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    IXBT42N300HV Search Results

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    IXBT42N300HV Price and Stock

    IXYS Corporation IXBT42N300HV

    IGBT 3000V 104A TO268HV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBT42N300HV Tube 1
    • 1 $50.06
    • 10 $50.06
    • 100 $40.23267
    • 1000 $40.23267
    • 10000 $40.23267
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    Mouser Electronics IXBT42N300HV
    • 1 $50.06
    • 10 $50.05
    • 100 $40.23
    • 1000 $40.23
    • 10000 $40.23
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    Future Electronics IXBT42N300HV Tube 44 Weeks 300
    • 1 -
    • 10 -
    • 100 $39.64
    • 1000 $39.45
    • 10000 $39.45
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    TTI IXBT42N300HV Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $42.24
    • 10000 $42.24
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    TME IXBT42N300HV 1
    • 1 $61.93
    • 10 $49.19
    • 100 $45.82
    • 1000 $45.82
    • 10000 $45.82
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    Littelfuse Inc IXBT42N300HV

    Transistor, 3Kv, 104A, To-268Hv Rohs Compliant: Yes |Littelfuse IXBT42N300HV
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    Newark IXBT42N300HV Bulk 1
    • 1 $49.06
    • 10 $44.24
    • 100 $39.43
    • 1000 $39.43
    • 10000 $39.43
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    RS IXBT42N300HV Bulk 8 Weeks 30
    • 1 -
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    • 100 $62.23
    • 1000 $62.23
    • 10000 $62.23
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    IXYS Integrated Circuits Division IXBT42N300HV

    IGBT DIS.DIODE SINGLE 42A 3000V BIMOSFET TO268(D3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBT42N300HV
    • 1 $70.22763
    • 10 $70.22763
    • 100 $65.6333
    • 1000 $65.6333
    • 10000 $65.6333
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    IXBT42N300HV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBT42N300HV IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3000V 42A 357W TO268 Original PDF

    IXBT42N300HV Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBT42N300HV IC110 O-268 100ms 42N300 1-09-12-A

    IXBT42N300HV

    Abstract: transistor 42A
    Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBT42N300HV IC110 O-268 IC110 100ms 42N300 1-09-12-A IXBT42N300HV transistor 42A