Untitled
Abstract: No abstract text available
Text: KMM374S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.
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KMM374S1623BT
PC100
118DIA
000DIA
150Max
81Max)
010Max
KM48S8030BT
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KMM374S1723T-G8
Abstract: KMM374S1723T-GH KMM374S1723T-GL
Text: KMM374S1723T PC100 SDRAM MODULE Revision History Revision .0 Aug. 1998 - Eliminated Preliminary REV. 0 Aug. 1998 KMM374S1723T PC100 SDRAM MODULE KMM374S1723T SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM374S1723T
PC100
KMM374S1723T
16Mx72
16Mx8,
400mil
KMM374S1723T-G8
KMM374S1723T-GH
KMM374S1723T-GL
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KMM374S1623CT-GH
Abstract: No abstract text available
Text: KMM374S1623CT PC100 Unbuffered DIMM Revision History [ Rev. 1 ] March 23. 1999 Functional Block Diagram and Package dimension changed. Rev.1 Mar. 1999 KMM374S1623CT PC100 Unbuffered DIMM KMM374S1623CT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM374S1623CT
PC100
KMM374S1623CT
16Mx72
400mil
168-pin
KMM374S1623CT-GH
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Untitled
Abstract: No abstract text available
Text: Preliminary PC66 SDRAM MODULE KMM374S1623CTL KMM374S1623CTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623CTL is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM374S1623CTL
KMM374S1623CTL
16Mx72
400mil
168-pin
KM48S8030BT
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Untitled
Abstract: No abstract text available
Text: KMM374S1723BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Aug, 1999 • PC133 first published. REV. 0 Aug. 1999 KMM374S1723BTS PC133 Unbuffered DIMM KMM374S1723BTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM374S1723BTS
PC133
KMM374S1723BTS
16Mx72
16Mx8,
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Untitled
Abstract: No abstract text available
Text: KMM374S1623DT PC100 Unbuffered DIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
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KMM374S1623DT
PC100
118DIA
000DIA
150Max
81Max)
KM48S8030DT
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KMM374S1623CT-GL
Abstract: No abstract text available
Text: KMM374S1623CT PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 23, 1999 - Changed "Detail C" in PCB Dimension. Rev.0.1 Mar. 1999 KMM374S1623CT PC100 Unbuffered DIMM KMM374S1623CT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM374S1623CT
PC100
KMM374S1623CT
16Mx72
400mil
168-pin
KMM374S1623CT-GL
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Untitled
Abstract: No abstract text available
Text: KMM374S1723ATS PC100 Unbuffered DIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
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KMM374S1723ATS
PC100
118DIA
000DIA
16Mx8
KM48S16030AT
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KMM374S1623DT-G8
Abstract: KMM374S1623DT-GH KMM374S1623DT-GL
Text: KMM374S1623DT PC100 Unbuffered DIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
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Original
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KMM374S1623DT
PC100
150Max
81Max)
KM48S8030DT
KMM374S1623DT-G8
KMM374S1623DT-GH
KMM374S1623DT-GL
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KMM374S1623BT-G8
Abstract: KMM374S1623BT-GH KMM374S1623BT-GL
Text: KMM374S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.
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KMM374S1623BT
PC100
100MHz
100MHz
KMM374S1623BT-G8
KMM374S1623BT-GH
KMM374S1623BT-GL
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KMM374S1603BTL-G0
Abstract: KM48S8020
Text: KMM374S1603BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM374S1603BTL
200mV.
66MHz
KMM374S1603BTL-G0
KM48S8020
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Untitled
Abstract: No abstract text available
Text: KMM374S1723TS PC100 Unbuffered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May 1999 KMM374S1723TS PC100 Unbuffered DIMM KMM374S1723TS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM374S1723TS
PC100
KMM374S1723TS
16Mx72
16Mx8,
400mil
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Untitled
Abstract: No abstract text available
Text: PC66 SDRAM MODULE KMM374S1623BTL Revision History Revision .3 March 1998 Som e Param eter value s & C haracteristics of com p, level are changed as below : - Input leakage currents (Inputs) : ± 5 u A to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 ,5uA.
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OCR Scan
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KMM374S1623BTL
KM48S8030BT
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Untitled
Abstract: No abstract text available
Text: Preliminary PC100 SDRAM MODULE KMM374S1623BT KMM374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 374S 1623BT is a 16M bit x 72 Synchronous • Perform ance range
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PC100
KMM374S1623BT
KMM374S1623BT
16Mx72
1623BT
374S1623BT-G
125MHz
374S1623BT-GH
100MHz
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374S1623BTL
Abstract: No abstract text available
Text: Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL KMM374S1623BTL SDRAM DIMM
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KMM374S1623BTL_
KMM374S1623BTL
KMM374S1623BTL
16Mx72
374S1623BTL
1623BTL
400mil
168-pin
48S8030BT
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Untitled
Abstract: No abstract text available
Text: KMM374S1603BTL PC66 SDRAM MODULE KMM374S1603BTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1603BTL is a 16M bit x 72 Synchro • Performance range
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OCR Scan
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KMM374S1603BTL
KMM374S1603BTL
16Mx72
400mii
168-pin
118DIAt
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Untitled
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM374S1600AT KMM374S1600AT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx4, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1600AT is a 16M bit x 72 Synchronous - Performance range
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KMM374S1600AT
KMM374S1600AT
16Mx72
16Mx4,
400mil
168-pin
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KMM374S1623BTL
Abstract: KMM374S1623BTL-G0
Text: KMM374S1623BTL PC66 SDRAM MODULE KMM374S1623BTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623BTL is a 16M bit x 72 Synchro nous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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PDF
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KMM374S1623BTL
KMM374S1623BTL
16Mx72
400mil
168-pin
KMM374S1B23BTL
KMM374S1623BTL-G0
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KMM374S1620AT-G0
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM374S1620AT KMM374S1620AT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx4,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1620AT is a 16M bit x 72 Synchronous - Performance range
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OCR Scan
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KMM374S1620AT
KMM374S1620AT
16Mx72
16Mx4
400mil
168-pin
KMM374S1620AT-G0
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Untitled
Abstract: No abstract text available
Text: Preliminary PC100 SDRAM MODULE KMM374S1723T KMM374S1723T SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1723T is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM374S1723T
KMM374S1723T
PC100
16Mx72
16Mx8,
400mii
168-pin
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Untitled
Abstract: No abstract text available
Text: PC100 SDRAM MODULE KMM374S1723TS Revision History [Rev. 0] March 25,1999 Rev.O Mar. 1999 ELECTRONO PC100 SDRAM MODULE KMM374S1723TS KMM374S1723TSS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE
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PC100
KMM374S1723TS
KMM374S1723TSS
16Mx72
16Mx8,
KMM374S1723TS
400mil
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM374S1603BTL Intel 1.0 SDRAM MODULE Revision History Revision ,l November 1997 This spec has changed in accordance with New Binning - ELECTRONICS 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1603BTL KMM374S1603BTL SDRAM DIMM
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OCR Scan
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KMM374S1603BTL
KMM374S1603BTL
16Mx72
374S1603BTL
1603BTL
168-pin
150Max
48S8020BT
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM374S1723T_ PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package Dimensions is revised. REV. 1 July 1998 ELECTRONICS Preliminary PC100 SDRAM MODULE KMM374S1723T KMM374S1723T SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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OCR Scan
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KMM374S1723T_
PC100
KMM374S1723T
KMM374S1723T
16Mx72
16Mx8,
1723T
374S1723T
374S1723T-G
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Untitled
Abstract: No abstract text available
Text: Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL_ Revision History Revision ,l November 1997 This spec has changed in accordance with New Binning - ELECTRONICS 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL KMM374S1623BTL SDRAM DIMM
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OCR Scan
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KMM374S1623BTL_
KMM374S1623BTL
KMM374S1623BTL
16Mx72
374S1623BTL
1623BTL
374S1623BTL-G
125MHz
400mQM
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