Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTH20N60 Search Results

    SF Impression Pixel

    IXTH20N60 Price and Stock

    IXYS Corporation IXTH20N60

    MOSFET N-CH 600V 20A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH20N60 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Mouser Electronics IXTH20N60
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Component Electronics, Inc IXTH20N60 21
    • 1 $11.54
    • 10 $11.54
    • 100 $8.65
    • 1000 $7.5
    • 10000 $7.5
    Buy Now

    IXTH20N60 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH20N60 IXYS MegaMOSFET Original PDF
    IXTH20N60 IXYS MegaMOS Power MOSFETs Scan PDF
    IXTH20N60 IXYS MegaMOS FET Scan PDF
    IXTH20N60 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTH20N60 Unknown FET Data Book Scan PDF
    IXTH20N60A Unknown FET Data Book Scan PDF

    IXTH20N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTH20N60 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)


    Original
    IXTH20N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SFF20N60M SFF20N60Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 20 AMP / 600 Volts Typ 0.30 Ω N-Channel POWER MOSFET Part Number / Ordering Information 1/


    Original
    SFF20N60M SFF20N60Z SFF20N60 O-254 O-254Z MIL-PRF-19500. SFF20N60M; SFF20N60MDB; PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original
    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original
    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    Untitled

    Abstract: No abstract text available
    Text: SFF20N60M SFF20N60Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 20 AMP / 600 Volts Typ 0.30 N-Channel POWER MOSFET Part Number / Ordering Information 1/


    Original
    SFF20N60M SFF20N60Z SFF20N60 O-254 O-254Z MIL-PRF-19500. SFF20N60M; SFF20N60MDB; PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original
    RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR PDF

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original
    PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original
    BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original
    AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original
    IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 PDF

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:[email protected] Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original
    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30 PDF

    IRFP260 equivalent

    Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent
    Text: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200


    Original
    IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X IFRC254-5X IFRC264-6X IXTD40N30-7X IRFC450-5X IRFP260 equivalent IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD05N100-1T x315 IRFP254 equivalent PDF

    TL 1074 CT

    Abstract: megamos 46 08 09 6 a 1712 mosfet IXTH20N55 25N50 f g megamos
    Text: I X Y S IDE C0RP » 1 4L,âfc,52b 0000344 fl □ IX Y S M e ga M O S’“ FETs IXTH20N60, 55 IXTM20N60, 55 MAXIMUM RATINGS Sym. IXTH20N55 IXTM20N55 IXTH20N60 IXTM20N60 Drain-Source Voltage 1 Vd s s 550 600 Drain-Gate Voltage (R q s = 1-OMfl) (1) Vd g r


    OCR Scan
    IXTH20N55 IXTH20N60 IXTM20N55 IXTM20N60 00D0344 IXTH20N60, IXTM20N60, 50-600V, O-247 TL 1074 CT megamos 46 08 09 6 a 1712 mosfet 25N50 f g megamos PDF

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan
    O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 PDF

    1XTH5N100

    Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
    Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10


    OCR Scan
    IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50 PDF

    IXTH20N60

    Abstract: SFF20N60M SFF20N60Z
    Text: PRELIMINARY y /// !/ / / ¿y/ SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone : 714 670-SSDI (7734) Fax : (714) 522-7424 SFF20N60M SFF20N60Z 20 AMPS 600 VOLTS 0.40 a N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate


    OCR Scan
    670-SSDI SFF20N60M SFF20N60Z IXTH20N60 O-254 O-254Z O-254Z 2x150 F00201 SFF20N60M SFF20N60Z PDF

    IXTH20N60

    Abstract: No abstract text available
    Text: ggjjjW P R E LIM IN A R Y4 SFF20N60B SOLID STATE DEVICES, INC '/ / 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 20 AMPS 600 VOLTS 0.35 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate


    OCR Scan
    670-SSDI IXTH20N60 Sou00 F00209C PDF

    megamos

    Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
    Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4


    OCR Scan
    O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 PDF

    15n60

    Abstract: f sss 20n60 15N60A IXTM15N60 IXTH15N60 20n60 5196 IXTH20n60 to-247 D-68623 IXTH20N60
    Text: v M e g a M O S p DSS 600 V 600 V F E T *D25 DS on 15 A 0.50 Q 20 A 0.35 Q N-Channel Enhancement Mode Symbol TestConditions VDSS Tj = 25 °C to 150°C 600 V v DGR Tj = 25 °C to 150°C; RGS= 1 MQ 600 V V6S VGSM Continuous +20 V Transient ±30 V ^D25 Tc = 25 °C


    OCR Scan
    O-247 15N60 20N60 O-204 O-247 100ms f sss 20n60 15N60A IXTM15N60 IXTH15N60 5196 IXTH20n60 to-247 D-68623 IXTH20N60 PDF

    IXTH20N60

    Abstract: SFF20N60N SFF20N60P LA 1185 top 258,n
    Text: g g p l l PRELIMIWARY % SFF20N60N SFF20N60P SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 20 AMPS 600 VOLTS 0.40 a N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate


    OCR Scan
    670-SSDI SFF20N60N SFF20N60P IXTH20N60 O-258 O-259 2x200 SFF20N60N SFF20N60P LA 1185 top 258,n PDF

    IXTM80N60

    Abstract: diode c248 20n60vd
    Text: IXTH/IXTM 20N60 VDSS = 600 V lD25 = 20 A MegaMOS FET ^ D S o n " ß N-Channel Enhancement Mode Symbol Test Conditions VDSS ^ V„on Tj = 25° C to 1 50° C; RGS= Maximum Ratings =25°Cto 150°C 1 M£2 600 V 600 V v GS Continuous ±20 V v GSM Transient


    OCR Scan
    20N60 15N60 O-247 O-204 O-204 O-247 C2-50 IXTM80N60 diode c248 20n60vd PDF

    ID 48 Megamos

    Abstract: megamos megamos 48 f g megamos IXTZ35N25MB IXTH24N45 0117 megamos IXTP15N25MA ixth24n50ma IXTP22N20MA
    Text: I X Y S CORP IflE D • 4bfib£5b QD00SS7 3 ■ J frrorFE Ts' and LIMOFETsw IXYS Is developing new integrated solutions that simplify the logic-topower interface while adding safe­ guard protection features to the power device. Because of its process compatibility with CMOS, HDMOS


    OCR Scan
    PDF