panasonic WM-54BT
Abstract: C143 led 10w TC51V18160AFTS-70 SMT18 WM-54BT PANASONIC WM 403A-03 TC51V18160AFTS toshiba SS24 motorola MC33174
Text: UFORCE20 uforCE Demo Board Revised: Tuesday, October 14, 1997 uforCE.SCH Revision: 2.0 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials Oct. 14,1997 Item Quantity Reference
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PDF
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UFORCE20
001uF
CT244
MIC2563A-1
74ACT125
LT1478CS
LTC1327CG
TFDS6000
74ACT00
TR88802CS
panasonic WM-54BT
C143 led 10w
TC51V18160AFTS-70
SMT18
WM-54BT
PANASONIC WM
403A-03
TC51V18160AFTS
toshiba SS24
motorola MC33174
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Untitled
Abstract: No abstract text available
Text: KM416V4000A, KM416V4100A CMOS DRAM 4 M x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5. -6
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KM416V4000A,
KM416V4100A
4Mx16
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Untitled
Abstract: No abstract text available
Text: KM M 372 V 804 A S DRAM M ODULE K M M 3 7 2 V 8 0 4 A S Fast P a g e M o d e 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V G E N E R A L DESCRIPTION F E A TU R ES The Samsung KMM372V804A is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804A
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4Mx16
KMM372V804A
8Mx72bits
4Mx16bits
400mil
168-pin
-KMM372V804AS
4096cycles/64ms
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M332V804AS/AZ-L KMM332V804AS/AZ-L Fast Page Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332V804A
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M332V804AS/AZ-L
KMM332V804AS/AZ-L
4MX16,
KMM332V804A
8Mx32bits
4Mx16bits
72-pin
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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Untitled
Abstract: No abstract text available
Text: KM416V4000AS CMOS D R A M ELECTRONICS 4M X 16Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6
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KM416V4000AS
16Bit
4Mx16
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M332V404AS/AZ-L KMM332V404AS/AZ-L Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V404A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332V404A
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M332V404AS/AZ-L
KMM332V404AS/AZ-L
4MX16,
KMM332V404A
8Mx32bits
4Mx16bits
72-pin
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KM44C16100A
Abstract: km44c16000
Text: MEMORY ICs D e n s ity 64M bit O r* D *IUAA. rVwVr 16Mx4 5V±10% 3.3V+0.3V FUNCTION GUIDE Baokaou. P u rrN o m ta r. KM44C16000A# Fast Page 8K K : 32 Pin SOJ [400mil] KM44C16100A# Fast Page(4K) S : 32 pin TSOP ll(Forward) KM44C16004A# EDO(8K) KM44C16104A#
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KM44C16000A#
KM44C16100A#
KM44C16004A#
KM44C16104A#
400mil]
16Mx4
KM44V16000A#
KM44V16000A
KM44V16100A#
KM44C16100A
km44c16000
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KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
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KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
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km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
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KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
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