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    IRFP244 Search Results

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    IRFP244 Price and Stock

    Vishay Siliconix IRFP244PBF

    MOSFET N-CH 250V 15A TO247-3
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    DigiKey IRFP244PBF Tube 4,031 1
    • 1 $4.87
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    ComSIT USA IRFP244PBF 1,350
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    Vishay Siliconix IRFP244

    MOSFET N-CH 250V 15A TO247-3
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    DigiKey IRFP244 Tube
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    Bristol Electronics IRFP244 450
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    Quest Components IRFP244 360
    • 1 $6.36
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    • 100 $3.922
    • 1000 $3.498
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    Vishay Intertechnologies IRFP244

    MOSFET N-CHANNEL 250V - Bulk (Alt: IRFP244)
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    Avnet Americas IRFP244 Bulk 500
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    Vishay Intertechnologies IRFP244PBF

    MOSFETs TO247 250V 15A N-CH MOSFET
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    Mouser Electronics IRFP244PBF 710
    • 1 $3.52
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    Verical IRFP244PBF 500 500
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    IRFP244PBF 430 3
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    IRFP244PBF 50 13
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    Arrow Electronics IRFP244PBF 500 17 Weeks 500
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    IRFP244PBF 430 13 Weeks 1
    • 1 $2.362
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    Newark IRFP244PBF Bulk 500
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    RS IRFP244PBF Bulk 919 3 Weeks 1
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    Bristol Electronics IRFP244PBF 43
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    TTI IRFP244PBF Tube 500
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    TME IRFP244PBF 595 1
    • 1 $1.61
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    Chip1Stop IRFP244PBF Tube 50
    • 1 $2.04
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    EBV Elektronik IRFP244PBF 150 14 Weeks 25
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    New Advantage Corporation IRFP244PBF 125 1
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    New Jersey Semiconductor Products, Inc. IRFP244

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFP244 350 1
    • 1 $7.0336
    • 10 $4.5718
    • 100 $3.0477
    • 1000 $2.8838
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    IRFP244 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP244 Intersil 15A and 14A, 275V and 250V, 0.28 and 0.34 ?, N-Channel Power MOSFETs Original PDF
    IRFP244 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFP244 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 15A TO-247AC Original PDF
    IRFP244 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFP244 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFP244 International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFP244 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan PDF
    IRFP244 International Rectifier TO-247 N-Channel Plastic Package HEXFETs Scan PDF
    IRFP244 International Rectifier Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=15A) Scan PDF
    IRFP244 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFP244 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP244 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP244 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFP244 Unknown FET Data Book Scan PDF
    IRFP244 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFP244A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFP244B Fairchild Semiconductor 250 V N-Channel MOSFET Original PDF
    IRFP244B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRFP244PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFP244PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 15A TO-247AC Original PDF

    IRFP244 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFP244_RC, SiHFP244_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRFP244 SiHFP244 AN609, 08-Jun-10

    Untitled

    Abstract: No abstract text available
    Text: PD - 95313 IRFP244PbF • Lead-Free Document Number: 91211 6/1/04 www.vishay.com 1 IRFP244PbF Document Number: 91211 www.vishay.com 2 IRFP244PbF Document Number: 91211 www.vishay.com 3 IRFP244PbF Document Number: 91211 www.vishay.com 4 IRFP244PbF Document Number: 91211


    Original
    PDF IRFP244PbF O-247AC IRFPE30

    IRFP244

    Abstract: No abstract text available
    Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements


    Original
    PDF IRFP244, SiHFP244 O-247 O-220 O-218 18-Jul-08 IRFP244

    035H

    Abstract: IRFPE30 95313
    Text: PD - 95313 IRFP244PbF • Lead-Free Document Number: 91211 6/1/04 www.vishay.com 1 IRFP244PbF Document Number: 91211 www.vishay.com 2 IRFP244PbF Document Number: 91211 www.vishay.com 3 IRFP244PbF Document Number: 91211 www.vishay.com 4 IRFP244PbF Document Number: 91211


    Original
    PDF IRFP244PbF O-247AC IRFPE30 035H IRFPE30 95313

    mosfet irfp 250 N

    Abstract: IRFP244B
    Text: IRFP244B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    PDF IRFP244B mosfet irfp 250 N IRFP244B

    Untitled

    Abstract: No abstract text available
    Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements


    Original
    PDF IRFP244, SiHFP244 O-247 O-220 12-Mar-07

    IRFP244

    Abstract: IRFP245 IRFP246 IRFP247 TB334
    Text: IRFP244, IRFP245, IRFP246, IRFP247 Semiconductor 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 15A and 14A, 275V and 250V • High Input Impedance These are N-Channel enhancement mode silicon gate


    Original
    PDF IRFP244, IRFP245, IRFP246, IRFP247 IRFP244 IRFP245 IRFP246 IRFP247 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated


    Original
    PDF IRFP244, SiHFP244 2002/95/EC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated


    Original
    PDF IRFP244, SiHFP244 2002/95/EC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    IRFP244

    Abstract: No abstract text available
    Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements


    Original
    PDF IRFP244, SiHFP244 O-247 O-220 O-218 18-Jul-08 IRFP244

    Untitled

    Abstract: No abstract text available
    Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated


    Original
    PDF IRFP244, SiHFP244 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    035H

    Abstract: IRFPE30 IRFP244PBF
    Text: PD - 95313 IRFP244PbF • Lead-Free 1 IRFP244PbF 2 IRFP244PbF TO-247AC Package Outline Dimensions are shown in millimeters inches TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H"


    Original
    PDF IRFP244PbF O-247AC IRFPE30 035H IRFPE30 IRFP244PBF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFP244 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 16 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original
    PDF IRFP244

    IRFP244B

    Abstract: No abstract text available
    Text: IRFP244B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    PDF IRFP244B IRFP244B

    Untitled

    Abstract: No abstract text available
    Text: IRFP244 A d van ced Power MOSFET FEATURES B V dss = 250 V ^D S o n = 0 .2 8 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 16 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


    OCR Scan
    PDF IRFP244

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFP244 FEATURES • L o w e r Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    PDF IRFP244 7Tb4142

    Untitled

    Abstract: No abstract text available
    Text: International 4655455 0015476 651 • • • • • • PD-9 588B IRFP244 Rectifier HEXFET P o w e r M O S F E T H I NR INTERNATIONAL REC TIFIER Dynam ic dv/dt Rating Repetitive Avalanche Rated Isolated Central M ounting Hole Fast Switching Ease of Paralleling


    OCR Scan
    PDF IRFP244 O-247 O-220

    irf644

    Abstract: Irfp244
    Text: IRF644/645 IRFP244/245 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    PDF IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 irf644 Irfp244

    IRF644

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    PDF G0172flfl IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 IRF644 IRFP244 IRF645 IRFP245 IRF644

    IRFP244

    Abstract: nrf d
    Text: IRFP244 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 16 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan
    PDF IRFP244 IRFP244 nrf d

    Untitled

    Abstract: No abstract text available
    Text: H E 0 I MÖSS4SE INTERNATIONAL ÜGDÖ74S 3 | Data Sheet No. PD-9.588A T-39-13 RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP244 IRFP245 N-CHANNEL Product Summary 250 Volt, 0.28 Ohm HEXFET TO-247AC TO-3P Plastic Package


    OCR Scan
    PDF T-39-13 IRFP244 IRFP245 O-247AC C-497 IRFP244, IRFP245 C-498

    irfs250a

    Abstract: No abstract text available
    Text: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A


    OCR Scan
    PDF IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A irfs250a

    IRFP244A

    Abstract: No abstract text available
    Text: IRFP244A Advanced Power MOSFET FEATURES B V dss = 2 5 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA M ax. @ ■ Lower R ^oa, : 0.214 £2 (Typ.)


    OCR Scan
    PDF IRFP244A IRFP244A

    Untitled

    Abstract: No abstract text available
    Text: h a r r IRFP244, IRFP245, IRFP246, IRFP247 i s s e m i c o n d u c t o r 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 15A and 14A, 275V and 250V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    PDF IRFP244, IRFP245, IRFP246, IRFP247