Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFK90N20Q Search Results

    SF Impression Pixel

    IXFK90N20Q Price and Stock

    IXYS Corporation IXFK90N20Q

    MOSFET N-CH 200V 90A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK90N20Q Tube 25
    • 1 -
    • 10 -
    • 100 $10.57
    • 1000 $10.57
    • 10000 $10.57
    		Buy Now
    Mouser Electronics IXFK90N20Q
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Littelfuse Inc IXFK90N20Q

    Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IXFK90N20Q 70 1
    • 1 $16.45
    • 10 $16.45
    • 100 $16.45
    • 1000 $16.45
    • 10000 $16.45
    		Buy Now
    Arrow Electronics IXFK90N20Q 70 1
    • 1 $16.45
    • 10 $16.45
    • 100 $16.45
    • 1000 $16.45
    • 10000 $16.45
    		Buy Now

    IXFK90N20Q Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK90N20Q IXYS 200V HiPerFET power MOSFET Q-class Original PDF
    IXFK90N20QS IXYS HiPerFET Power MOSFET Original PDF

    IXFK90N20Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO264AA

    Abstract: IXFK90N20Q IXFK90N20QS TO-264-aa
    Text: ADVANCED TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFK90N20Q IXFK90N20QS Q Class Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C


    Original     		PDF IXFK90N20Q IXFK90N20QS O-264 O-264AA TO264AA IXFK90N20Q IXFK90N20QS TO-264-aa

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    h bridge ups circuit schematic diagram

    Abstract: IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm IXDP630 IXDP631 schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"
    Text: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


    Original     		PDF EV6R11 IX6R11 IXDP630 IXDP631 IXDD414 IXFK90N20Q 0A/200V h bridge ups circuit schematic diagram IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"

    Untitled

    Abstract: No abstract text available
    Text: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


    Original     		PDF EV6R11 IX6R11 IXDP630 IXDP631 IXDD414 IXFK90N20Q 0A/200V

    74HC00

    Abstract: ixdp630 IXDP630 application note 3 phase ups schematic diagram make three phase ups schematic diagram IXDB4410 74HC00-1 IXBD4411PI 74hc00 oscillator circuit IXDD414
    Text: EVBD4400 HALF BRIDGE DRIVER Evaluation Board Features Introduction • High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than 50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation


    Original     		PDF EVBD4400 IXDP630 IXDP631 74HC00 74HC04 IXDP630 application note 3 phase ups schematic diagram make three phase ups schematic diagram IXDB4410 74HC00-1 IXBD4411PI 74hc00 oscillator circuit IXDD414

    TX02-4400PI

    Abstract: No abstract text available
    Text: EVBD4400 HALF BRIDGE DRIVER Evaluation Board Features Introduction • High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than 50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation


    Original     		PDF EVBD4400 IXDP630 74HC00 74HC04 IXFK90N20Q TX02-4400PI

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    TO-264-aa

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30


    OCR Scan     		PDF IXFK90N20Q IXFK90N20QS O-264 O-264AA TO-264-aa

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HIPerFET IXFK90N20Q IXFK90N20QS Power MOSFETs V DSS ^D25 D DS on Q Class Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS Continuous ±20 V V GSM Transient ±30 V DGR ^D25 Tc = 25°C


    OCR Scan     		PDF IXFK90N20Q IXFK90N20QS O-264AA

    Untitled

    Abstract: No abstract text available
    Text: IPIXYS Advanced Technical Information IXFK 90N20Q IXFX 90N20Q HiPerFET Power MOSFETs Q Class = 200 V = 90 A DSS ^D25 P DS on * rr = 2 2 m ß < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg High dv/dt,Low trr Symbol Test Conditions Maximum Ratings


    OCR Scan     		PDF 90N20Q 90N20Q to150 O-264AA PLUS247TM

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50