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Vishay Siliconix IRFR224PBF MOSFET N-CH 250V 3.8A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR224PBF	Tube	2,142		1	1 $2.17 10 $2.17 100 $0.98347 1000 $0.74497 10000 $0.6358	Buy Now
ComSIT USA	IRFR224PBF		800			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFR224TRPBF MOSFET N-CH 250V 3.8A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR224TRPBF	Cut Tape	690		1	1 $2.24 10 $1.436 100 $2.24 1000 $0.7793 10000 $0.7793	Buy Now
	IRFR224TRPBF	Digi-Reel	690		1	1 $2.24 10 $1.436 100 $2.24 1000 $0.7793 10000 $0.7793	Buy Now
	IRFR224TRPBF	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.66272	Buy Now
Vishay Siliconix IRFR224 MOSFET N-CH 250V 3.8A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR224	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $1.4875	Buy Now
ComSIT USA	IRFR224		2,850			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFR224TR MOSFET N-CH 250V 3.8A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR224TR	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $1.4875	Buy Now
Vishay Siliconix IRFR224TRL MOSFET N-CH 250V 3.8A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR224TRL	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.4875	Buy Now

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IRFR224 Datasheets (35)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFR224	International Rectifier	Power MOSFET	Original	PDF
IRFR224	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFR224	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 3.8A DPAK	Original	PDF
IRFR224	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRFR224	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRFR224	International Rectifier	HEXFET Power MOSFETs	Scan	PDF
IRFR224	International Rectifier	Surface Mount HEXFETs	Scan	PDF
IRFR224	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFR224	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFR224A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFR224A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFR224A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRFR224B	Fairchild Semiconductor	250V N-Channel MOSFET	Original	PDF
IRFR224B	Fairchild Semiconductor	250 V N-Channel MOSFET	Original	PDF

IRFR224B	Fairchild Semiconductor	250V N-Channel MOSFET	Original	PDF
IRFR224BTF	Fairchild Semiconductor	250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A	Original	PDF
IRFR224BTF_FP001	Fairchild Semiconductor	250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A	Original	PDF
IRFR224BTM	Fairchild Semiconductor	250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A	Original	PDF
IRFR224BTM_FP001	Fairchild Semiconductor	250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A	Original	PDF
IRFR224BTM_NL	Fairchild Semiconductor	250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A	Original	PDF

IRFR224 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFR224B Abstract: IRFU224B Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR224B IRFU224B IRFU224B
95237 Abstract: No abstract text available Text: PD- 95237 IRFR224PbF IRFU224PbF Lead-Free www.irf.com 1 05/05/04 IRFR/U224PbF 2 www.irf.com IRFR/U224PbF www.irf.com 3 IRFR/U224PbF 4 www.irf.com IRFR/U224PbF www.irf.com 5 IRFR/U224PbF 6 www.irf.com IRFR/U224PbF www.irf.com 7 IRFR/U224PbF D-Pak TO-252AA Package Outline	Original	PDF	IRFR224PbF IRFU224PbF IRFR/U224PbF O-252AA) 95237
Untitled Abstract: No abstract text available Text: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224)	Original	PDF	IRFR224, IRFU224, SiHFR224 SiHFU224 2002/95/EC O-252)
Vishay DaTE CODE Abstract: EIA-541 IRFU120 R120 U120 Text: PD- 95237A IRFR224PbF IRFU224PbF Lead-Free Document Number: 91271 12/03/04 www.vishay.com 1 IRFR/U224PbF Document Number: 91271 www.vishay.com 2 IRFR/U224PbF Document Number: 91271 www.vishay.com 3 IRFR/U224PbF Document Number: 91271 www.vishay.com 4 IRFR/U224PbF	Original	PDF	5237A IRFR224PbF IRFU224PbF IRFR/U224PbF Vishay DaTE CODE EIA-541 IRFU120 R120 U120
Untitled Abstract: No abstract text available Text: IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 1.1 Qg (Max.) (nC) 14 • Surface Mount (IRFR224, SiHFR224)	Original	PDF	IRFR224, IRFU224, SiHFR224 SiHFU224 O-252) O-251)
Untitled Abstract: No abstract text available Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR224B IRFU224B IRFU224B IRFU224 IRFU224A IRFU224BTU FP001 O-251
Untitled Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRFR224 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.1Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V	Original	PDF	IRFR224
IRFR224 Abstract: IRFU224 SiHFR224 SiHFR224-E3 Text: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration RoHS* • Surface Mount (IRFR224/SiHFR224) COMPLIANT	Original	PDF	IRFR224, IRFU224, SiHFR224 SiHFU224 IRFU224/SiHFU224) O-252) IRFR224/SiHFR224) O-251) 18-Jul-08 IRFR224 IRFU224 SiHFR224-E3
VISHAY MARKING CODE Abstract: No abstract text available Text: PD- 95237A IRFR224PbF IRFU224PbF Lead-Free Document Number: 91271 12/03/04 www.vishay.com 1 IRFR/U224PbF Document Number: 91271 www.vishay.com 2 IRFR/U224PbF Document Number: 91271 www.vishay.com 3 IRFR/U224PbF Document Number: 91271 www.vishay.com 4 IRFR/U224PbF	Original	PDF	5237A IRFR224PbF IRFU224PbF IRFR/U224PbF VISHAY MARKING CODE
IRFR224A Abstract: No abstract text available Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR224B IRFU224B IRFR224BTM FP001 O-252 IRFR224BTF FP001 IRFR224A
Untitled Abstract: No abstract text available Text: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224)	Original	PDF	IRFR224, IRFU224, SiHFR224 SiHFU224 2002/95/EC O-252)
EIA-541 Abstract: IRFU120 R120 U120 Text: PD- 95237A IRFR224PbF IRFU224PbF Lead-Free www.irf.com 1 12/03/04 IRFR/U224PbF 2 www.irf.com IRFR/U224PbF www.irf.com 3 IRFR/U224PbF 4 www.irf.com IRFR/U224PbF www.irf.com 5 IRFR/U224PbF 6 www.irf.com IRFR/U224PbF www.irf.com 7 IRFR/U224PbF D-Pak TO-252AA Package Outline	Original	PDF	5237A IRFR224PbF IRFU224PbF IRFR/U224PbF EIA-541 IRFU120 R120 U120
IRFR224 Abstract: IRFU224 SiHFR224 SiHFR224-E3 IRFU N-Channel Power MOSFETs Text: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRFR224, IRFU224, SiHFR224 SiHFU224 O-252) O-251) IRFR224 IRFU224 SiHFR224-E3 IRFU N-Channel Power MOSFETs
Untitled Abstract: No abstract text available Text: IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 1.1 Qg (Max.) (nC) 14 • Surface Mount (IRFR224, SiHFR224)	Original	PDF	IRFR224, IRFU224, SiHFR224 SiHFU224 O-252) O-251)

IRFR224B Abstract: IRFU224B Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR224B IRFU224B IRFU224B
SiHFR224TR-GE3 Abstract: No abstract text available Text: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224)	Original	PDF	IRFR224, IRFU224, SiHFR224 SiHFU224 2002/95/EC O-252) SiHFR224TR-GE3
SS*2n60b Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031	Original	PDF	O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original	PDF
1RFR224 Abstract: AN-994 IRFR224 IRFU224 1RFU224 Text: International S Rectifier PD-9.600A IRFR224 IRFU224 HEXFET P ow er M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224) Available in Tape & Reel Fast Switching Ease of Paralleling	OCR Scan	PDF	IRFR224 IRFR224) IRFU224) 1RFR224 AN-994 IRFR224 IRFU224 1RFU224
IRFR224 Abstract: No abstract text available Text: IRFR224 A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 1-1 3.8 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 250V	OCR Scan	PDF	IRFR224 IRFR224
Untitled Abstract: No abstract text available Text: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)	OCR Scan	PDF	Mfl55452 IRFR224 IRFU224 IRFR224) IRFU224)
034AA Abstract: No abstract text available Text: IRFR224 Advanced Power MOSFET FEATURES BVdss = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 1-1 ^ 3.8 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 250V	OCR Scan	PDF	IRFR224 034AA
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRFR224/U224 FEATURES D -P A K • Low er R d s <o n • Improved inductive ruggedness » Fast sw itching tim es 2 • Rugged polysilicon gate cell structure « • Low er input cap acitance * •Extended sa fe operating area • Improved high tem perature reliability	OCR Scan	PDF	IRFR224/U224 IRFR224 IRFU224 Jb4142
Untitled Abstract: No abstract text available Text: IRFR224 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance CO bo ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V	OCR Scan	PDF	IRFR224

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Vishay Siliconix IRFR224PBF

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IRFR224 Datasheets (35)

IRFR224 Datasheets Context Search

IRFR224B

95237

Untitled

Vishay DaTE CODE

Untitled

Untitled

Untitled

IRFR224

VISHAY MARKING CODE

IRFR224A

Untitled

EIA-541

IRFR224

Untitled

IRFR224B

SiHFR224TR-GE3

SS*2n60b

mosfet cross reference

1RFR224

IRFR224

Untitled

034AA

Untitled

Untitled