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    IRLMS1902 Search Results

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    IRLMS1902 Price and Stock

    Infineon Technologies AG IRLMS1902TR

    MOSFET N-CH 20V 3.2A MICRO6
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    DigiKey IRLMS1902TR Reel 3,000
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    • 10000 $3.3375
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    Win Source Electronics IRLMS1902TR 4,830
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    • 1000 $0.27
    • 10000 $0.242
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    Infineon Technologies AG IRLMS1902TRPBF

    MOSFET N-CH 20V 3.2A MICRO6
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    DigiKey IRLMS1902TRPBF Reel
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    IRLMS1902TRPBF Digi-Reel 1
    • 1 $0.55
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    Newark IRLMS1902TRPBF Cut Tape 5
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    RS IRLMS1902TRPBF Bulk 50
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    Bristol Electronics IRLMS1902TRPBF 6,593
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    Quest Components IRLMS1902TRPBF 5,274
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    IRLMS1902TRPBF 5,274
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    IRLMS1902TRPBF 1,481
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    IRLMS1902TRPBF 1,481
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    Rochester Electronics IRLMS1902TRPBF 13,943 1
    • 1 $0.1725
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    TME IRLMS1902TRPBF 3,000
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    Win Source Electronics IRLMS1902TRPBF 2,856
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    International Rectifier IRLMS1902TR

    POWER FIELD-EFFECT TRANSISTOR, 3.2A I(D), 20V, 0.1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components IRLMS1902TR 3,000
    • 1 $7.6755
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    • 1000 $2.8144
    • 10000 $2.6864
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    International Rectifier IRLMS1902TRPBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA IRLMS1902TRPBF 2,365
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    International Rectifier IRLMS1902

    HEXFET Power MOSFET
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    Win Source Electronics IRLMS1902 4,850
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    IRLMS1902 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRLMS1902 International Rectifier HEXFET Power MOSFET Original PDF
    IRLMS1902 International Rectifier HEXFET Power MOSFET Original PDF
    IRLMS1902 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRLMS1902TR International Rectifier HEXFET Power MOSFET Original PDF
    IRLMS1902TRPBF International Rectifier Original PDF

    IRLMS1902 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRLMS 4502 D

    Abstract: EIA-541 IRLMS1503 IRLMS2002 IRLMS6803 400V Single N-Channel HEXFET Power MOSFET pulse transformer 4502 irlmS1902pbf
    Text: PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per


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    IRLMS1902PbF EIA-481 EIA-541. IRLMS 4502 D EIA-541 IRLMS1503 IRLMS2002 IRLMS6803 400V Single N-Channel HEXFET Power MOSFET pulse transformer 4502 irlmS1902pbf PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per


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    IRLMS1902PbF EIA-481 EIA-541. PDF

    lm 2004

    Abstract: Micro6 Package
    Text: IRLMS1902 Package Outline HEXFET Micro6 Outline 3 .0 0 .1 1 8 2 .8 0 (.1 1 1 ) 1 .7 5 (.0 6 8 ) 1 .5 0 (.0 6 0 ) 6 -A - 1 LE AD A SS IG N MEN T S R EC O MME N D E D FO O T PR IN T -B - 5 4 2 3 6X 2X 0 .1 5 D 6 5 4 1 2 3 D D G 2 X 0. 9 5 (.0 3 7 5 ) S 6 X (1 .06 (.0 4 2 )


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    IRLMS1902 lm 2004 Micro6 Package PDF

    IRF 042

    Abstract: IRLMS1902
    Text: PD - 91540C IRLMS1902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per


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    91540C IRLMS1902 EIA-481 EIA-541. IRF 042 IRLMS1902 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91540C IRLMS1902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per


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    91540C IRLMS1902 EIA-481 EIA-541. PDF

    IRLMS1902

    Abstract: No abstract text available
    Text: PD - 9.1540B IRLMS1902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET , $ , / Description  Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve


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    1540B IRLMS1902 IRLMS1902 PDF

    IRLMS6803

    Abstract: EIA-541 IRLMS1503 IRLMS2002 mosfet 4502 5703 mosfet
    Text: PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per


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    IRLMS1902PbF EIA-481 EIA-541. IRLMS6803 EIA-541 IRLMS1503 IRLMS2002 mosfet 4502 5703 mosfet PDF

    lm 2004

    Abstract: 36X5
    Text: IRLMS1902 Package Outline HEXFET Micro6 Outline 3 .0 0 .1 1 8 2 .8 0 (.1 1 1 ) 1 .7 5 (.0 6 8 ) 1 .5 0 (.0 6 0 ) 6 -A - 1 LE AD A SS IG N MEN T S R EC O MME N D E D FO O T PR IN T -B - 5 4 2 3 6X 2X 0 .1 5 D 6 5 4 1 2 3 D D G 2 X 0. 9 5 (.0 3 7 5 ) S 6 X (1 .06 (.0 4 2 )


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    IRLMS1902 lm 2004 36X5 PDF

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


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    IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET PDF

    IRLMS6803

    Abstract: j y w sot23 IRLMS1503 IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 IRLMS6802 h d 2001
    Text: Micro6 SOT-23 6L W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK PART NUMBER TOP LOT CODE YEAR Y 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z PART NUMBER CODE REFERENCE:


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    OT-23 IRLMS1902 IRLMS1503 IRLMS6702 IRLMS5703 IRLMS6802 IRLMS4502 IRLMS2002 IRLMS6803 IRLMS6803 j y w sot23 IRLMS1503 IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 IRLMS6802 h d 2001 PDF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


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    OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 PDF

    irlms4502

    Abstract: IRLMS1503 IRLMS1902 IRLMS5703 IRLMS6702 IRLMS6802
    Text: PD - 94893 IRLML2402PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V G RDS(on) = 0.25Ω S Description


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    IRLML2402PbF OT-23 EIA-481 EIA-541. irlms4502 IRLMS1503 IRLMS1902 IRLMS5703 IRLMS6702 IRLMS6802 PDF

    IRLM6702

    Abstract: irlm2502 IRLM1902 CPH3409 swiching power pwm circuits CMS02 CPH6315 XC9303 RFB11 Audio Amplifier MOSFET TOSHIBA
    Text: High Efficiency, Synchronous Step-Up & Down DC / DC Controller ICs XC9303 Series July 3, 2003 Ver. 1 ! Synchronous Step-up & down DC / DC Controller ! Input Voltage Range 2.0V ~ 10.0V ! Output Voltage Externally Set-up ! Oscillation Frequency 300 kHz Accuracy ±15%


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    XC9303 300kHz, 20mV/div 300mA 230mA IRLM6702 irlm2502 IRLM1902 CPH3409 swiching power pwm circuits CMS02 CPH6315 RFB11 Audio Amplifier MOSFET TOSHIBA PDF

    IRLMS6803

    Abstract: IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 58AV
    Text: PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


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    IRLMS1503PbF leadframe01 EIA-481 EIA-541. IRLMS6803 IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 58AV PDF

    IRLML5203PBF

    Abstract: urf7
    Text: PD - 94895 IRLML5203PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier


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    IRLML5203PbF OT-23 EIA-481 EIA-541. IRLML5203PBF urf7 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    Untitled

    Abstract: No abstract text available
    Text: ☆GO-Compatible ◆Synchronous Step-Down DC/DC Controllers ◆Input Voltage Range :2.0V ~10.0V ◆Output Voltage Externally Set-Up ◆Oscillation Frequency :300kHz ±15% ◆Maximum Duty Cycle :100% (TYP.) ◆PWM and PWM/PFM Externally Selectable ◆Synchronous Rectification Control


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    300kHz XC9210 PDF

    Untitled

    Abstract: No abstract text available
    Text: ☆GO-Compatible ◆Synchronous Step-Down DC/DC Controllers ◆Input Voltage Range :2.0V ~10.0V ◆Output Voltage Externally Set-Up ◆Oscillation Frequency :300kHz ±15% ◆Maximum Duty Cycle :100% (TYP.) ◆PWM and PWM/PFM Externally Selectable ◆Synchronous Rectification Control


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    300kHz XC9210 300mA 1000mA XC9210 PDF

    irlml2404

    Abstract: transistor 9529 IRF7603 IRF7389 IRF7103 irlml2402 Small-Outline SMD Reliability Report 704618 HEXFET SO-8 irf7404 datasheet
    Text: Small-Outline SMD Reliability Report Page 1 Table of Contents Section I. II. III. IV. V. VI. VII. VIII. IX. X. Page Executive Summary Introduction Procedure Reliability Tests - Table I Electrical Tests - Table II Test Purposes & Common Failure Mechanisms Reliability Data


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    PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    2D 1002 diode

    Abstract: sot 23 d9 d3s marking
    Text: PD - 9.1540B International IOR Rectifier IRLMS1902 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 20 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier


    OCR Scan
    OT-23. 2D 1002 diode sot 23 d9 d3s marking PDF

    c639

    Abstract: c637 diode diode C639 Micro6 Package for c639 C639 10 C637
    Text: PD - 9.1540A International IO R Rectifier IRLMS1902 HEXFET Power M O SFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET r- 1 0: : - • • i : D V d s s = 20V i : G 1 : .J - - _


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    IRLMS1902 0Q001 C-639 c639 c637 diode diode C639 Micro6 Package for c639 C639 10 C637 PDF

    SMD MARKING CODE C17

    Abstract: MARKING MON sot-23 smd diode marking hg marking code 6c SMD IRLMSS703 l00a HG marking sot23
    Text: PD 9.1540 International I G R Rectifier I IR L M S 1 9 0 2 PRELIMINARY HEXFET Power MOSFET Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 20V ^D S(on) = 0 .1 0 Q Description Fifth Generation HEXFETs from International Rectifier


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    OT-23. EIA-411 SMD MARKING CODE C17 MARKING MON sot-23 smd diode marking hg marking code 6c SMD IRLMSS703 l00a HG marking sot23 PDF

    IRLMS6803

    Abstract: IRLMS1503 IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 IRLMS6802
    Text: Micro6 SOT-23 6L W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR rn PART NUMBER rn n n rn Y - YEAR w = week AYWLC mrt TOP LOT CODE Y WORK WEEK W 2001 1 01 2002 2003 2004 2005 1996 1997 1998 1999 2000 2 3 4 5 02 03 04 A B C D 24 25 26 X Y Z 6 7


    OCR Scan
    OT-23 IRLMS1902 IRLMS1503 IRLMS6702 IRLMS5703 IRLMS6802 IRLMS4502 IRLMS2002 IRLMS6803 IRLMS6803 PDF