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    IXYS Corporation IXXX110N65B4H1

    IGBT 650V 240A 880W PLUS247
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    DigiKey IXXX110N65B4H1 Tube 296 1
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    Mouser Electronics IXXX110N65B4H1 208
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    Future Electronics IXXX110N65B4H1 Tube 46 Weeks 300
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    Quest Components IXXX110N65B4H1 3
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    TTI IXXX110N65B4H1 Tube 300
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    TME IXXX110N65B4H1 1
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    Littelfuse Inc IXXX110N65B4H1

    Disc Igbt Xpt-Genx4 To-247Ad/ Tube |Littelfuse IXXX110N65B4H1
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    Newark IXXX110N65B4H1 Bulk 300
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    IXYS Integrated Circuits Division IXXX110N65B4H1

    IGBT DIS.DIODE SINGLE 110A 650V XPT PLUS247
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    Ozdisan Elektronik IXXX110N65B4H1
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    IXXX110N65B4H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXXX110N65B4H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 240A 880W PLUS247 Original PDF

    IXXX110N65B4H1 Datasheets Context Search

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    Abstract: No abstract text available
    Text: IXXK110N65B4H1 IXXX110N65B4H1 XPTTM 650V GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 650V 110A 2.1V 85ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXXK110N65B4H1 IXXX110N65B4H1 IC110 10-30kHz O-264 IF110 110N65B4H1 02-04-13-B

    E8 55A DIODE

    Abstract: No abstract text available
    Text: Advance Technical Information IXXK110N65B4H1 IXXX110N65B4H1 XPTTM 650V GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF 10-30kHz IXXK110N65B4H1 IXXX110N65B4H1 IC110 O-264 IF110 110N65B4H1 E8 55A DIODE