K4E660811D Search Results

K4E660811D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4E660811D		Samsung Electronics	8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet		Original	PDF

K4E660811D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K4E640811D Abstract: K4E660811D Text: K4E660811D,K4E640811D CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.	Original	PDF	K4E660811D K4E640811D K4E660811D-JC 400mil K4E640811D

Catalog Datasheet

MFG & Type

PDF

Document Tags

K4E640811D

Abstract: K4E660811D
Text: K4E660811D,K4E640811D CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

Original

PDF

K4E660811D K4E640811D K4E660811D-JC 400mil K4E640811D