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Samsung Semiconductor K7N163631B-FC25
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Bristol Electronics	K7N163631B-FC25		5,380			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K7N163631B-FC16T00
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Bristol Electronics	K7N163631B-FC16T00		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K7N163631B-FC25000
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Bristol Electronics	K7N163631B-FC25000		72			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K7N163631BEC25 512KX36 NAD 1MX18-BIT PIPELINED NTRAM ZBT SRAM, 512KX36, 2.6ns, CMOS, PBGA165
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ComSIT USA	K7N163631BEC25		216			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Electronics Co. Ltd K7N163631B-PC16 Electronic Component
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ComSIT USA	K7N163631B-PC16		173			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K7N163631B Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K7N163631B		Samsung Electronics			Original	PDF
K7N163631B-QC16		Samsung Electronics			Original	PDF
K7N163631B-QFCI25		Samsung Electronics			Original	PDF

K7N163631B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K7N163631B Abstract: K7N161831B Text: K7N163631B K7N161831B 512Kx36 & 1Mx18 Pipelined NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	K7N163631B K7N161831B 512Kx36 1Mx18 100TQFP/165FBGA 11x15 K7N163631B K7N161831B
K7N161831B Abstract: K7N163631B A1739 Text: K7N163631B K7N161831B Preliminary 512Kx36 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Mar. 23, 2004 Advance 0.1 1. Update the current spec Icc, ISB May. 13, 2004	Original	PDF	K7N163631B K7N161831B 512Kx36 1Mx18 1Mx18-Bit 120mA 170mA 150mA 130mA K7N161831B K7N163631B A1739
K7N161831B Abstract: K7N163631B Text: K7N163631B K7N161831B 512Kx36 & 1Mx18 Pipelined NtRAMTM 18Mb B-die NtRAMTM Specification 100TQFP & 165FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.	Original	PDF	K7N163631B K7N161831B 512Kx36 1Mx18 100TQFP 165FBGA K7N161831B K7N163631B
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	PDF	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
K7A803609B-PC25 Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15	Original	PDF	K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
K9F2G08U0B Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM	Original	PDF	BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
K5W1G Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION	Original	PDF	BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
um61256 Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620 Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B	Original	PDF	PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 um61256 PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
Untitled Abstract: No abstract text available Text: K7M163635B K7M161835B Preliminary 512Kx36 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36 & 1Mx18-Bit Flow Through NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Mar. 23, 2004 Advance 0.1 1. Update the DC current spec ICC, ISB	Original	PDF	K7M163635B K7M161835B 512Kx36 1Mx18 1Mx18-Bit 120mA 170mA 150mA 130mA
K9F2G08U0C Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM	Original	PDF	BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
K9HDG08U1A Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks	Original	PDF	BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
K7M161835B Abstract: K7M163635B Text: K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb B-die NtRAMTM Specification 100TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	K7M163635B K7M161835B 512Kx36 1Mx18 100TQFP K7M161835B K7M163635B