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    K1B2816

    Abstract: No abstract text available
    Text: K1B2816B6M UtRAM Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length


    Original     		PDF K1B2816B6M 8Mx16 K1B2816

    micron vccp

    Abstract: TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816
    Text: TN-45-13: CellularRAM replacing UtRAM Introduction Technical Note Using CellularRAM to Replace UtRAM Introduction The Micron family of CellularRAM™ devices is designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring


    Original     		PDF TN-45-13: 09005aef8201fbdc TN4513 09005aef8201fb90/Source: micron vccp TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816

    SAMSUNG MEMORY 2006

    Abstract: K1B2816B2A 128MB ADIE
    Text: UtRAM 128Mb M-die 100nm & A-die(90nm) Comparison Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The Leader in Memory Technology


    Original     		PDF 128Mb 100nm) K1B2816B2A K1B2816B6M 104Mhz 66Mhz 128Mb SAMSUNG MEMORY 2006 K1B2816B2A ADIE