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    IRFD222 Search Results

    IRFD222 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD222 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD222 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD222 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD222 Motorola 1 Watt TMOS FETs Scan PDF
    IRFD222 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD222 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD222 Unknown FET Data Book Scan PDF
    IRFD222 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD222(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD222R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD222R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD222R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD222 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFD220

    Abstract: No abstract text available
    Text: IRFD220, IRFD221, IRFD222, IRFD223 S E M I C O N D U C T O R 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    IRFD220, IRFD221, IRFD222, IRFD223 TA09600. IRFD220 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    IRFD220

    Abstract: Transistors c-3229 C 3229 IRFD221 D220 IRFD222 IRFD223
    Text: - Standard Power MOSFETs File Number IRFD220, IRFD221, IRFD222, IRFD223 23117 Power MOS Field-Effect Transistors N -C H A N N EL ENHAN C EM EN T MODE


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    IRFD220, IRFD221, IRFD222, IRFD223 92CS-3374I IIRFD221, IRFD223 IRFD220 Transistors c-3229 C 3229 IRFD221 D220 IRFD222 PDF

    Untitled

    Abstract: No abstract text available
    Text: h a r ^ IRFD220, IRFD221, IRFD222, IRFD223 s s e m i c o n d u c t o r 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    IRFD220, IRFD221, IRFD222, IRFD223 PDF

    fd220

    Abstract: IRFD221
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IR FD 220 IRFD221 IRFD222 IR FD 223 Advance Inform ation S m all-S ig nal T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS on = 0 8 0 H M 200 VOLTS


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    IRFF112, IRFF113 IRFF110 fd220 IRFD221 PDF

    mosfet k 2038

    Abstract: IRFD222R 250M IRFD220R IRFD221R IRFD223R
    Text: Rugged Power M O S F E T s_ File Num ber 2038 IRFD220R, IRFD221R, IRFD222R, IRFD223R Avalanche Energy Rated N-Channel Power MOSFETs 0.8A a n d 0.7A, 1 5 0 V -2 0 0 V ros on = 0.8fi a n d 1 .2 0 N -C H A N N E L E N H A N C E M E N T M O D E


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    IRFD220R, IRFD221R, IRFD222R, IRFD223R 50V-200V IRFD222R IRFD223R mosfet k 2038 250M IRFD220R IRFD221R PDF

    irfd220

    Abstract: TA09600
    Text: h a IRFD220, IRFD221, IRFD222, IRFD223 r r i s ” “ ICONDUCTOE 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    IRFD220, IRFD221, IRFD222, IRFD223 TA09600223 irfd220 TA09600 PDF

    IRFD222

    Abstract: IRFD223
    Text: FIT FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRFID222,223 0.7 AMPERES 200,150 VOLTS


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    00A//ys, IRFD222 IRFD223 PDF

    1rfz44

    Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
    Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)


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    IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5TO-220 IRL510 1rfz44 MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022 PDF

    diode 222r

    Abstract: MOSFET 4407 a circuit 4407
    Text: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*


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    IRFD220R/221R/222R/223R diode 222r MOSFET 4407 a circuit 4407 PDF

    mfe9200

    Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
    Text: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0


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    1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 mfe9200 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 PDF

    IRFD221

    Abstract: 3203 MOSFET
    Text: MOTOROLA SC ÍXSTRS/R F} Tfl 6367254, M O T O R O L A SC XSTRS/R F öF|fc,3t7aSL( 0003202 ; . 980 63282 D IRFD220-223 T ' 3 5 ~S lS ELECTRICAL CHARACTERISTICS — C o n tin u e d (Tc - 25°C unless otherwise noted) Characteristic Symbol Min Typ Max U nit


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    IRFD220-223 IRFD220, IRFD221 IRFF110 IRFF113 IRFF113 3203 MOSFET PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    IRF8C30

    Abstract: MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAF50 IRFAF52 IRFAG50 IRFBC32
    Text: 257 - f M « tt fi ± £ Vd s or € t h fë Ta=25t3 Vg s * /CH Vd g (V) Id (V) (A) m m 1GSS Pt> V g s th) 1DSS (nA) (W) (MA) Vd s (V) (V) (V) '14 (Ta=25°C) Ciss Vd s = Vg s * /CH Vg s (V) ft Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ


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    IRFAF50 O-204AA IRFAF52 1RFAG40 RFZ42 O-220AB IRFZ44 MFE910 IRF8C30 MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAG50 IRFBC32 PDF

    IRFD220

    Abstract: 1RFD220 IRF022 IRFD221 IRFD222 IRFD223 F14E diode. f-14e
    Text: MOTOROLA SC X S T R S /R F IM E D I b3b?aS4 G G Ö ci ? 2 3 fl | MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA IR F D 2 2 0 IRFD221 IR F D 2 2 2 IR F D 2 2 3 Advance Information S m a ll-S ig n a l T M O S Field E ffe c t T ra n sisto rs N -Ch ann el Enh an cem en t-M ode


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    IRFD220 IRFD221 IRFD222 IRFD223 PERY145M, 1RFD220 IRF022 IRFD223 F14E diode. f-14e PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 PDF

    1RFD123

    Abstract: 1rfz42 MFE9200 IRF022 IRFZ30 D121 IRFD120 IRFD122 IRFD210 IRFD212
    Text: - 276 - f m * M € tt € Vd s or + Vd g % V «e % £ té {Ta=25°C) Vg s Id (V) 1GSS Pd * /CH (A) V g s th) 1DSS CnA) m Vg s (V) ( M A) Vd s (V) fë £ (Ta=25'C) Id (oîi) Id (mA) Ciss Coss Crss (*typ) (*typ) (max) (pF) (max) (pF) (*typ) (max) (pF) ft


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    IRFD120 CASE370-01 IRFD122 25RFZ42 O-220AB IRFZ44 MFE910 O-205AD 1RFD123 1rfz42 MFE9200 IRF022 IRFZ30 D121 IRFD210 IRFD212 PDF

    MPF256

    Abstract: IRFD220 IRFD221 IRFD222 IRFD223 1RFD220-223 C96d 1RFD220 diode T35 -4-D6
    Text: MOTOROLA SC ÌXSTRS/R 6367254 DET|h3b?5S4 OQöSbflT 0 F> MOTOROLA SC XSTRS/R 96D F 82689 D r - z ? -'¿s' MPF256 CA SE 29-04, STYLE 5 TO-92 (TO-226AA) M A X IM U M R A T IN G S S ym bol Value U nit Drain-Source Voltage Vd S ±30 Vdc Drain-Gate Voltage Vd G


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    Lj3b7E54 MPF256 O-226AA) 0j7l010l MPF256 IRFD220 IRFD221 IRFD222 IRFD223 1RFD220-223 C96d 1RFD220 diode T35 -4-D6 PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


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    1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0054110 3^fl ■ HAS IRFD220/221/222/223 IRFD220R/221R/222R/223R 2 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4-P IN DIP • 0.7 A and 0.8A , 150V - 2 0 0V TOP VIEW • ro s o n ) = 0 .8 fl and 1.2f2 • Single Pulse A valanche Energy R ated*


    OCR Scan
    IRFD220/221/222/223 IRFD220R/221R/222R/223R s4-406 OOS4114 IRFD220, RFD222, IRFD223 RFD220R. IRFD221R, IRFD222R, PDF

    1RFP250

    Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241
    Text: T H O M SO N/ D I S T R I B U T O R SflE D • =¡021,073 0 0 05 70 b ZIE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued Package Maximum Ratings b v DSS (V) ■d s (A) rDS(ON) OHMS 150 4 4.50 5 5.5 1.20 8 9 16 18 25 30 200 0.25 0.32


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    000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241 PDF