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    Samsung Semiconductor KM658128LG-10

    PSEUDO STATIC RAM, 128KX8, 100NS, CMOS, PDSO32
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    Quest Components KM658128LG-10 222
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    Samsung Semiconductor KM658128LG-8

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM658128LG-8 46
    • 1 $28
    • 10 $28
    • 100 $23.8
    • 1000 $23.8
    • 10000 $23.8
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    Samsung Semiconductor KM658128LP-10

    Electronic Component
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    ComSIT USA KM658128LP-10 33
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    KM658128 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM658128-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM658128-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM658128-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM658128-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM658128-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM658128-8L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    KM658128 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM658128/L/L-L/LD/LD-L Pseudo SRAM SAMSUNG ELECTRONICS INC 42E D BB 7 ^ 4 1 4 2 12 8K X 8 Bit CMOS Pseudo Static RAM . QQiaflSS T f FEATURES GENERAL DESCRIPTION • Fast Access Time: — 5 1 Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle


    OCR Scan     		PDF KM658128/L/L-L/LD/LD-L 120ns 190ns 200mW KM658128LD/

    KM658128

    Abstract: No abstract text available
    Text: m s« KM658128 SAMSUNG Semiconductor 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM May 1991 FEATURES DESCRIPTION • Fast Access Time: — CE Access Tim e. 80, 100, 120ns Max — Cycle Time Random Read/Write Cycle Time .130, 160, 190ns (Max)


    OCR Scan     		PDF KM658128 120ns 190ns KM658128 576-bit 200mW 5K/1-91

    km658128

    Abstract: 658128 PSEUDO SRAM
    Text: KM658128/L/L-L/LD/LD-L Pseudo SRAM 12 8 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random ReadfWrite Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)


    OCR Scan     		PDF KM658128/L/L-L/LD/LD-L 120ns 190ns 200mW KM658128LD/ 32-Pin 600mil) 525mil) 450mjl) km658128 658128 PSEUDO SRAM

    Untitled

    Abstract: No abstract text available
    Text: KM658128/L7L-ULD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast AcceM Time: — SE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle T im e . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)


    OCR Scan     		PDF KM658128/L7L-ULD/LD-L 120ns 190ns 200mW KM658128LD/ 32-Pin KM658128/L/L-L/LD/LD-L

    KM658128A

    Abstract: No abstract text available
    Text: KM658128A/AL/AL-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)


    OCR Scan     		PDF KM658128A/AL/AL-L 120ns 190ns 200mW 10OjiA KM658128LD/ 32-Pin 600mil) 525mil) 450mil) KM658128A

    KM658128A

    Abstract: No abstract text available
    Text: KM658128A/AL/AL-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)


    OCR Scan     		PDF KM658128A/AL/AL-L 120ns 190ns 200mW KM658128LD/ 32-Pin 600mil) 525mil) 450mil) KM658128A

    658128

    Abstract: KM658128A
    Text: Pseudo SRAM KM658128A/AL/AL- L 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)


    OCR Scan     		PDF KM658128A/AL/AL- 120ns 190ns 200mW 200fjA 100mA KM658128LD/ 32-Pin 600mil) 525mil) 658128 KM658128A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E T> 7 ^ 4 1 4 2 D017532 447 « S U G K KM658128/L/L-L/LD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE A ccess Time . 80,100,120ns Max. — Cycle Tim e . Random R ead/W rite Cycle


    OCR Scan     		PDF D017532 KM658128/L/L-L/LD/LD-L 120ns 190ns KM658128/LVL-L/LD/LD-L

    658128

    Abstract: KM658128-8 km658128-10
    Text: KM658128/L/L-L/LD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — E l Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)


    OCR Scan     		PDF KM658128/L/L-L/LD/LD-L 120ns 190ns 200mW KM658128LD/ 32-Pin 600mil) 525mil) 450mil) 658128 KM658128-8 km658128-10

    658128

    Abstract: No abstract text available
    Text: KM658128/L/L-L/LD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: — CE A ccess Tim e . 80,100,120ns Max. — Cycle Tim e . Random R ead/W rite Cycle Tim e . 130,160,190ns (Max.) • Low Power Dissipation . 200m W typ. (Active)


    OCR Scan     		PDF KM658128/L/L-L/LD/LD-L 120ns 190ns KM658128LD/ 32-Pin S25mN 658128

    658128

    Abstract: KM658128 TC518128 HM658128ALP-12 HM658128ALFP-8 HM658128P-12 tc518128apl HM658128ADP-12 HM658128ALP-8 KM658128-10L
    Text: - 152 IM P s e u d o A X m & ÄSieH ít £ ca TAAC ns TCAC max (ns) V S t a t i c * V 7 R A M (1 31 0 7 2 x 8 ) 3 2 PI N ft TOE max (ns) TOH min (ns) TOD max (ns) TWP (ns) TDS min (ns) 6 5 8 1 2 8 A TDH min (ns) TWD min (ns) TWR max (ns) V D D or V CC


    OCR Scan     		PDF HM658128ADFP HMB58128ADFP-12 HM658128ADFP-8 TC518128AP1/AFI/AFWI-10LV TC5181Z8API/AFI/AFWL-12LV TC518128APL/AFL/AFWL-80LV TC518128APL/ASPL/AFL/AFWI TC518128AP1 /AFWL-12 TC518t2SWl/ASPL/AfL/AFÂ 658128 KM658128 TC518128 HM658128ALP-12 HM658128ALFP-8 HM658128P-12 tc518128apl HM658128ADP-12 HM658128ALP-8 KM658128-10L

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    "30 pin simm"

    Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
    Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36


    OCR Scan     		PDF KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8Mx36 "30 pin simm" 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    KM658128

    Abstract: No abstract text available
    Text: PRINTED IN KOREA Circuit diagrams utilizing SAMSUNG products are included as a means of illustrating typical semiconductor applications; consequently, complete information sufficient for construction purposes is not necessarily given. The information has been carefully checked and is believed


    OCR Scan     		PDF KM658128/L/L-L/LD/LD-L KM658128/LVL-L/LD/LD-lectronics KM658128

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


    OCR Scan     		PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		PDF 010/J/T KM68512 12BKX8 km6865b

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble