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IRFF31 Price and Stock

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New Jersey Semiconductor Products, Inc. IRFF310
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF310		5,052		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
New Jersey Semiconductor Products, Inc. IRFF312
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF312		3,663		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
Vishay Siliconix IRFF313
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF313		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRFF313		3,352			1 $2.325 10 $2.325 100 $2.325 1000 $0.9765 10000 $0.9765	Buy Now
New Jersey Semiconductor Products, Inc. IRFF313
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF313		350		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
International Rectifier IRFF310
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF310		8			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRFF310		5			1 $30.74 10 $30.74 100 $30.74 1000 $30.74 10000 $30.74	Buy Now
ComSIT USA	IRFF310		57			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more IRFF31 price and stock on Findchips.com

IRFF31 Datasheets (58)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFF310	International Rectifier	HEXFET Transistor	Original	PDF
IRFF310	Intersil	1.35A, 400V, 3.600 ?, N-Channel Power MOSFET	Original	PDF
IRFF310	Semelab	N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package	Original	PDF
IRFF310	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFF310	General Electric	Power MOSFET field effect power transistor. Drain-source voltage 400 V.	Scan	PDF
IRFF310	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF310	International Rectifier	TO-39 Package N-Channel HEXFET	Scan	PDF
IRFF310	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRFF310	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF
IRFF310	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF310	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF310	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFF310	Unknown	FET Data Book	Scan	PDF
IRFF310	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRFF310	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF
IRFF310R	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF310R	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF
IRFF310R	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFF311	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFF311	General Electric	Power MOSFET field effect power transistor. Drain-source voltage 350 V.	Scan	PDF

IRFF31 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A  The HEXFET technology is the key to International	Original	PDF	90425C IRFF310 JANTX2N6786 JANTXV2N6786 MIL-PRF-19500/556 O-205AF)
Untitled Abstract: No abstract text available Text: IRFF311 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)1.35# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)5.5# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-55õ	Original	PDF	IRFF311
Untitled Abstract: No abstract text available Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFF310 Feafares 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,	Original	PDF	IRFF310
IRFF310 Abstract: No abstract text available Text: IRFF310 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	PDF	IRFF310 O205AF) 11-Oct-02 IRFF310
Untitled Abstract: No abstract text available Text: IRFF310 Data Sheet Title FF3 bt 35A 00V, 00 m, an- 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRFF310 TB334
Untitled Abstract: No abstract text available Text: IRFF312 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)1.15# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.5# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-55õ	Original	PDF	IRFF312
Untitled Abstract: No abstract text available Text: IRFF310 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)1.25 I(DM) Max. (A) Pulsed I(D)800m @Temp (øC)100# IDM Max (@25øC Amb)5.5 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-55	Original	PDF	IRFF310
IRFF310 Abstract: TB334 Text: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRFF310 IRFF310 TB334
IRFF310 Abstract: JANTX2N6786 JANTXV2N6786 Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A  The HEXFET technology is the key to International	Original	PDF	90425C IRFF310 JANTX2N6786 JANTXV2N6786 MIL-PRF-19500/556 O-205AF) IRFF310 JANTX2N6786 JANTXV2N6786
IRFF310 Abstract: TB334 Text: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	Original	PDF	IRFF310 TB334 TA17444. IRFF310 TB334
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	PDF	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
CMF65-5.556K Abstract: No abstract text available Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,	Original	PDF	MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K
IC LM 364 pn Abstract: G359 A/M29F002BT(45/55/70/90/IC LM 364 pn Text: HE 0 I 4055455 000^302 4 \| T - S INTERNATIONAL R E C T I F I E R 7 IÖR IN T E R N A T IO N A L R E C T IF IE R HEXFET f - c Data Sheet No. PD-9.355E TRANSISTORS IRFF31 O IRFF311 N-CHANNEL POWER MOSFETs TÜ-39 PACKAGE IRFF31 2 IRFF313 Features: 400 Volt, 3.6 Ohm HEXFET	OCR Scan	PDF	IRFF31 IRFF311 IRFF313 G-364 IC LM 364 pn G359 A/M29F002BT(45/55/70/90/IC LM 364 pn
SMM70N05 Abstract: irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800 Text: - H f M tt % ± Vd s or € $ Vg s Vd g V 1R F F 310 IRFF311 IRFF312 IRFF313 1RFF320 IRFF321 IRFF322 IRFF323 IRFF330 IRFF331 IRFF332 IRFF333 IR FF420 IRFF421 IRFF422 IRFF423 IR F M 3 0 IRFF431 IRFF432 IR FF433 IR F F 9 1 10 1R F F 9 1 11 1R F F 9 112 IR FF9113	OCR Scan	PDF	IRFF310 O-205AF FF312 FF322 FF323 2520P10 SMM60N05 T0-204AE SMM70N05 irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800

DM 311 BH Abstract: BB 313 T-2V07 IRFF310 IRFF312 irf 313 Text: SILICONIX INC lflE D f T Silicon îx J-W incorporated • ÔE54735 0014013 7 ■ IRFF310/311/312/313 N-Channel Enhancement Mode Transistors T -2 °l-0 7 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR\|DSS IRFF310 400 3.6 1.35 IRFF311 350 3.6 1.35 IRFF312	OCR Scan	PDF	S5473S 1RFF310/311/312/313 T-2V07 O-205AF IRFF310 IRFF311 IRFF312 IRFF313 rff31i DM 311 BH BB 313 irf 313
irf310 Abstract: irf 3280 IRFF311 IRFF310 IRFF312 IRFF313 Text: -Standard Power MOSFETs File Number 1888 IRFF310, IRFF311, IRFF312, IRFF313 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	PDF	IRFF310, IRFF311, IRFF312, IRFF313 92CS-33741 IRFF313 FF312 irf310 irf 3280 IRFF311 IRFF310 IRFF312
SMM70N06 Abstract: SMM70N05 SMP2P20 SMM60N05 SILICONIX 4800 SMM11P20 IBFF333 IRFF313 SMD10P05L IRFF320 Text: - 324 - f ft A £ Ta=25‘C Vds Vg s or * Vd g Id t M € ± € IRFF312 IRFF313 IRFF320 IRFF321 IRFF322 IRFF323 IRFF33Q IRFF331 IRFF332 IRFF333 IRFF430 IRFF431 IRFF432 IRFF433 MOD1QOA/B/C MOD200A/B/C MQD400A/B/C MOD5QOA/B/C SMD10P05 SMD10P05L SMD15NQ5	OCR Scan	PDF	IRFF31Z IRFF313 IRFF320 2020P10 SMM60N05 T0-204AE SMM70N05 O-204AE SMM70N06 SMM70N10 SMP2P20 SILICONIX 4800 SMM11P20 IBFF333 SMD10P05L
IRFF312R Abstract: IRFF311R IRFF310R IRFF313R Text: _ File N u m b er 2032 RuggedPowerMO IRFF310R, IRFF311R, IRFF312R, IRFF313R Avalanche Energy Rated N-Channel Power MOSFETs 1.35A and 1.15A, 350V-400V r0s on = 3.60 and 5.00 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated	OCR Scan	PDF	IRFF310R, IRFF311R, IRFF312R, IRFF313R 50V-400V 2CS-42SH IRFF312R IRFF313R IRFF311R IRFF310R
IRFF312 Abstract: IRFF313 Text: FUT HELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS Rd S ON = 5.0 Í1 Preliminar/ This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	IRFF312 IRFF31 1RFF31 IRFF313
Untitled Abstract: No abstract text available Text: IRFF310, IRFF311, IRFF312, IRFF313 HARRIS S E M I C O N D U C T O R 1.35A and 1.15A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Description Features 1.35A and 1.15A, 350V and 400V rDS ON = These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFF310, IRFF311, IRFF312, IRFF313 TA17444. RFF313
IRFF312 Abstract: IRFF313 Text: Z t SO LID STATÉ bflc D I 3075001 □□□AT75 4 T-35-JS IT d IRFF312.313 \P\ 1.15 AMPERES 400,350 VOLTS Resechi = 5.0 ft FIELD EFFECT POWER TRANSISTOR Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology	OCR Scan	PDF	IRFF312 IRFF313
IRFF310 Abstract: IRFF311 Text: [jagMiìMKS [FIT FIELD EFFECT POWER TRANSISTOR IRFF310,311 1.35 AMPERES 400, 350 VOLTS r DS ON = 3.6 n Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	IRFF310 00A/ais, IRFF311
IRF09120 Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120 Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ	OCR Scan	PDF	IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120
Untitled Abstract: No abstract text available Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical	OCR Scan	PDF

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IRFF31 Search Results

IRFF31 Price and Stock

New Jersey Semiconductor Products, Inc. IRFF310

New Jersey Semiconductor Products, Inc. IRFF312

Vishay Siliconix IRFF313

New Jersey Semiconductor Products, Inc. IRFF313

International Rectifier IRFF310

IRFF31 Datasheets (58)

IRFF31 Datasheets Context Search

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Untitled

Untitled

IRFF310

Untitled

Untitled

Untitled

IRFF310

IRFF310

IRFF310

IRF460

CMF65-5.556K

IC LM 364 pn

SMM70N05

DM 311 BH

irf310

SMM70N06

IRFF312R

IRFF312

Untitled

IRFF312

IRFF310

IRF09120

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