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    IXGP12N60C Search Results

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    IXGP12N60C Price and Stock

    IXYS Corporation IXGP12N60C

    IGBT 600V 24A TO-220-3
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    IXYS Corporation IXGP12N60CD1

    IGBT 600V 24A TO-220-3
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    IXYS Corporation IXGP12N60CDI

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    Bristol Electronics IXGP12N60CDI 18
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    IXGP12N60C Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGP12N60C IXYS 600V HiPerFAST IGBT Original PDF
    IXGP12N60CD1 IXYS 600V HiPerFAST IGBT Original PDF
    IXGP-12N60CD1 IXYS HiPerFAST IGBT Original PDF

    IXGP12N60C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGA12N60C IXGP12N60C VCES IC25 VCE sat typ tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


    Original     		IXGA12N60C IXGP12N60C O-263 O-220 PDF

    IXGP12N60C

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGA12N60C IXGP12N60C VCES IC25 VCE sat typ tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


    Original     		IXGA12N60C IXGP12N60C O-263 O-220 IXGP12N60C PDF

    12n60c

    Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C
    Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		12N60C O-263 O-220 728B1 transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		12N60C O-263 O-220 728B1 PDF

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120 PDF

    IXGA 12N60C

    Abstract: No abstract text available
    Text: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM


    OCR Scan     		12N60C 12N60C O-263 O-220 IXGA 12N60C PDF

    ixgr32n60cd1

    Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
    Text: Discrete IGBTs with FRED Diode U r u G series *C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0* TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1


    OCR Scan     		O-268 ISOPLUS247TM OT-227B T0-220 PLUS247TM O-263 O-247 T0-204 O-264 IXGA12N100U1 ixgr32n60cd1 IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: aixY S Advanced Data Hi Per FAST IGBT IXGA 12N60C IXGP 12N60C V CES ^C25 VCE sat ^fi(typ) Symbol Test Conditions V CES ^ =25°C to150°C VC G R T,J = VGES VGEM C25 Maximum Ratings 600 V (300 V Continuous ±20 V Transient +30 V 24 A 25cC to150°C ;’ FLG t = 1 MQ


    OCR Scan     		12N60C to150 O-220 O-263 PDF

    IXGN40N60

    Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
    Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES


    OCR Scan     		ISOPLUS247TM O-220 PLUS247TM O-263 O-268 O-247 ISOPLUS220 O-264 PLUS264TM IXGA12N100U1* IXGN40N60 IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1 PDF

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan     		O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C PDF