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    IXTK170N10P Search Results

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    IXTK170N10P Price and Stock

    Littelfuse Inc IXTK170N10P

    MOSFET N-CH 100V 170A TO264
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    DigiKey IXTK170N10P Tube 300
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    Newark IXTK170N10P Bulk 300
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    • 1000 $7.2
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    IXYS Corporation IXTK170N10P

    MOSFETs 170 Amps 100V 0.009 Ohm Rds
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    Mouser Electronics IXTK170N10P
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    Verical IXTK170N10P 320 7
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    Future Electronics IXTK170N10P Tube 24 Weeks 25
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    TTI IXTK170N10P Tube 300
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    TME IXTK170N10P 337 1
    • 1 $12.52
    • 10 $9.97
    • 100 $8.96
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    New Advantage Corporation IXTK170N10P 200 1
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    • 100 $17.52
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    IXTK170N10P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTK170N10P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 170A TO-264 Original PDF

    IXTK170N10P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTQ170N10P

    Abstract: IXTK170N10P IXTT170N10P
    Text: IXTT170N10P IXTQ170N10P IXTK170N10P PolarTM Power MOSFET VDSS ID25 = 100V = 170A ≤ 9mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTT170N10P IXTQ170N10P IXTK170N10P O-268 IXTT170N10P 170N10P 01-07-10-C IXTQ170N10P IXTK170N10P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTT170N10P IXTQ170N10P IXTK170N10P = 100V = 170A ≤ 9mΩ Ω RDS on TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTT170N10P IXTQ170N10P IXTK170N10P O-268 IXTT170N10P 170N10P 01-07-10-C PDF