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    IRFD222

    Abstract: IRFD223
    Text: FIT FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRFID222,223 0.7 AMPERES 200,150 VOLTS


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