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    IRHM91 Price and Stock

    International Rectifier IRHM9130

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRHM9130 1
    • 1 $600
    • 10 $600
    • 100 $600
    • 1000 $600
    • 10000 $600
    Buy Now

    International Rectifier IRHM9160

    35 A, 100 V, 0.075 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-254AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRHM9160 1
    • 1 $787.5
    • 10 $787.5
    • 100 $787.5
    • 1000 $787.5
    • 10000 $787.5
    Buy Now

    IRHM91 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHM9130 International Rectifier -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package Original PDF
    IRHM9130 International Rectifier RADIATION HARDENED POWER MOSFET Original PDF
    IRHM9130 International Rectifier HEXFET TRANSISTOR Scan PDF
    IRHM9130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRHM9150 International Rectifier -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package Original PDF
    IRHM9150 International Rectifier RADIATION HARDENED POWER MOSFET Original PDF
    IRHM9150 International Rectifier -100Volt, 0.080 Ohm, RAD HARD HEXFET TRANSISTOR Original PDF
    IRHM9150 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRHM9160 International Rectifier RADIATION HARDENED POWER MOSFET Original PDF
    IRHM9160 International Rectifier -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package Original PDF
    IRHM9160 International Rectifier REPETITIVE AVALANCHE AND dv-dt RATED HEXFET TRANSISTOR Original PDF
    IRHM9160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRHM91 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JANSR2N7422

    Abstract: IRHM9150 IRHM93150 JANSF2N7422
    Text: PD - 90889C IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω ID -22A QPL Part Number


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    PDF 90889C IRHM9150 JANSR2N7422 O-254AA) MIL-PRF-19500/662 IRHM93150 JANSF2N7422 O-254AA JANSR2N7422 IRHM9150 IRHM93150 JANSF2N7422

    Untitled

    Abstract: No abstract text available
    Text: PD - 91415C IRHM9160 IRHM93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    Original
    PDF 91415C

    Untitled

    Abstract: No abstract text available
    Text: PD - 90888B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9130 100K Rads (Si) IRHM93130 300K Rads (Si) RDS(on) 0.3Ω ID -11A 0.3Ω -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for


    Original
    PDF 90888B O-254AA) IRHM9130 IRHM93130 O-254AA. MIL-PRF-19500

    PD908

    Abstract: No abstract text available
    Text: PD-90889E IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω ID -22A QPL Part Number


    Original
    PDF PD-90889E IRHM9150 JANSR2N7422 O-254AA) MIL-PRF-19500/662 IRHM93150 JANSF2N7422 O-254AA PD908

    Untitled

    Abstract: No abstract text available
    Text: IRHM9130 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.0 @Temp (øC)100 IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original
    PDF IRHM9130

    Untitled

    Abstract: No abstract text available
    Text: IRHM9130D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.0 @Temp (øC)100 IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55


    Original
    PDF IRHM9130D

    IRHM9160

    Abstract: IRHM93160 JANSF2N7425 JANSR2N7425
    Text: PD - 91415F IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω


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    PDF 91415F IRHM9160 JANSR2N7425 MIL-PRF-19500/660 O-254AA) IRHM93160 JANSF2N7425 O-254AA. IRHM9160 IRHM93160 JANSF2N7425 JANSR2N7425

    IRHM9150

    Abstract: IRHM93150
    Text: PD - 90889B IRHM9150 IRHM93150 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    Original
    PDF 90889B IRHM9150 IRHM93150 IRHM9150 IRHM93150

    IRHM9160

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1415 IRHM9160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.087Ω Product Summary International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold


    Original
    PDF IRHM9160 IRHM9160

    IRHM9160

    Abstract: IRHM93160
    Text: Preliminary Data Sheet No. PD-9.1415B IRHM9160 IRHM93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


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    PDF 1415B IRHM9160 IRHM93160 IRHM9160 IRHM93160

    international rectifier NE 22

    Abstract: IRHM9150 IRHM93150
    Text: Provisional Data Sheet No. PD - 9.889A IRHM9150 IRHM93150 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100Volt, 0.080Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold


    Original
    PDF IRHM9150 IRHM93150 -100Volt, international rectifier NE 22 IRHM9150 IRHM93150

    JANSR2N7425

    Abstract: IRHM9160 IRHM93160 JANSF2N7425 35AA L082
    Text: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω


    Original
    PDF PD-91415G IRHM9160 JANSR2N7425 MIL-PRF-19500/660 O-254AA) IRHM93160 JANSF2N7425 O-254AA. JANSR2N7425 IRHM9160 IRHM93160 JANSF2N7425 35AA L082

    IRHM9130

    Abstract: IRHM93130
    Text: PD - 90888A IRHM9130 IRHM93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    Original
    PDF 0888A IRHM9130 IRHM93130 IRHM9130 IRHM93130

    Untitled

    Abstract: No abstract text available
    Text: PD - 90888C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9130 100K Rads (Si) IRHM93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for


    Original
    PDF 90888C O-254AA) IRHM9130 IRHM93130 O-254AA. MIL-PRF-19500

    IRHM9150

    Abstract: IRHM93150 JANSF2N7422 JANSR2N7422
    Text: PD - 90889D IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω IRHM93150 300K Rads (Si) 0.080Ω


    Original
    PDF 90889D IRHM9150 JANSR2N7422 O-254AA) MIL-PRF-19500/662 IRHM93150 JANSF2N7422 O-254AA. IRHM9150 IRHM93150 JANSF2N7422 JANSR2N7422

    JANSR2N7425

    Abstract: IRHM9160 IRHM93160 JANSF2N7425
    Text: PD - 91415E IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω ID QPL Part Number


    Original
    PDF 91415E IRHM9160 JANSR2N7425 MIL-PRF-19500/660 O-254AA) IRHM93160 JANSF2N7425 O-254AA. JANSR2N7425 IRHM9160 IRHM93160 JANSF2N7425

    Untitled

    Abstract: No abstract text available
    Text: IRHM9150D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D)13 @Temp (øC)100 IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original
    PDF IRHM9150D

    h268

    Abstract: H269
    Text: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM9150 RAD HARD -100 Volt, 0.120», RAD HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and


    OCR Scan
    PDF IRHM9150 1x105 1x1012 MIL-STD-750, H-270 h268 H269

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier Provisional Data S h eet No. PD -9.1415 IRHM9160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD P roduct S u m m ary -100 Volt, 0 .0 8 7 a RAD H A R D H EXFET International Rectifier’s P-channel RAD HARD tech­


    OCR Scan
    PDF IRHM9160 105Rads

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.888 I3 R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.300, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and


    OCR Scan
    PDF IRHM913Q 1x105 1x105 MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM915Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.12012, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and


    OCR Scan
    PDF IRHM915Q 1x105 1x105 1x1012 MIL-STD-750,

    H265

    Abstract: TO-254AA Package H266
    Text: Data Sheet No. PD-9.888 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD -1 0 0 Volt, 0.30H, RAO HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and


    OCR Scan
    PDF IRHM913Q 1x105 1x1012 MIL-STD-750, H-266 H265 TO-254AA Package H266

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No. PD-9.1415B International TOR Rectifier IRHM91 60 IRHM93160 R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR P -C H A N N E L RAD HARD -100 Volt, 0.073£2, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology


    OCR Scan
    PDF 1415B IRHM91 IRHM93160

    IRHM9130

    Abstract: P-channel HEXFET Power MOSFET H265
    Text: Data Sheet No. PD-9.888 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD -100 Volt, 0.30&, RAD HARD H EXFET In te rn atio n al R e ctttle r’s P -C hannel RAD H A R D Technology HEXFETs d e m on strate excellen t th re sh o ld voltag e s ta b ility and


    OCR Scan
    PDF IRHMS13Q 1x105 1x1012 MIL-STC-760, IRHM9130 P-channel HEXFET Power MOSFET H265