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    Infineon Technologies AG IRG4PH50KDPBF

    IGBT 1200V 45A 200W TO247AC
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    RS IRG4PH50KDPBF Bulk 1
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    International Rectifier IRG4PH50KD

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    ComSIT USA IRG4PH50KD 50
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    International Rectifier IRG4PH50KDPBF

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    Velocity Electronics IRG4PH50KDPBF 2
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    IRG4PH50KD Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4PH50KD International Rectifier 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package; A IRG4PH50KD with Standard Packaging Original PDF
    IRG4PH50KD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4PH50KDPBF International Rectifier Original PDF
    IRG4PH50KDPBF International Rectifier 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package; Similar to IRG4PH50KD with Lead Free Packaging Original PDF

    IRG4PH50KD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG4PH50KD

    Abstract: IR 1838 T IRGPH50KD2 IRGPH50MD2 IR 1838 motor IG 2200 19 00001
    Text: PD- 91575B IRG4PH50KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF 91575B IRG4PH50KD char20 IRG4PH50KD IR 1838 T IRGPH50KD2 IRGPH50MD2 IR 1838 motor IG 2200 19 00001

    IRGPH50MD2

    Abstract: IRGPH50KD2 irgph50kd2 e 035H IRFPE30
    Text: PD- 95189 IRG4PH50KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4PH50KDPbF MinimiIRG4PH50KDPbF O-247AC IRFPE30 IRGPH50MD2 IRGPH50KD2 irgph50kd2 e 035H IRFPE30

    IRG4PH50KD

    Abstract: IRGPH50KD2 IRGPH50MD2
    Text: PD- 91575B IRG4PH50KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF 91575B IRG4PH50KD char52-7105 IRG4PH50KD IRGPH50KD2 IRGPH50MD2

    IR 1838 T

    Abstract: IR 1838 035H IRFPE30 IRGPH50KD2 IRGPH50MD2 irgph50kd IRG4P IRG4PH50KDPBF br 6500
    Text: PD- 95189 IRG4PH50KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4PH50KDPbF O-247AC IRFPE30 IR 1838 T IR 1838 035H IRFPE30 IRGPH50KD2 IRGPH50MD2 irgph50kd IRG4P IRG4PH50KDPBF br 6500

    Untitled

    Abstract: No abstract text available
    Text: PD- 91575B IRG4PH50KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF 91575B IRG4PH50KD

    IR 1838 T

    Abstract: IRG4PH50KD IRGPH50KD2 IRGPH50MD2 TL 1838
    Text: PD- 91575A IRG4PH50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V


    Original     		PDF 1575A IRG4PH50KD IR 1838 T IRG4PH50KD IRGPH50KD2 IRGPH50MD2 TL 1838

    Untitled

    Abstract: No abstract text available
    Text: PD- 95189 IRG4PH50KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4PH50KDPbF O-247AC IRFPE30

    IR 1838 T

    Abstract: TO-247AC Package IR 1838 TO-247AC Package igbt IR 1838 T datasheet 200v dc motor igbt High efficiency ultrafast diode irf 100v 200A 125 diode GE DIODE
    Text: PD- 95189 IRG4PH50KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4PH50KDPbF O-247AC IRFPE30 IR 1838 T TO-247AC Package IR 1838 TO-247AC Package igbt IR 1838 T datasheet 200v dc motor igbt High efficiency ultrafast diode irf 100v 200A 125 diode GE DIODE

    IPM PLASMA

    Abstract: 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B
    Text: IRAM | Selection Guide Product Line Overview IRAM Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and


    Original     		PDF SIP-05 O-247AC IRG7PH30K10D IRGP20B120U-EP IRG4PH50KDPBF O-220AB; O-220 IPM PLASMA 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    IR2133

    Abstract: IR2233 ir2233j application IR2133 3 phase IR2235 application note ir2233j IR2133J IRG4PH40KD IR2135 MV-CA IR2135
    Text: Preliminary Data Sheet No. PD60107K IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation · · · · · · Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60107K IR2133 IR2135 IR2233 IR2235 0V/12V IR213rature IRG4PH50KD) IR2133J IRG4ZH71KD) ir2233j application IR2133 3 phase IR2235 application note ir2233j IRG4PH40KD IR2135 MV-CA IR2135

    application note ir2233j

    Abstract: IR2133J IR2235 ir2233j application IR2133 IR2133 application note
    Text: Data Sheet No. PD60107-Q IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60107-Q IR2133/IR2135 IR2233/IR2235 0V/12V IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead MS-011AB) application note ir2233j IR2235 ir2233j application IR2133 IR2133 application note

    IR2133 application note

    Abstract: IR2133 application notes
    Text: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and


    Original     		PDF PD60107 IR2133/IR2135 IR2233/IR2235 0V/12V 28-Lead IR2133 application note IR2133 application notes

    IR2133 application note

    Abstract: No abstract text available
    Text: Data Sheet No. PD60107-R IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60107-R IR2133/IR2135 IR2233/IR2235 0V/12V IR2133IR2135/IR2233I IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead IR2133 application note

    4410 SO-8

    Abstract: irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF
    Text: 1967-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 1967 25 Power MOSFETs and IGBTs RoHS N Channel, 150 Volt VDSS VGS V ID (A) Power (W) RDS(on) (Ω) RTH (JC) (°C/W) Gate Drive Package EACH 70016952 70016954 70017481 70017261 70017492 70017500 70017262 70017029


    Original     		PDF IRF3315PBF IRF3415PBF IRF3415SPBF IRFB23N15DPBF IRFB41N15DPBF IRFB52N15DPBF IRFB61N15DPBF IRFL4315PBF IRFPS3815PBF IRFS52N15DPBF 4410 SO-8 irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IR2133J

    Abstract: irg4p*50kd IR2133 IR2135 IR2233 IR2235
    Text: Back Preliminary Data Sheet No. PD60107J IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage


    Original     		PDF PD60107J IR2133 IR2135 IR2233 IR2235 0V/12V Descript90245 IR2133J irg4p*50kd IR2135 IR2235

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		PDF HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    IR2133

    Abstract: ir2233j application IR2133J IR2233 PD60107-P
    Text: Data Sheet No. PD60107-P IR2133 5 (J&S) IR2233(5) (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60107-P IR2133 IR2233 0V/12V IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead MS-011AB) ir2233j application PD60107-P

    TL 1838

    Abstract: IRG4PH50KD
    Text: International 1GR Rectifier PD- 9.1575 IRG4PH50KD PRELIM INARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc=10fis, V cc = 720V , T j = 125°C,


    OCR Scan     		PDF IRG4PH50KD 10fis, TL 1838 IRG4PH50KD

    Untitled

    Abstract: No abstract text available
    Text: International Rectifier IGR PD- 91575A IRG4PH50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 1200V • High short circuit rating o ptim ized for m otor control, tsc =10 as, V Cc = 7 2 0 V , T j = 1 2 5 ° C ,


    OCR Scan     		PDF 1575A IRG4PH50KD

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No. PD60107J International IQ R Rectifier IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features Product Summary • F loa ting ch a n n e l d e sig n e d for b o o tstra p op era tion F ully o p e ra tio n a l to + 6 0 0 V o r+ 1 2 0 0 V


    OCR Scan     		PDF PD60107J IR2133 IR2135 IR2233 IR2235 IR2133/IR2135/IR2233/IR2235 IR2233J IRG4PH30KD) IRG4PH40KD)

    RG4BC30KD-S

    Abstract: RG4PH40 IRG4PH50KD RG4PH40KD
    Text: International Iö R Rectifier IGBTs VCES Colledor-to-Emitter Voltage V Port Number Max. V ci{on) Colledor-to-Emitter Voltage (V) •c Continuous Collector Current Tf =25°C TC=2S°C (A) (A) h Max. Power Dissipation (W) Fax on Demand Number Case Outline Key


    OCR Scan     		PDF IRG4BC20KD-S RG4BC30KD-S T0-220AB IRG4BC20KD IRG4BC30KD O-220 IRG4IBC20KD 1RG4IBC30KD O-247AC IRG4PC30KD RG4PH40 IRG4PH50KD RG4PH40KD