K4H511
Abstract: K4H510838G-LC K4H511638G
Text: K4H510438G K4H510838G K4H511638G DDR SDRAM 512Mb G-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4H510438G
K4H510838G
K4H511638G
512Mb
K4H511
K4H510838G-LC
K4H511638G
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K4H511638G
Abstract: K4H510438G K4H510838G-LC K4H510838G K4H511638G-LC/LCC
Text: K4H510438G K4H510838G K4H511638G DDR SDRAM 512Mb G-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4H510438G
K4H510838G
K4H511638G
512Mb
sa-10
K4H511638G
K4H510838G-LC
K4H511638G-LC/LCC
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k4h511638g
Abstract: K4H510838G K4H510438G ddr400 DDR333 k4h511638g-hc
Text: K4H510438G K4H510838G K4H511638G DDR SDRAM 512Mb G-die DDR SDRAM Specification 60 FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4H510438G
K4H510838G
K4H511638G
512Mb
k4h511638g
K4H510838G
K4H510438G
ddr400
DDR333
k4h511638g-hc
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M312L5720GH3-CB3
Abstract: M312L2920GH3-CB3
Text: 1GB, 2GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb G-die with 72-bit ECC 60 ball FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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184pin
512Mb
72-bit
256Mx72
M312L5720GH3)
128Mx4
K4H510438G-H*
M312L5720GH3-CB3
M312L2920GH3-CB3
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL383L2921E-CCS REV: 1.0 General Information 1GB 128Mx72 DDR SDRAM ECC REGISTERED DIMM 184-PIN Description The VL383L2921E is a 128Mx72 Double Data Rate SDRAM high density DIMM. This memory module is single rank, consists of eighteen CMOS 128Mx4 bits with 4 banks Synchronous DRAMs in BGA packages, two 14-bit registered
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VL383L2921E-CCS
128Mx72
184-PIN
VL383L2921E
128Mx4
14-bit
184-pin
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k4B2G1646
Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL383L2921E-B3S REV: 1.0 General Information 1GB 128Mx72 DDR SDRAM ECC REGISTERED DIMM 184-PIN Description The VL383L2921E is a 128Mx72 Double Data Rate SDRAM high density DIMM. This memory module is single rank, consists of eighteen CMOS 128Mx4 bits with 4 banks Synchronous DRAMs in BGA packages, two 25-bit registered
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VL383L2921E-B3S
128Mx72
184-PIN
VL383L2921E
128Mx4
25-bit
184-pin
200-pin,
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DDR400
Abstract: PC3200 K4H510438G-HCB3 DIMM Socket, 184-pin
Text: Product Specifications PART NO.: VL383L2921E-CCS REV: 1.0 General Information 1GB 128Mx72 DDR SDRAM ECC REGISTERED DIMM 184-PIN Description The VL383L2921E is a 128Mx72 Double Data Rate SDRAM high density DIMM. This memory module is single rank, consists of eighteen CMOS 128Mx4 bits with 4 banks Synchronous DRAMs in BGA packages, two 14-bit registered
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VL383L2921E-CCS
128Mx72
184-PIN
VL383L2921E
128Mx4
14-bit
184-pin
DDR400
PC3200
K4H510438G-HCB3
DIMM Socket, 184-pin
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DDR333
Abstract: PC2700
Text: Product Specifications PART NO.: VL383L2921E-B3S REV: 1.0 General Information 1GB 128Mx72 DDR SDRAM ECC REGISTERED DIMM 184-PIN Description The VL383L2921E is a 128Mx72 Double Data Rate SDRAM high density DIMM. This memory module is single rank, consists of eighteen CMOS 128Mx4 bits with 4 banks Synchronous DRAMs in BGA packages, two 25-bit registered
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VL383L2921E-B3S
128Mx72
184-PIN
VL383L2921E
128Mx4
25-bit
184-pin
200-pin,
DDR333
PC2700
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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