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    Samsung Semiconductor KM416V1000BJ5

    1M X 16 FAST PAGE DRAM Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42
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    ComSIT USA KM416V1000BJ5 38
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    KM416V1000BJ Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V1000BJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1000BJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1000BJ-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1000BJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1000BJL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1000BJL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF

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    Abstract: No abstract text available
    Text: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1000BJ 1Mx16 40SOJ