IRF530NS) IRF530NL) AN-994 IRF530N IRF530NL PDF

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent PDF

    IRF530N

    Abstract: MOSFET IRF530n
    Text: IRF530N N-Channel Enhancement-Mode MOSFET VDS 100V RDS ON 0.11Ω ID 17A TM T E F N GE TO-220AB 0.415 (10.54) MAX. 0.185 (4.70) 0.370 (9.40) 0.360 (9.14) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) DIA. t c u rod P New 0.055 (1.39) 0.045 (1.14) G 0.113 (2.87)


    Original     		IRF530N O-220AB IRF530N MOSFET IRF530n PDF

    4.5v to 100v input regulator

    Abstract: No abstract text available
    Text: PD - 94962 IRF530NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description


    Original     		IRF530NPbF O-220 O-220AB 4.5v to 100v input regulator PDF

    IRF530N applications

    Abstract: AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator
    Text: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ


    Original     		IRF530NSPbF IRF530NLPbF EIA-418. IRF530N applications AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator PDF

    AN-994

    Abstract: IRF530N IRF530NL IRL3103L
    Text: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ


    Original     		IRF530NSPbF IRF530NLPbF EIA-418. AN-994 IRF530N IRF530NL IRL3103L PDF

    IRF530N

    Abstract: MOSFET IRF530n
    Text: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		1351A IRF530N O-220 IRF1010 IRF530N MOSFET IRF530n PDF

    IRF530N

    Abstract: IRF530N applications IRF1010 irf1010 applications
    Text: PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description Fifth Generation HEXFETs from International Rectifier


    Original     		IRF530N O-220 IRF1010 IRF530N IRF530N applications IRF1010 irf1010 applications PDF

    IRF530NS

    Abstract: IRF530N IRF530NL AN-994
    Text: PD - 91352A IRF530NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V RDS(on) = 0.11Ω G ID = 17A S


    Original     		1352A IRF530NS/L IRF530NS) IRF530NL) IRF530NS IRF530N IRF530NL AN-994 PDF

    IRF530N

    Abstract: No abstract text available
    Text: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		1351A IRF530N O-220 IRF530N PDF

    IRF530NS

    Abstract: 7A, 100v fast recovery diode AN-994 IRF530N IRF530NL IRF530S 4.5v to 100v input regulator
    Text: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description


    Original     		91352B IRF530NS IRF530NL EIA-418. IRF530NS 7A, 100v fast recovery diode AN-994 IRF530N IRF530NL IRF530S 4.5v to 100v input regulator PDF

    IRF530N

    Abstract: MOSFET IRF530n
    Text: IRF530N N-Channel Enhancement-Mode MOSFET VDS 100V RDS ON 0.11Ω ID 17A TM T E F N GE TO-220AB 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) G 0.145 (3.68) 0.135 (3.43) D 0.410 (10.41) 0.390 (9.91) G PIN D D 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) Dia.


    Original     		IRF530N O-220AB IRF530N MOSFET IRF530n PDF