Untitled
Abstract: No abstract text available
Text: DRAM MODULE Revision History Version 0.0 June 1998 • The 4th. generation of 16M DRAM components are applied for this module. KMM466F104CT1-L KMM466F124CT1-L KMM466F104CT1-L KMM466F124CT1-L DRAM MODULE KMM466F104CT1-L & KMM466F124CT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh
|
Original
|
PDF
|
KMM466F104CT1-L
KMM466F124CT1-L
KMM466F124CT1-L
1Mx16,
KMM466F10
1Mx64bits
|
Untitled
Abstract: No abstract text available
Text: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The
|
OCR Scan
|
PDF
|
KMM466F104AT-L
KMM466F124AT-L
KMM466F124AT-L
1Mx64
1Mx16,
KMM466F10
1Mx16bit
44-pin
|
Untitled
Abstract: No abstract text available
Text: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KM M 466F10 2 4AT-L is a 1M bit x • Part Identification
|
OCR Scan
|
PDF
|
KMM466F104AT-L
KMM466F124AT-L
KMM466F104AT-L
KMM466F124AT-L
1Mx64
1Mx16,
466F10
x16bit
44-pin
144-pin
|
ADQ37
Abstract: No abstract text available
Text: KMM466F104BT1-L KMM466F124BT1-L DRAM MODULE KM M 466F104BT1-L & KMM466F124BT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F10 2 4BT-L is a 1Mx64bits Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
PDF
|
KMM466F104BT1-L
KMM466F124BT1-L
466F104BT1-L
KMM466F124BT1-L
1Mx16,
KMM466F10
1Mx64bits
1Mx16bits
400mil
ADQ37
|
Untitled
Abstract: No abstract text available
Text: KMM466F104BT1-L KMM466F124BT1-L DRAM M ODULE K M M 4 6 6 F 1 0 4 B T 1 - L & K M M 4 6 6 F 1 24BT1 -L ED O M o d e 1M x 64 DRAM SO DIM M using 1Mx16, 1K/4K Refresh 3.3V, Low pow er/Self-R efresh F E A TU R ES G E N E R A L DESCRIPTION T h e S am su ng K M M 4 6 6 F 1 0 2 4 B T -L is a 1M x64bits D ynam ic
|
OCR Scan
|
PDF
|
KMM466F104BT1-L
KMM466F124BT1-L
24BT1
1Mx16,
x64bits
x16bits
|
Untitled
Abstract: No abstract text available
Text: KMM466F104AT1-L ELECTRONICS DRAM Module KMM466F104AT1 -L & KMM466F124AT1-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM466F10 2 4AT1-L is a 1M bit x
|
OCR Scan
|
PDF
|
KMM466F104AT1-L
KMM466F104AT1
KMM466F124AT1-L
1Mx64
1Mx16,
KMM466F10
1Mx16bit
44-pin
400mil
|
1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
|
OCR Scan
|
PDF
|
KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
|
KMM366F213BK6
Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7
|
OCR Scan
|
PDF
|
2Mx36
4Mx32
8Mx32
KMM374F4l
KMM374F410BK-6
8Mx64
MM366F883AK-5_
KMM366F883AK-6
KMM366F803AK-5
KMM374F
KMM366F213BK6
KMM364E124BJ6
KMM366F213BK-6
KMM374F410BK6
83AK
KMM366F410BK6
KMM374F400BK6
KMM366F400BK6
124BT-L7
KMM364C12
|
1MX16
Abstract: KMM5324104BK KMM5321200B
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG
|
OCR Scan
|
PDF
|
1Mx32
KMM5321200AW/AWG
KMM5321200BW/BWG
KMM5321204AW/AWG
KMM5321204BW/BWG
1Mx36
M15361203A
1Mx16,
1Mx16
16Mx4,
1MX16
KMM5324104BK
KMM5321200B
|
KMM364C12
Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for
|
OCR Scan
|
PDF
|
|