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    KM616FS4110 Search Results

    KM616FS4110 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616FS4110ZI-10 Samsung Electronics 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    KM616FS4110ZI-10 Samsung Electronics 100ns, V(cc): -2 to +3V, 1W, 256K x 16-bit super low power and low voltage full CMOS static RAM Scan PDF
    KM616FS4110ZI-7 Samsung Electronics 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    KM616FS4110ZI-7 Samsung Electronics 70ns, V(cc): -2 to +3V, 1W, 256K x 16-bit super low power and low voltage full CMOS static RAM Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616FS4110 Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 8, 1998 Advance 0.1 Revise - DC characteristics change


    Original
    PDF KM616FS4110 256Kx16 48-CSP 25/Typ. 45/Typ. 68/Typ.

    Untitled

    Abstract: No abstract text available
    Text: KM616FS4110 Family CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 8, 1998 Advance 0.1 Revise - DC characteristics change ICC1: 3mA → 4mA


    Original
    PDF KM616FS4110 256Kx16 48-CSP 25/Typ. 45/Typ. 68/Typ.

    Untitled

    Abstract: No abstract text available
    Text: KM616FS4110 Family Preliminary CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 8, 1998 Advance 0.1 Revise - DC characteristics change


    OCR Scan
    PDF KM616FS4110 256Kx16 10/5nA 48-CSP

    KM616FS4110ZI-10

    Abstract: KM616FS4110ZI-7
    Text: Preliminary CMOS SRAM KM616FS4110 Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 8, 1998 Advance 0.1 Revise DC characteristics change Ic c i: 3m A -> 4mA


    OCR Scan
    PDF KM616FS4110 256Kx16 10/5nA 48-CSP KM616FS4110ZI-10 KM616FS4110ZI-7