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IXYS Corporation IXGH20N50U1 TRANSISTOR,IGBT,N-CHAN+DIODE,500V V(BR)CES,40A I(C),TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IXGH20N50U1		3			1 - 10 - 100 - 1000 - 10000 -	Buy Now

IXGH20N50 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGH20N50		IXYS	Power MOSIGBTs		Scan	PDF
IXGH20N50A		IXYS	Power MOSIGBTs		Scan	PDF

IXGH20N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
20N50A Abstract: 20n50 IXGH20N50 f sss 20n60 sss 20n60 Text: 4686226 ' I X Y S CORP 03 DE I •-§tiñ b SEb □□□□5E4 T~ 3 T — t £ T 1~~ £} IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VOLTS M AXIM UM RATINGS Sym. IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 Unit Drain-Source Voltage 1) Vdss 500 600 Vdc	OCR Scan	PDF	IXGH20N50, IXGM20N50, IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 20N50, 20N50A, 20N50A. 20N50A 20n50 f sss 20n60 sss 20n60
IXGH20N50 Abstract: ixgh20n50u1 rectifier d 355 n 2000 ic 3404A Text: I X Y S CORP 1ÖE D • ODOObTS 4 ■ T - 3 V 13 □IXYS A D V A N C E T E C H N IC A L D A TA S H E E T Data Sheet No. 3404A _ MOS1GBT with Anti-Parallel Rectifier March 1989 PART NUMBER IXGH20N50U1 F E A T U R E S :_	OCR Scan	PDF	IXGH20N50U1 O-247 384928IX IXGH20N50 ixgh20n50u1 rectifier d 355 n 2000 ic 3404A
IXGH20N50 Abstract: IXGH20N50U1 ic 3404A N-150 100V Text: I X Y S CORP 1ÛE ß 4bôb22b OOOOLTS 4 ^ - 1 3 □IXYS ADVANCE TECHNICAL DATA S H E E T Data Sheet No. 3404A March 1989 PART NUMBER MOSIGBT with Anti-Parallel Rectifier IXGH20N50U1 • High Voltage MOSIGBT and Anti-Parallel Rectifier in One Package	OCR Scan	PDF	4bfib22b 384928IXYS IXGH20N50 IXGH20N50U1 ic 3404A N-150 100V
20n50 Abstract: 20N50A IXGH20N50 c 20n50 Text: ' 4686226 I X Y S CORP 03 D E I 4hflbaEti ODDDSSM T • "” T~ 3 T —t £ o IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VO LTS M A X IM U M RA TIN G S Parameter IXGH20N50 IXGM20N50 Sym. Drain-Gate Voltage Rgs 1-OMii) (1) = 600 Vd g r 600 Vdc Vg s	OCR Scan	PDF	IXGH20N50, IXGM20N50, IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 20N50, 20N50A, 20N50A. 20n50 20N50A c 20n50
Untitled Abstract: No abstract text available Text: 4686226 03E I X Y S.CORP I X Y S CORP □3 00159 D D Ë J 4böb22t, D O D D I S T 5 \|~ Power MOSIGBTs Part Number IXGP10N100 CollectorEmitter Voltage Vces Volts 1000 Continuous Pulsed Collector Current Fall Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time	OCR Scan	PDF	IXGP10N100 IXGP10N90 IXGP10N90A IXGP10N80 IXGP10N8 IXGP10N100A IXGH40N60 IXGH40N60A IXGH30N60 IXGH30N60A
IXGH30N50A Abstract: IXGP10N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGP10N50 IXGH20N80 1xgp10n60a IXGH25N90A Text: 4686226 I X I X Y 03E S.CORP Y S CORP □3 00159 O D E I 4böb25t. DOODIST E Power MOSIGBTs Part N um ber CollectorEmitter Voltage Vces Votts Continuous Pulsed Collector Current Power Fall Dis s. Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time	OCR Scan	PDF	IXGP10N100 IXGP10N100A IXGP10N90 IXGP10N90A IXGP10N80 IXGP10N80A IXGP10N60 1XGP10N60A IXGP10N50 IXGP10N50A IXGH30N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGH20N80 IXGH25N90A
IXGH30N50A Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60 Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses	OCR Scan	PDF	4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60