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Rochester Electronics LLC IRFF9122 P-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFF9122	Bulk			245	1 - 10 - 100 - 1000 $1.23 10000 $1.23	Buy Now
New Jersey Semiconductor Products, Inc. IRFF9130
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF9130		15,322		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
New Jersey Semiconductor Products, Inc. IRFF9132
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF9132		14,758		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
New Jersey Semiconductor Products, Inc. IRFF9120
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF9120		8,742		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
New Jersey Semiconductor Products, Inc. IRFF9122
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF9122		2,582		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now

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IRFF91 Datasheets (99)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFF9110	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFF9110	Semelab	P-Channel MOSFET in a Hermetically Sealed TO39 Metal Package	Original	PDF
IRFF9110	International Rectifier	TO-39 / TO66 Package P-Channel HEXFET	Scan	PDF
IRFF9110	International Rectifier	TO-39 / TO-3 N-Channel HEXFET Power MOSFETs	Scan	PDF
IRFF9110	Motorola	European Master Selection Guide 1986	Scan	PDF
IRFF9110	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFF9110	Unknown	FET Data Book	Scan	PDF
IRFF9110	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF9110	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFF9111	International Rectifier	TO-39 / TO66 Package P-Channel HEXFET	Scan	PDF
IRFF9111	International Rectifier	TO-39 / TO-3 N-Channel HEXFET Power MOSFETs	Scan	PDF
IRFF9111	Motorola	European Master Selection Guide 1986	Scan	PDF
IRFF9111	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFF9111	Unknown	FET Data Book	Scan	PDF

IRFF9111	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFF9112	International Rectifier	TO-39 / TO66 Package P-Channel HEXFET	Scan	PDF
IRFF9112	International Rectifier	TO-39 / TO-3 N-Channel HEXFET Power MOSFETs	Scan	PDF
IRFF9112	Motorola	European Master Selection Guide 1986	Scan	PDF
IRFF9112	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFF9112	Unknown	FET Data Book	Scan	PDF

IRFF91 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IRFF9130 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	IRFF9130 -100V, -100V	PDF
IRFF9120 Abstract: No abstract text available Text: IRFF9120 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.	Original	IRFF9120 O205AF) 11-Oct-02 IRFF9120	PDF
Untitled Abstract: No abstract text available Text: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	IRFF9130 2N6849 O-205AF -100V 500mJ O-205AF)	PDF
MOSFET Abstract: 2N6845 Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 864(034) 9 40 (0 37) 801 (0315) 9,01 (0 355)	Original	2N6845 IRFF9120 -100V 300ms, MOSFET 2N6845	PDF
IRFF9130 Abstract: No abstract text available Text: IRFF9130 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.	Original	IRFF9130 O205AF) 11-Oct-02 IRFF9130	PDF
JANTX2N6845 Abstract: diode 50v 40A ir IRFF9120 JANTXV2N6845 Text: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International	Original	90552C IRFF9120 JANTX2N6845 JANTXV2N6845 MIL-PRF-19500/563 O-205AF) -100V paramete252-7105 JANTX2N6845 diode 50v 40A ir IRFF9120 JANTXV2N6845	PDF
Untitled Abstract: No abstract text available Text: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International	Original	90552C IRFF9120 JANTX2N6845 JANTXV2N6845 MIL-PRF-19500/563 O-205AF) -100V	PDF
Untitled Abstract: No abstract text available Text: IRFF9120 Data Sheet Title FF9 0 bt A, 0V, m, an- June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,	Original	IRFF9120	PDF
IRFF9120 Abstract: No abstract text available Text: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.	Original	IRFF9120 TA17501. IRFF9120	PDF
IRFF9110 Abstract: No abstract text available Text: IRFF9110 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.	Original	IRFF9110 O205AF) 11-Oct-02 IRFF9110	PDF
IRFF9110 Abstract: No abstract text available Text: PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.	Original	O-205AF) IRFF9110 -100V switchin252-7105 IRFF9110	PDF
Untitled Abstract: No abstract text available Text: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)	Original	2N6845 IRFF9120 -100V O-205AF) 300ms,	PDF
Untitled Abstract: No abstract text available Text: PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.	Original	O-205AF) IRFF9110 -100V	PDF
IRFF9120 Abstract: 2n6845 TO-205AF Package Text: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)	Original	2N6845 IRFF9120 -100V O-205AF) 300ms, IRFF9120 2n6845 TO-205AF Package	PDF

Untitled Abstract: No abstract text available Text: m Ha r r is IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -3.5 A and -4A , -8 0 V and -1 0 0 V • rDS ON = 0 .6 0 0 and 0 .8 0 0 GATE SOURCE • Single Pulse Avalanche Energy Rated	OCR Scan	IRFF9120, IRFF9121 IRFF9122, IRFF9123 IRFF9121, IRFF9122 IRFF9123	PDF
IRFF9131 Abstract: IRFF9133 IRFF9130 IRFF9132 transistors c 2216 Text: Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 F ile N u m b e r 2216 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ibs on = 0.30Q and 0.400 TERMINAL DIAGRAM □ Features: • S in g le p u ls e a va la n ch e e n e rg y ra te d	OCR Scan	IRFF9130, IRFF9131 IRFF9132, IRFF9133 -100V 92CS-43296 IRFF9131, IRFF9132 IRFF9133 IRFF9130 transistors c 2216	PDF
Untitled Abstract: No abstract text available Text: H a r r IRFF9130, IRFF9131, IRFF9132, IRFF9133 i s s e m i c o n d u c t o r -5.5A and -6.5A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -5.5A and-6.5A ,-80V and-100V These are P-Channel enhancement mode silicon gate	OCR Scan	IRFF9130, IRFF9131, IRFF9132, IRFF9133 -100V, and-100V	PDF
IRF024 Abstract: IRF034 IRF045 IRFF9030 IRFF9010 IRFF9020 IRFF9111 IRFF9112 IRFF9113 IRFF9121 Text: INTERNATIONAL RECTIFIER BbE D MflSSMSa GDiaOTti ê International is ] R ectifier H EXFET Hermetic Package r - 3 c?~/'3 TO-39 N-Channel Part Number V q s Drain Source Voltage Volts IRFF9010 IRFF9020 IRFF9030 -50 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133	OCR Scan	IRFF9010 TQ-205AF IRFF9020 IRFF9030 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 IRF024 IRF034 IRF045 IRFF9030 IRFF9020 IRFF9111 IRFF9112 IRFF9121	PDF
2N6844 Abstract: 2N6846 2N6848 T30 rectifier 2N6850 T0-213AA IRFF9010 IRFF9012 IRFF9020 IRFF9022 Text: HERMETIC PACKAGE HEXFETs — INTERNATIONAL RECTIFIER SbE D • INTERNATIONAL. RECTIFIER 4ÛSS4S2 DOlOSbO 7 ■ ll&R T-3 ^ - 0 3 ~ TO-39 Package P-CHANNEL Types IRFF9030 IRFF9032* IRFF9020“ IRFF9022* IRFF9010* IRFF9012* IRFF9131 IRFF9133 2N6848 IRFF9121	OCR Scan	5S452 IRFF9030* T0-205AF IRFF9032* IRFF9020" IRFF9022* IRFF9010* IRFF9012* IRFF9131 IRFF9133 2N6844 2N6846 2N6848 T30 rectifier 2N6850 T0-213AA IRFF9010 IRFF9012 IRFF9020 IRFF9022	PDF
IRF024 Abstract: 2N6845 IRF035 33MIL Text: International Í^ R ÍF W 4 Íf¡ÖT HEXFFT n C A rC I ^ r ie u m ie r un Power MOSFETs Hermetic Package TO-39 N-Channel Part Number Vos Drain Source Voltage Volts IRFF9010 IRFF9020 IRFF9030 -50 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 -80	OCR Scan	IRFF9010 IRFF9020 IRFF9030 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 IRFF9112 IRF024 2N6845 IRF035 33MIL	PDF
rectifier diode 1-35 LA V6 Abstract: IRFF9120 IRFF9122 IRFF9123 IRFF9121 2CS-432T Text: Rugged Power MOSFETs File N u m b e r 2287 IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -3.5 A and -4 A, -60 V, -100 V fDS on = 0.60 Q and 0.80 O TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated	OCR Scan	IRFF9120, IRFF9121 IRFF9122, IRFF9123 IRFF9121, IRFF9122 IRFF9123 92CS-43276 2CS-432TÂ rectifier diode 1-35 LA V6 IRFF9120 IRFF9121 2CS-432T	PDF
9131 Abstract: IRFF9131 1RFF9130 IRFF9130 3919 L 9132 k 3919 IRFF9132 IRFF9133 LAE 0132 Text: SILICONIX INC 18E D • ÔSSH73S 0 0 1 4 9 3 7 T ■ IRFF9130/9131 /9132/9133 C X 'S i f l c c T n l x J u w incorporated P-Channel Enhancement Mode Transistors T -3 BOTTOM VIEW. PRODUCT SUMMARY PART NUMBER V BR\|DSS IRFF9130 " g p Id (A -100 0.30 -6.5 IRFF9131	OCR Scan	IRFF9130/9131 O-205AF IRFF9130 IRFF9131 IRFF9132 IRFF9133 9131 1RFF9130 3919 L 9132 k 3919 LAE 0132	PDF
tc 9123 Abstract: IC 9122 IRFF9121 IRFF9122 IRFF9120 IRFF9123 9121 Text: SILICONIX INC IflE I> f Ô254735 D014Ô33 2 U IRFF9120/9121 /9122/9123 « y S ilìc o n ix J M • in c o r p o ra te d P-Channel Enhancement Mode Transistors " T - l 0! - ! 0 ! TQ-205AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS IRFF9120 •d ,Dg r	OCR Scan	IRFF9120/9121/9122/9123 IRFF9120 IRFF9121 IRFF9122 IRFF9123 O-205AF tc 9123 IC 9122 9121	PDF
MFE9200 Abstract: BS107 MOTOROLA BS170 MOTOROLA MPF4150 IRFF9110 IRFF9111 IRFF9112 IRFF9113 IRFF9120 IRFF9121 Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) VGS (t/h) 0n rds (on) @ ID •d s s V(BH)DSS ■g s s C \|S S ^rss •on •off n Max (A) Min Max //A Max (V) Min (nA) Max (pf) Max (pf) Max (ns) Max (ns) Max IRFF9110 IRFF9111 IRFF9112 IRFF9113	OCR Scan	IRFF9110 IRFF9111 IRFF9112 IRFF9113 IRFF9120 IRFF9121 IRFF9122 IRFF9123 IRFF9130 IRFF9131 MFE9200 BS107 MOTOROLA BS170 MOTOROLA MPF4150	PDF

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IRFF91 Search Results

IRFF91 Price and Stock

Rochester Electronics LLC IRFF9122

New Jersey Semiconductor Products, Inc. IRFF9130

New Jersey Semiconductor Products, Inc. IRFF9132

New Jersey Semiconductor Products, Inc. IRFF9120

New Jersey Semiconductor Products, Inc. IRFF9122

IRFF91 Datasheets (99)

IRFF91 Datasheets Context Search

Untitled

IRFF9120

Untitled

MOSFET

IRFF9130

JANTX2N6845

Untitled

Untitled

IRFF9120

IRFF9110

IRFF9110

Untitled

Untitled

IRFF9120

Untitled

IRFF9131

Untitled

IRF024

2N6844

IRF024

rectifier diode 1-35 LA V6

9131

tc 9123

MFE9200