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    IRG4BC30S Price and Stock

    Infineon Technologies AG IRG4BC30S

    IGBT 600V 34A 100W TO220AB
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    DigiKey IRG4BC30S Tube 300
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    Infineon Technologies AG IRG4BC30S-S

    IGBT 600V 34A 100W D2PAK
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    DigiKey IRG4BC30S-S Tube 250
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    Rochester Electronics LLC IRG4BC30SPBF

    IGBT 600V 34A TO220AB
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    DigiKey IRG4BC30SPBF Bulk 216
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    Infineon Technologies AG IRG4BC30SPBF

    IGBT 600V 34A 100W TO220AB
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    Verical IRG4BC30SPBF 4,000 239
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    IRG4BC30SPBF 995 239
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    IRG4BC30SPBF 375 239
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    Newark IRG4BC30SPBF Bulk 1
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    Rochester Electronics IRG4BC30SPBF 5,370 1
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    • 100 $1.26
    • 1000 $1.14
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    Infineon Technologies AG AUIRG4BC30S-S

    IGBT 600V 34A 100W D2PAK
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    DigiKey AUIRG4BC30S-S Tube
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    Rochester Electronics AUIRG4BC30S-S 25,255 1
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    • 100 $1.49
    • 1000 $1.35
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    Chip 1 Exchange AUIRG4BC30S-S 14,228
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    Find more IRG4BC30S price and stock on Findchips.com

    IRG4BC30S Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4BC30S International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; A IRG4BC30S with Standard Packaging Original PDF
    IRG4BC30S International Rectifier IGBT INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC30S International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC30S International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Insulated Gate, Bipolar, 600V, 34A, TO-220 Scan PDF
    IRG4BC30SPbF International Rectifier TRANS IGBT CHIP N-CH 600V 34A 3TO-220AB Original PDF
    IRG4BC30SPBF International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; Similar to IRG4BC30S with Lead Free Packaging Original PDF
    IRG4BC30SS International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, Original PDF
    IRG4BC30SS International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Original PDF
    IRG4BC30S-S International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package; A IRG4BC30S-S with Standard Packaging Original PDF
    IRG4BC30S-S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Original PDF
    IRG4BC30S-S International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC30S-SPBF International Rectifier Original PDF
    IRG4BC30S-SPBF International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package; Similar to IRG4BC30S-S with Lead Free Packaging Original PDF
    IRG4BC30S-STRLP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 34A 100W D2PAK Original PDF

    IRG4BC30S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95786 IRG4BC30S-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency


    Original     		PDF IRG4BC30S-SPbF EIA-418.

    IRF1010

    Abstract: No abstract text available
    Text: PD - 95170 IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30SPbF O-220AB O-220AB IRF1010 IRF1010

    Untitled

    Abstract: No abstract text available
    Text: PD - 95170 IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30SPbF O-220AB O-220AB EARV-22 IRF1010

    IRG4BC30S-S

    Abstract: No abstract text available
    Text: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency


    Original     		PDF IRG4BC30S-S EIA-418. IRG4BC30S-S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95170A IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5170A IRG4BC30SPbF O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency


    Original     		PDF IRG4BC30S-S EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD - 91593A IRG4BC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1593A IRG4BC30S O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95786A IRG4BC30S-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency


    Original     		PDF 5786A IRG4BC30S-SPbF Continu90 EIA-418.

    IGBT W 20 NK 50 Z

    Abstract: IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC30S
    Text: PD - 9.1593 IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30S O-220AB O-220AB IGBT W 20 NK 50 Z IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC30S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95786 IRG4BC30S-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency


    Original     		PDF IRG4BC30S-SPbF EIA-418.

    IRF 810

    Abstract: IRG4BC30S-S
    Text: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency


    Original     		PDF IRG4BC30S-S EIA-418. IRF 810 IRG4BC30S-S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95170A IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5170A IRG4BC30SPbF O-220AB O-220AB 4BC30SPbF

    irg4bc30s

    Abstract: No abstract text available
    Text: PD - 91593A IRG4BC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1593A IRG4BC30S O-220AB O-220AB irg4bc30s

    IRG4BC30S

    Abstract: No abstract text available
    Text: PD - 91593A IRG4BC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1593A IRG4BC30S O-220AB O-220AB VG252-7105 IRG4BC30S

    IRG4PC30S

    Abstract: igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S
    Text: International Rectifier EXISTING Products The IR IGBT Navigator NEW UPCOMING Products Products released to to be released within production in last 6next 3-4 months 9 months POTENTIAL Products no current plans. see bus.mgmt. Effective 15 June 2000 Voltage


    Original     		PDF O-220 Pak/TO-262 O-220 O-247 Super247 IRGP20B120UD-E IRG4BC40K IRG4PC30K IRG4PC40K IRG4PC50K IRG4PC30S igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


    Original     		PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRG4BC30S

    Abstract: 300C IRG4CC30SB
    Text: PD- 91760 IRG4CC30SB IRG4CC30SB IGBT Die in Wafer Form C 600 V Size 3 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		PDF IRG4CC30SB IRG4CC30SB 150mm, IRG4BC30S IRG4BC30S 300C

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC30S O-22QAB S54S2

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier PD - 9 .1 5 9 3 IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC30S O-220AB

    G4BC

    Abstract: No abstract text available
    Text: International IÖ R Rectifier IGBTs VCES Collector-to-Emitter Voltage V Part Number •c Continuous Collector Current Tf =25°C TC=25°C (A) (A) Wax-VcE(o)i) Co)lector-to-Emittef Voltage (V) h Max. Power Dissipation (W) Fax on Demand Number Case Outline


    OCR Scan     		PDF O-22QAB IRG4BC20S IRG4BC30S O-247AC IRG4P254S IRG4PC30S IRG4PC40S IRG4PC50S IRG4PH50S G4BC